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Technical content
Features
Automotive Qualified to AEC Q100 Floating Channel for Bootstrap Operation to +600 V Tolerance to Negative Transient Voltage on VS Pin VS-pin dv/dt Immune Gate Drive Supply Range from 5.5 V to 20 V Under-Voltage Lockout (UV LO) CMOS Sc hmitt-triggered Inputs w ith Pull-dow n High Side Output In-phase w ith Input IN input is 3.3 V/5 V Logic Compatible and Available on 15 V Input Matched Propagation Delay for both Channels Dead Time Adjustable
Applications
Junction Box Half and full bridge application in the motor drive system Related Product Resources
Description
The FAN7080-GF085 is a half -bridge gate drive IC w ith reset input and adjustable dead time control. It is designed for high voltage and high speed driving of MOSFET or IGBT, w hich operates up to 600 V. ON Semiconductor's high- voltage process and com mon- mode noise cancellation technique provide stable operation in the high side driver under high- dV/dt noise circumstances. An advanced level -shift circuit allow s high-side gate driver operation up to V S=-5 V (typical) at VBS=15 V. Logic input is compatible w ith standard CMOS outputs. The UVLO cir cuits for both channels prevent from malfunction w hen V CC and V BS are low er than the specified threshold voltage. Combined pin function for dead time adjustment and reset shutdow n make this IC packaged w ith space saving SOIC -8 Package. Minimum source and sink current capability of output driver is 250 mA and 500 mA respectively, w hich is suitable for junction box application and half and full bridge application in the motor drive sys tem. Figure 1. 8-Lead, SOIC, Narrow Body
Ordering Information
Temperature Range Package Packing Method FAN7080M-GF085 -40°C ~ 125°C 8-Lead, Small Outline Integrated Circuit ( SOIC), JEDEC MS-012, .150 inch Narrow Body Tube FAN7080MX- GF085 Tape & Reel
Figure 4. Pin Assignment (Top Through View)
1 VCC P Driver Supply Voltage
2 IN I Logic input for high and low side gate drive output
4 COM P Ground
5 LO A Low side gate drive output for MOSFET Gate connection
6 VS A High side floating offset for MOSFET Source connection
7 HO A High side drive output for MOSFET Gate connection
8 VB P Driver Output Stage Supply
www.onsemi.com FAN7080-GF085 — Half Bridge Gate Driver Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VS High-Side Floating Offset Voltage VB-25 VB+0.3 V VB High-Side Floating Supply Voltage -0.3 625 V VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V VLO Low -Side Floating Output Voltage -0.3 Vcc+0.3 V VCC Supply Voltage -0.3 25 V VIN Input Voltage f or IN -0.3 VCC+0.3 V IIN Input Injection Current (1) +1 mA PD Pow er Dissipation (2.3) 0.625 W θJA Thermal Resistance, Junction to Ambient (2) 200 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 150 °C ESD Human Body Model ( HBM) 1000 V Charge Device Model (CDM) 500 N otes: 1. Guaranteed by design. Full function, no latchup. Tested at 10 V and 17 V. 2. The Thermal Resistance and pow er dissipation rating are measured per below conditions: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection/Still Air JESD51-3: Low effec tive thermal conductivity test board for leaded surface- mount packages. 3. Do not exceed pow er dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit VB (4) High-Side Floating Supply Voltage (DC) Transient: -10 V at 0.1 µS VS+6 VS+20 V VS High-Side Floating Supply Offset Voltage (DC) Transient: -25 V ( max.) at 0.1 µS at VBS < 25 V -5 600 V VHO High-Side Output Voltage VS VB V VLO Low -Side Output Voltage 0 VCC V VCC Supply Voltage for Logic Input 5.5 20 V VIN Logic Input Voltage 0 VCC V dv/dt Allow able Offset Voltage Slew Rate (5) 50 V/nS TPULSE Minimum Pulse Width (5,6) 1100 nS FS Sw itching Frequency (6) 200 KHz TA Operating Ambient Temperature -40 125 °C N otes: 4. The V S offset is tested w ith all supplies based at 15 V differential 5. Guaranteed by design. 6. When V DT = 1.2 V. Refer to Figures 5, 6, 7 and 8.
www.onsemi.com FAN7080-GF085 — Half Bridge Gate Driver
Electrical Characteristics
Unless otherw ise specified -40°C ≤ TA ≤ 125°C, VCC = 15 V, VBS=15 V, VS = 0 V, CL =1 nF Symbol Parameter Conditions Min. Typ. Max. Unit VCC and VBS Supply Characteristics VCCUV+ VBSUV+ VCC and VBS Supply Under-Voltage Positive going Threshold 4.2 5.5 V VCCUV- VBSUV- VCC and VBS Supply Under-Voltage Negative going Threshold 2.8 3.6 V VCCUVH VBSUVH VCC and VBS Supply Under-Voltage Hysteresis 0.2 0.6 V tDUVCC tDUVBS Under-Voltage Lockout Response Time VCC: 6 V2.5 V or 2.5 V6 V 0.5 20 µs VBS: 6 V2.5 V or 2.5 V6 V 0.5 20 ILK O ffset Supply Leakage Current VB = VS = 600 V 20 50 µA IQBS Quiescent V BS Supply Current VIN = 0 or 5 V, VSDT = 1.2 V 20 75 150 µA IQCC Quiescent V CC Supply Current VIN = 0 or 5 V, VSDT = 1.2 V 350 1000 µA Input Characteristics VIH High Logic level Input Voltage 2.7 V VIL Low Logic Level Input Voltage 0.8 V IIN+ Logic Input High Bias Current VIN = 5 V 10 50 µA IIN- Logic Input Low Bias Current VIN = 0 V 0 2 µA VDT VDT Dead Time Setting Range 1.2 5.0 V VSD VSD Shutdow n Threshold Voltage 0.8 1.2 V RSDT High Logic Level Resistance for /SD / DT VSDT = 5 V 100 500 1100 kΩ ISDT- Low Logic Level Input bias Current for /SD /DT VSDT = 0 V 1 2 µA Output Characteristics VOH(HO) High Level Output Voltage (V CC - VHO) IO = 0 0.1 V VOL(HO) Low Level Output Voltage (VHO) IO = 0 0.1 V IO+(HO) Output High, Short -Circuit Pulse Current 250 300 mA IO-(HO) Output Low , Short-Circuit Pulse Current 500 600 mA ROP(HO) Equivalent Output Resistance Ω RON(HO) 30 VOH(LO) High Level Output Voltage (V B – VLO) IO = 0 0.1 V VOL(LO) Low Level Output Voltage (VLO) IO = 0 0.1 V IO+(LO) Output High, Short-Circuit Pulse Current 250 mA IO-(LO) Output Low , Short-Circuit Pulse Current 500 mA ROP(LO) Equivalent Output Resistance Ω RON(LO) 30
www.onsemi.com FAN7080-GF085 — Half Bridge Gate Driver Physical Dimensions 8-Lead, Small Outline Integrated Circuit ( SOIC), JEDEC M S-012, .150 inch Narrow Body SEE DETAIL A NOTES: A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M E) DRAWING FILENAME: M08Arev16 LAND PATTERN RECOMMENDATION SEATING PLANE C GAGE PLANE x 45° DETAIL A SCALE: 2:1 PIN ONE INDICATOR B A 5.60 0.65 1.75 1.27 6.00±0.20 3.90±0.10 4.90±0.10 1.27 0.42±0.09 0.175±0.075
1.75 MAX
0.36 (0.86) R0.10 R0.10 0.65±0.25 (1.04) OPTION A - BEVEL EDGE OPTION B - NO BEVEL EDGE
0.25 C B A
0.10 0.22±0.03 (0.635)
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