FAN7171-GF085 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

 Automotive qualified to AEC Q100  Floating Channel for Bootstrap Operation to +600 V  4 A Sourcing and 4 A Sinking Current Driving Capability  Common-Mode dv/dt Noise-Cancelling Circuit  3.3 V and 5 V Input Logic Compatible  Output In-phase with Input Signal  Under- Voltage Lockout for VBS  25 V Shunt Regulator on VDD and VBS  8-Lead, Small Outline Package

Applications

 Common Rail Injection Systems  DC-DC Converter  Motor Drive (Electric Power Steering, Fans) Related Product Resources  FAN7171-F085 Product Folder  AN-6076 Design and Application Guide of Bootstrap Circuit for High-Voltage Gate-Drive IC  AN-8102 200 Recommendations to Avoid Short Pulse Width Issues in HVIC Gate Driver  AN-9052 Design Guide for Selection of Bootstrap Components  AN-4171 FAN7085 High-Side Gate Driver- Internal Recharge Path Design Considerations

Description

The FAN7171-F085 is a monolithic high -side gate drive IC that can drive high-speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. ON Semiconductor ’s high -voltage process and common-mode noise -canceling techniques provide stable operation of the high -side driver under high -dv/dt noise circumstances. An advanc ed level -shift circuit offers high -side gate driver operation up to V S=-9.8 V (typical) for VBS=15 V. The UVLO circuit prevents malfunction when V BS is lower than the specified threshold voltage. The high -current and low -output voltage -drop feature make this device suitable for sustain ing switch driver s and energy-recovery switch driver s in automotive motor drive inverter s, switching power suppl ies, and high - power DC-DC converter applications. Figure 1. 8-Lead, SOIC, Narrow Body

Ordering Information

Temperature Range Package Packing Method FAN7171M-F085 -40°C ~ 125°C 8-Lead, Small Outline Integrated Circuit (SOIC), JEDEC MS-012, .150 inch Narrow Body Tube FAN7171MX-F085 Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. 2. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014.

Figure 2. Typical Application

2 NOISE

Pins 3 and 5 are no connection. Figure 3. Block Diagram Figure 4. Pin Assignment (Top Through View)

1 VDD Supply Voltage

2 IN Logic Input for High-Side Gate Driver Output

3 NC No Connection

4 GND Ground

5 NC No Connection

6 VS High-Voltage Floating Supply Return

7 HO High-Side Driver Output

8 VB High-Side Floating Supply

www.onsemi.com FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliabilit y. The absolute maximum ratings are stress ratings only. Symbol Characteristics Min. Max. Unit VS High-Side Floating Offset Voltage VB-VSHUNT VB+0.3 V VB High-Side Floating Supply Voltage(3) -0.3 625.0 V VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V VDD Low-Side and Logic Supply Voltage(3) -0.3 VSHUNT V VIN Logic Input Voltage -0.3 VDD+0.3 V dVS/dt Allowable Offset Voltage Slew Rate ±50 V/ns PD Power Dissipation(4,5,6) 0.625 W JA Thermal Resistance 200 °C/W TJ Junction Temperature -55 150 °C TSTG Storage Temperature -55 150 °C TA Operating Ambient Temperature -40 125 °C ESD Human Body Model (HBM) 1500 V Charge Device Model (CDM) 500 Notes: 3. This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25 V. Please note that this supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the Electrical Characteristics section. 5. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. 6. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VBS High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage (DC) 6-VDD 600 V High-Side Floating Supply Offset Voltage (Transient) -15 (~170) -7 (~400) VHO High-Side Output Voltage VS VB V VIN Logic Input Voltage GND VDD V VDD Supply Voltage 10 20 V TPULSE Minimum Input Pulse Width (7) 80 - ns Note: 7. Input pulses shorter than the minimum recommendation can cause abnormal output. Short input pulses can be turn on pulses (i.e., rising edge to the adjacent falling edge), turn off pulses (i.e., falling edge to the adjacent rising edge) but also parasitic pulses induced by noise. Refer to Figure 25 and Figure 26. Value guaranteed by design.

www.onsemi.com FAN7171-F085 — 600V / 4A, High-Side Automotive Gate Driver IC

Electrical Characteristics

VBIAS (VDD, VBS)=15 V, -40°C ≤ TA ≤ 125°C, unless otherwise specified. The V IN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Parameter Conditions Min. Typ. Max. Unit Power Supply Section IQDD Quiescent VDD Supply Current VIN=0 V or 5 V 25 70 A IPDD Operating VDD Supply Current fIN=20 kHz, No Load 35 100 A Bootstrapped Supply Section VBSUV+ VBS Supply Under-Voltage Positive-Going Threshold Voltage VBS=Sweep 8.2 9.2 10.2 V VBSUV- VBS Supply Under-Voltage Negative-Going Threshold Voltage VBS=Sweep 7.5 8.5 9.5 V VBSHYS VBS Supply UVLO Hysteresis Voltage VBS=Sweep 0.6 V ILK Offset Supply Leakage Current VB=VS=600 V 50 A IQBS Quiescent VBS Supply Current VIN=0 V or 5 V 60 120 A IPBS Operating VBS Supply Current CLOAD=1 nF, fIN=20 kHz, RMS Value 0.73 2.80 mA Shunt Regulator Section VSHUNT VDD and VBS Shunt Regulator Clamping Voltage ISHUNT=5 mA 23 25 V Input Logic Section (IN) VIH Logic “1” Input Voltage 2.5 V VIL Logic “0” Input Voltage 0.8 V IIN+ Logic Input High Bias Current VIN=5 V 45 125 A IIN- Logic Input Low Bias Current VIN=0 V 2 A RIN Input Pull-down Resistance 40 110 k Gate Driver Output Section (HO) VOH High Level Output Voltage (VBIAS - VO) No Load 1.5 V VOL Low Level Output Voltage No Load 35 mV IO+ Output High, Short-Circuit Pulsed Current(8) VHO=0 V, VIN=5 V, PW ≤10 µs 3.0 4.0 A IO- Output Low, Short-Circuit Pulsed Current(8) VHO=15 V,VIN=0 V, PW ≤10 µs 3.0 4.0 A VS Allowable Negative VS Pin Voltage for IN Signal Propagation to HO -9.8 -7.0 V Note: 8. These parameters guaranteed by design. Dynamic Electrical Characteristics VBIAS (VDD, VBS) =15 V, VS=GND=0 V, CL=1000 pF, and-40°C ≤ TA ≤ 125°C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit tON Turn-On Propagation Delay VS=0 V 150 210 ns tOFF Turn-Off Propagation Delay VS=0 V 150 210 ns tR Turn-On Rise Time 25 50 ns tF Turn-Off Fall Time 15 45 ns

Figure 27. 8-Lead, Small Outline Integrated Circuit (SOIC), JEDEC MS-012, .150 inch Narrow Body B) ALL DIMENSIONS ARE IN MILLIMETERS.

1.75 MAX

0.25 C B A

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