FA1L4Z NEC | Alldatasheet

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MEDIUM SPEED SWITCHING | | RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD Eee - FEATI | PACKAGE DIMENSIONS URES in millimeters @ Resistor Built-in TYPE c B 6 2840.2 Ry =47kQ bay 15 0.65845 Ry $ E : — © Complementary to FN1L4Z r ) FH.

9 Ald ABSOLUTE MAXIMUM RATINGS

7] a | | > . PS Maximum Voltages and Currents (T. = 25 °C) “| 3 : 2 Collector to Base Voltage Veso 60 Vv tH = Collector to Emitter Voltage Vceo 50 v Mark Emitter to Base Voltage Veso 5 Vv 2 = Collector Current (DC) Io 100 mA © 8 Collector Current (Pulse) Ic 200 mA : g Maximum Power Dissipation = 3 Total Power Dissipation ia = at 25 °C Ambient Temperature Pr 200 mw | S Maximum Temperatures 2 bee g Junction Temperature Ty 150 °c 3. Collector Storage Temperature Range Tstg —55to+150 °C ELECTRICAL CHARACTERISTICS (T, = 25 °C) [DccurentGain | ers | a8 | m0 | eo |_| vee=sov.ic=sma—_—| [aso | || ee 80 v.I¢= soma [ri-tetipue venue Vint [AO | v [mpurrismor Sd as | mo | ep eS * Pulsed: PW S350 us, Duty Cycle 2 % hee Classification [Nonking [tar ue] a] QD beer [25 10270 | 200 0200 | 300 600 | NEC cannot assume any responsibility for any circults shown or represent that they are free from patent infringement. © NEC Corporation 1987

TYPICAL CHARACTERISTICS (T, = 25 °C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs.

250 AMBIENT TEMPERATURE 50 Vu TOEMITTER VOLTAGE

[TT Tt ty [* | 4

2 EEE EET fe

E 200 Coen 40 fL tT, | s [NTT a) Zena pet AYE 7) 2=seeneee B {TIN TTT TTT nn) oS Ft +t ALT Te tT | - CLT IN ETT g + ow 3 \\ 3 oe ee = ECCT TT or ASRS a 10 —— Ne ——— COPPEN TT eo 080108180200 250 ELT) TTT yy Ta—Ambient Temperature—"C 0 20 , 4.0 6.0 Vol so, 0 VcE—Collector to Emitter Voltage— r ) : COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT i “CTT 1 poof LE PTT TT | Il TTT Ter yt roof} tt z ; =e ea > ° as Oa z 03 7 ¢ _— oe ee s LTT TV AT TT Sof Tt iitii tH | 2©@® | e LL LIA IAL LT ieee ee | i . Z| |_| ll u

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A Z| SS I OS Ws a A ALT [i iT Tt Pe a 0 10 20 30 40 50 10 3.0 10 30 100 I¢—Collector Current mA I¢—Collector Current —mA eo COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs.

10 COLLECTOR CURRENT 10, COLLECTOR CURRENT ___

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| Leer TCM ol —_| sod ELI LTT L LUT TT) @ g Ol - ° i 0 30 10 30 100 1 2 5 10 20 50 100 I¢—Collector Current —mA \\¢—Collector Current —mA

COLLECTOR CURRENT vs. RESISTOR vs. 1000, INPUT VOLTAGE 100 AMBIENT TEMPERATRUE ======>2=fe po SS A A 3000 aes a 80 ott | TTA } Fad eee eee g

5 See 7; 89

[s} eS KS SS 6 SS S 5 aft t Tryp pers a ee ee é ' = J 40 | § ttl iti itt it ‘ a Se a a a ao-}- Tr Pre 0 | | PP ay we LL TT TE TET [ } 0 02 04 06 o8 10 12 -25 ° 25 50 75 100 Vin—Input Voltage—V Ta—Ambient Temperature—"C a 3

FA1L4Z oe - NEC aecron vevice eo. TC-—2117 October 1987M Printed in Japan co