FA8050 FCI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
VEBO 6.0 V IC 1.5 A IB 500 mA Total Device Dissipation TA = 25oC Junction and Storage Temperature
Description
Data Sheet NPN Epitaxial Planar Transistor FA8050 Ratings Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) Base Current Symbol Value Units P D 1.0 W TJ, TSTG -55 to 150 oC Mechanical Dimensions Electrical Characteristics @ 25oC Characteristic Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 2.0mA) Collector - Base Breakdown Voltage (IC = 100µA) Emitter - Base Breakdown Voltage (IE = 100µA) Collector Cutoff Current (VCB = 35V) Emitter Cutoff Current (VEB = 6.0V) DC Current Gain (IC = 5.0 mA, VCE = 1.0 V) (IC = 100 mA, VCE = 1.0 V) (IC = 800 mA, VCE = 1.0 V) Collector - Emitter Saturation Voltage (IC = 0.8 A, IB = 80 mA) Base - Emitter Saturation Voltage (IC = 0.8 A, IB = 80 mA) Base - Emitter On Voltage (VCE = 1.0 V, IC = 10 mA) Current - Gain - Bandwidth Product (IC = 50 mA, VCE = 10 V) VBR(CEO) 25 --- V VBR(CBO) 40 --- V VBR(EBO) 6.0 --- V ICBO --- 0.1 µA IEBO --- 0.1 µA HFE --- 45 --- 85 500 40 --- V CE(sat) V --- 0.5 VBE(sat) V --- 1.2 VBE(ON) V --- 1.0 fT 100 --- MHz TO-92 Classification of hFE2 Rank B C D E Range 85-160 120-200 160-300 250-500
Epitaxial Planar Transistor