FA38SA50LC IRF | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 A IDM Pulsed Drain Current 150 PD @T C = 25°C Power Dissipation 500 W Linear Derating Factor 4.0 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 580 mJ IAR Avalanche Current 38 A EAR Repetitive Avalanche Energy 50 mJ dv/dt Peak Diode Recovery dv/dt 16 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range VISO Insulation Withstand Voltage (AC-RMS) 2.5 kV Mounting torque, M4 srew (1.3N•M) FA38SA50LC HEXFET ® Power MOSFET S D G VDSS = 500V R DS(on) = 0.13Ω ID = 38A Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. 2/2/99
Description
l Easy to Use and Parallel l Low On-Resistance l Dynamic dv/dt Rating l Fully Avalanche Rated l Simple Drive Requirements l Low Drain to Case Capacitance l Low Internal Inductance SOT-227 Absolute Maximum Ratings Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.25 R θCS Case-to-Sink, Flat, Greased Surface 0.05 ––– °C/W Thermal Resistance www.irf.com 1 PD - 91615B
2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 38A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 0.80mH RG = 25Ω , IAS = 38A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 38A, VGS = 0V trr Reverse Recovery Time ––– 830 1300 ns T J = 25°C, IF = 38A Q rr Reverse RecoveryCharge ––– 15 22 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 150 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V V GS = 0V, ID = 1.0mA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0.13 Ω VGS = 10V, ID = 23A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS , ID = 250µA gfs Forward Transconductance 22 ––– ––– S V DS = 25V, ID = 23A ––– ––– 50 µA VDS = 500V, VGS = 0V Gate-to-Source Forward Leakage ––– ––– 200 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Q g Total Gate Charge ––– 280 420 I D = 38A Q gs Gate-to-Source Charge ––– 37 55 nC V DS = 400V Q gd Gate-to-Drain ("Miller") Charge ––– 150 220 V GS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 42 ––– V DD = 250V tr Rise Time ––– 340 ––– I D = 38A td(off) Turn-Off Delay Time ––– 200 ––– R G = 10Ω (Internal) tf Fall Time ––– 330 ––– R D = 8Ω, See Fig. 10 Ls Internal Source Inductance ––– 5.0 ––– nH Between lead, and center of die contact C iss Input Capacitance ––– 6900 ––– V GS = 0V C oss Output Capacitance ––– 1600 ––– pF V DS = 25V C rss Reverse Transfer Capacitance ––– 580 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current
www.irf.com 3 Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1000 1 10 100 V , Drain-to-Source Voltage (V ) 20µ s PULSE WI DTH T = 25°CC A 4.5V VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V DS 100 1000 4 5 6 7 8 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 38A ID , Drain-to-Source Current (A) 100 1000 1 10 100 20µs PULSE WIDTH T = 150CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V
4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 80 160 240 320 400 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 38A V = 100VDS V = 250VDS V = 400VDS 100 1000 1 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C° C V , Drain-to-Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 1 10 100 2000 4000 6000 8000 10000 12000 14000 16000 V , Drain-to-Source Voltage (V) C, Capacitance (pF) DS V C C C 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd C iss C oss C rss
www.irf.com 5 Q G Q GS Q GD VG Charge VDS 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS VDD R G D.U.T. D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms Fig 10a. Switching Time Test CircuitFig 9a. Basic Gate Charge Waveform Fig 9b. Gate Charge Test Circuit Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10V 0.001 0.01 0.1 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 0.50 SINGLE PULSE (THERMAL RESPONSE)
6 www.irf.com Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0.01 Ωtp D.U.T LV DS - V DD DRI VER A 15V 20V 25 50 75 100 125 150 200 400 600 800 1000 1200 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 17A 24A 38A
www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit R G VDD
- dv/dt controlled by RG
- Driver same type as D.U.T.
- ISD controlled by Duty Factor "D"
- D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer Fig 13. For N-Channel HEXFETS
8 www.irf.com Tube 4.40 (.173 ) 4.20 (.165 ) 12.50 ( .492 ) 7.50 ( .295 ) 2.10 ( .082 ) 1.90 ( .075 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 8.10 ( .319 ) 7.70 ( .303 )4X 15.00 ( .590 ) R FULL 2.10 ( .082 ) 1.90 ( .075 ) 0.12 ( .005 ) -C- 0.25 ( .010 ) M C A M B M 25.70 ( 1.012 ) 25.20 ( .992 ) -B- 6.25 ( .246 ) C HAM FER 2.00 ( .079 ) X 457 -A- 38.30 ( 1.508 ) 37.80 ( 1.488 ) 12.30 ( .484 ) 11.80 ( .464 ) LEAD ASSIGMENTS IGBT E C GE S D GS HEXFET A1 K2 K1 A2 HEXFRED QUANTITY PER TUBE IS 10 M4 SREW AND WASHER I NCLUDED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99