FAM04V18DT1 ONSEMI | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
Features
- Full Bridge Inverter for Variable Speed Motor Drive
- Temperature Sensing
- R−C Snubber Circuits for each MOSFET
- Electrically Isolated DBC Substrate for Low Rthjc
- Compact Design for Low Total Module Resistance
- Module Serialization for Full Traceability
- Lead Free, RoHS and UL94 V−0 Compliant
- Automotive Qualified
- This Device is Pb−Free and is RoHS Compliant
Applications
- 12 V Motor Control
- Brake System, Electrical Streering, Turbo Charger Benefits
- Enable Design of Small, Efficient and Reliable System for Reduced Vehicle Fuel Consumption and CO2 Emission
- High Current Application
- Low Thermal Resistance
- Simplified Vehicle Assembly
- High EMI Performance
Figure 1. Pin Configuration
ORDERING INFORMATION
Table 1. ORDERING INFORMATION Table 2. PIN DESCRIPTION
1 NTC+ NTC Thermistor Terminal 1
2 NTC− NTC Thermistor Terminal 2
3 U_DN Gate of Q4
4 U_UP Gate of Q1
5 U_SENSE Sense Pin for Source of Q1 and Drain of Q4
6 V_DN Gate of Q5
7 V_UP Gate of Q2
8 NC Not used
9 V_SENSE Sense Pin for Source of Q2 and Drain of Q5
10 W_DN Gate for Q6
11 W_UP Gate for Q3
12 NC Not used
13 W_SENSE Sense Pin for Source of Q3 and Drain of Q6
14 V_LINK Sense Pin for Battery Voltage and Drain of High Side MOSFETs
15 B−_SENSE B− Sense
16 B− Battery−
17 B+ Battery+
18 W Phase W Phase Power lead
19 V Phase V Phase Power lead
20 U Phase U Phase Power lead
Figure 2. Schematic
flammability rating class 94 V−0. Solder used is a lead free SnAgCu alloy. Table 3. ABSOLUTE MAXIMUN RATINGS (TJ = 25°C, Unless Otherwise Specified) should not be assumed, damage may occur and reliability may be affected. Table 4. ELECTRICAL SPECIFICATIONS (TJ = 25°C, Unless Otherwise Specified) performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Starting T J = 25°C, L = 0.47 mH, IAS = 79 A, VDD = 40 V during inductor charging and VDD = 0 V during time in avalanche.
- All MOSFETs (bare die) have same die size and Rdson level, The different Rdson values listed in the datasheet are due to the different access
points available inside the module for Rdson measurement.
Table 5. TEMPERATURE SENSE (NTC THERMISTOR) Table 6. MOSFETS RDSON MEASUREMENT PATHS
Table 7. MODULE RDSON MEASUREMENT PATHS Table 8. THERMAL RESISTANCE Table 9. ISOLATION VOLTAGE (Isolation Voltage between DBC Bottom Surface and All Module Pins)
Table 10. REFERENCE TYPICAL CHARACTERISTICS FOR DISCRETE MOSFET FDBL9401_F085,
- The maximum value is specified by design at T J = 175°C. Product is not tested to this condition in production.
Table 11. COMPONENTS
1 MOSFET PT8 40 V PT8 40 V, bare die used
2 R1, 2, 3, 4,
3 C1, 2, 3, 4,
4 C7 Capacitor 1206 100 nF 100 V 10% 1ea 2010 x 1250
5 NTC Thermistor NCP18XH103F0SRB −
www.onsemi.com Mechanical Characteristics and Ratings Figure 5.
www.onsemi.com PACKAGE DIMENSIONS APM20CBB / 20LD, PDD STD, R−EPS MODULE CASE MODFZ ISSUE A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative