FA1L4M NEC | Alldatasheet

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RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS ——-||_—- FEATURES in millimeters | © Resistors Built-in TYPE . 2,840.2 c 33 +01, B q 15 0.655 A Ry = 47 ka — 1 Rp =47kQ al 8 eo} 2S . . Fe © Complementary to FN1L4M a] 8 in 33 ! S| ry | Co | ABSOLUTE MAXIMUM RATINGS 1 é | Maximum Voltages and Currents (Ta=25 °C) Marking ' Collector to Base Voltage Vcso 60 Vv ‘ 3 Collector to Emitter Voltage Vceo 50 v 4 log 3 i Emitter to Base Voltage VeEBO 10 v

6 Cat | Collector Current (DC) Ic 100 mA

a ha i Collector Current (Pulse) Io 200 mA

2 Maximum Power Dissipation

: ° at 25 °C Ambient Temperature Pr 200 mW | 1. Emitter j Maximum Temperatures | 3: collector Marking: 131 Junction Temperature T; 150 °c Lo — - Storage Temperature Range Tstg —55to+150 °C bad ELECTRICAL CHARACTERISTICS (Ta=25 °C) Collector Cutoff Current 1cBo [|_| _ 100 [ »A_| Vcp=50V, le =0 DC Current Gain het” 340 |__| Vce=5.0V, I¢=5.0mA DC Current Gain [heer | 95 | 640 rT Ve = 5.0 V, Ic = 50 mA Collector Saturation Voltage [Vcewa |_| 04 | 02 | V | Ic=5.0mA,1g=0.25mA Low-Level Input Voltage [vr [| t.07 [08 | v__| Vce=50V.Ic=100HA High-Level Input Voltage Vin* aw | | V | Vce=0.2V, Io= 5.0 mA [‘Reisorraio dm foe fo fo | | a Turn-off Time [ 248 | 60 | us PW = 2us, Duty Cycle s 2% @ * Pulsed: PW 350 ys, Duty Cycle = 2% NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NeECCorporation 1985 rrr

e FA1L4M ase eee se NIC exon never TYPICAL CHARACTERISTICS (Ta = 25 °C) : : wv R CURRENT AMBIENT TEMPERATURE COLLECTOR 70 EMITTER VOLTAGE @ 50, — “TL LLL] LAE Tot ETT] Al —t 2 og + | | | tT ty] | Veer © 200 aof—t —T | L = s | ALT HHH LY Lp

3 T =

2 KET TT Tt et Woe

Pet ENE) Wee = 2 20 ———t 3 \\ 3 OL

2 HAH See ae

es , COPE SEREPSS008 0) 50 100 150 200 250 C_ rid [ [| Ta—Ambient Temperature—"C 0 a i 40 1 80 10 @ VcE—Collector to Emitter Voltage—V COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs, COLLECTOR CURRENT COLLECTOR CURRENT 0.5, 10004 ee so os LT TT TTT TA jcess0v EE eae Ee eH T ood L_| yy 500 La PCO pa pct Ae 3 f Z; B os [ g Yr LETT VY il A ® Y 3 CR 5 02| fj 8 Bee eee 3 | | | VA f | i | i | 2 60) a

8 LA es a

6 Zane ce Se a

8 »-2nnennee aot — | EET ee ee | ° i0 2030 a0 0 1020 — 501020 — 30-100 . \\¢—Collector Current—ma I¢—Collector Current—mA COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT LO 50 =i == ooo 7 ee" a

8 Fh oot |

ce a a . soot | | UME CTT = & 10 tt tt § 2 |S ae Bo 2 sop et voe=02 vo HH

5 SS SSE EH _ Fa Ae

§ 008 ee et eo, bn ch 2" | {III =e cH | eet Te : 5 op TT aati e S 0.02 eee 1.0 eee ———— sees * mL LLM ETT SSSecriie eri

0.01 SE) OO |

10 2.0 5.0 10 20 50 100 10 2.0 5.0 10 20 50 100 2 '¢—Collector Current—mA Ig~Collector Current~mA a

@ COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE 1000) SSS] SS SS FS 100 [\\ce=80 Se —— a or a YA A ee i) oe A ~— Ha ime f| | 1 80 : Sein Geil

5 See ea q

2 ———— er a S 60 : See saree FS sy a a A O'S 4 : Se ee a & z Ho PTT 3 & iA ed _* S$ oh t o B&F « | 20 Tyr e ol LTE YT ET 04 0.6 08 10 12 14 1.6 —25 0 25 50 75 100 Vin—Input Voltage—V Ta—Ambient Temperature—"C SWITCHING TIME vs. COLLECTOR CURRENT a, a A re Veo=5 V ‘ ea PW=2 us

20 TFs Duty Cycles 2 %

@ eo LLTIMNe TT : 2 0b —} i. —— a eee ce eet —— soe eet bo Ft FH rit — EH 2 os TNC ees oe SEH é pa eax enill t 2 | eee 0.1 | ~ ——— er r ) — eo oss or os os | 10 2.0 5.0 10 20 50 100 Ig—Collector Current—mA

TC—1656A October 1987M Printed in Japan