FAM65CR51ADZ1 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Integrated SIP or DIP Boost Converter Stage Power Module for On−board Charger (OBC) in EV or PHEV
  • 5 kV/1 sec Electrically Isolated Substrate for Easy Assembly
  • Creepage and Clearance per IEC60664−1, IEC 60950−1
  • Compact Design for Low Total Module Resistance
  • Module Serialization for Full Traceability
  • Lead Free, RoHS and UL94V−0 Compliant
  • Automotive Qualified per AEC Q101 and AQG324 Guidelines
  • Improved Performance with SiC Diodes

Applications

  • PFC Stage of an On−board Charger in PHEV or EV Benefits
  • Enable Design of Small, Efficient and Reliable System for Reduced Vehicle Fuel Consumption and CO2 Emission
  • Simplified Assembly, Optimized Layout, High Level of Integration, and Improved Thermal Performance www.onsemi.com See detailed ordering, marking and shipping information on page 2 of this data sheet.

ORDERING INFORMATION

APMCD−B16

12 LEAD

XXXX = Specific Device Code ZZZ = Lot ID AT = Assembly & Test Location Y = Year W = Work Week NNN = Serial Number MARKING DIAGRAM XXXXXXXXXXX ZZZ ATYWW NNNNNNN APMCD−A16

FAM65CR51ADZ1, FAM65CR51ADZ2 www.onsemi.com Part Number Package Lead Forming DBC Material Pb−Free and RoHS Compliant Operating Temperature (TA) Packing Method FAM65CR51ADZ1 APM16−CDA Y−Shape Al2O3 Yes −40°C ~ 125°C Tube FAM65CR51ADZ2 APM16−CDB L−Shape Al2O3 Yes −40°C ~ 125°C Tube Pin Configuration and Description Figure 1. Pin Configuration Table 1. PIN DESCRIPTION

3 NC Not Connected

4 NC Not Connected

9 Q1 Gate Gate Terminal of Q1

10 Q2 Gate Gate Terminal of Q2

13 NC Not Connected

14 NC Not Connected

Figure 2. Internal Block Diagram Table 2. ABSOLUTE MAXIMUM RATINGS OF MOSFET (TJ = 25°C, Unless Otherwise Specified) should not be assumed, damage may occur and reliability may be affected.

  1. Maximum continuous current and power, without switching losses, to reach T

0.63 mm Al2O3 alumina with 0.3 mm copper on both sides. DBC substrate is NOT nickel plated. flammability rating class 94V−0. Solder used is a lead free SnAgCu alloy. re−melting of the solder joints.

Table 3. ELECTRICAL SPECIFICATIONS OF MOSFET (TJ = 25°C, Unless Otherwise Specified) performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Defined by design, not subject to production test

Table 4. ABSOLUTE MAXIMUM RATINGS OF THE BOOST DIODE (TJ = 25°C, Unless Otherwise Specified)

  1. V RRM and IF value referenced to TO220−2L Auto Qualified Package Device FFSP3065B_F085

Table 5. ELECTRICAL SPECIFICATIONS OF THE BOOST DIODE (TJ = 25°C, Unless Otherwise Specified) Table 6. THERMAL RESISTANCE

  1. Test method compliant with MIL STD 883−1012.1, from case temperature under the chip to case temperature measured below the package
  2. Defined by thermal simulation assuming the module is mounted on a 5 mm Al −360 die casting material with 30 um of 1.8 W/mK thermal

Table 7. ISOLATION (Isolation resistance at tested voltage between the base plate and to control pins or power terminals.)

FAM65CR51ADZ1, FAM65CR51ADZ2 www.onsemi.com PARAMETER DEFINITIONS Reference to Table 3: Parameter of MOSFET Electrical Specifications BVDSS Q1, Q2 MOSFET Drain−to−Source Breakdown Voltage The maximum drain−to−source voltage the MOSFET can endure without the avalanche breakdown of the body− drain P−N junction in off state. The measurement conditions are to be found in Table 3. The typ. Temperature behavior is described in Figure 13 VGS(th) Q1, Q2 MOSFET Gate to Source Threshold Voltage The gate−to−source voltage measurement is triggered by a threshold ID current given in conditions at Table 4. The typ. Temperature behavior can be found in Figure 10 RDS(ON) Q1, Q2 MOSFET On Resistance RDS(on) is the total resistance between the source and the drain during the on state. The measurement conditions are to be found in Table 3. The typ behavior can be found in Figure 11 and Figure 12 as well as Figure 17 gFS Q1, Q2 MOSFET Forward Transconductance Transconductance is the gain in the MOSFET, expressed in the Equation below. It describes the change in drain current by the change in the gate−source bias voltage: gfs = [/C0068IDS / /C0068VGS]VDS IGSS Q1, Q2 MOSFET Gate−to−Source Leakage Current The current flowing from Gate to Source at the maximum allowed VGS The measurement conditions are described in the Table 3. IDSS Q1, Q2 MOSFET Drain−to−Source Leakage Current Drain – Source current is measured in off state while providing the maximum allowed drain−to-source voltage and the gate is shorted to the source. IDSS has a positive temperature coefficient.

Figure 3. Timing Measurement Variable Definition Table 8. PARAMETER OF SWITCHING CHARACTERISTICS Turn−On Delay (td(on)) This is the time needed to charge the input capacitance, Ciss, before the load current ID starts flowing. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Rise Time (tr) The rise time is the time to discharge output capacitance, Coss. After that time the MOSFET conducts the given load current ID. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Turn−Off Delay (td(off)) td(off) is the time to discharge Ciss after the MOSFET is turned off. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above. Fall Time (tf) The fall time, tf, is the time to charge the output capacitance, Coss. During this time the load current drops down and the voltage VDS rises accordingly. The measurement conditions are described in the Table 3. For signal definition please check Figure 3 above.

Figure 4. Normalized Power Dissipation vs. Figure 5. Maximum Continuous ID vs. Case Figure 6. Transfer Characteristics Figure 7. Forward Diode Figure 8. On Region Characteristics (25/C0053C) Figure 9. On Region Characteristics (150 /C0053C)

10 VVGS = 15 V

APMCD−A16 / 12LD, AUTOMOTIVE MODULE CASE MODGG ISSUE B DATE 03 NOV 2020 XXXX = Specific Device Code ZZZ = Lot ID AT = Assembly & Test Location Y = Year WW = Work Week NNN = Serial Number *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXX ZZZ ATYWW NNNNNNN MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON94738GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1APMCD−A16 / 12LD, AUTOMOTIVE MODULE © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

APMCD−B16 / 12LD, AUTOMOTIVE MODULE CASE MODGK ISSUE C DATE 03 NOV 2020 XXXX = Specific Device Code ZZZ = Lot ID AT = Assembly & Test Location Y = Year W = Work Week NNN = Serial Number *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “/C0071”, may or may not be present. Some products may not follow the Generic Marking. GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXX ZZZ ATYWW NNNNNNN MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98AON97134GDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1APMCD−B16 / 12LD, AUTOMOTIVE MODULE © Semiconductor Components Industries, LLC, 2018 www.onsemi.com

www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative