FA1L3Z NEC | Alldatasheet
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NEC | SILICON TRANSISTOR ELECTRON DEVICE / . / FA1L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD ee
FEATURES
in millimeters @ Resistor Built-in TYPE B 2 2840.2 Ry =4.7kQ sd 15 0.657815 Ry 3 E _ © Complementary to FN1L3Z t Ee | 4 2 3 af | ABSOLUTE MAXIMUM RATINGS é| = a Maximum Voltages and Currents (T, = 25 °C) “ a | 33 Collector to Base Voltage Vso 60 v =: By Collector to Emitter Voltage Vceo 50 Vv Emitter to Base Voltage VesBo 5 Vv ” Marking. Collector Current (DC) Ic 100 mA 2 3 Collector Current (Pulse) le 200 mA @ x Fy Maximum Power Dissipation 2 3 Total Power Dissipation a at 25 °C Ambient Temperature Py 200 mW 1. Emi 3 Maximum Temperatures 2) Bae 2 Junction Temperature Tj 150 °c 3. Collector Storage Temperature Range Tstg —55to+150 °C ELECTRICAL CHARACTERISTICS (T, = 25 °C) |e | DC Current Gain | hreo* | 30 | | | * Pulsed: PW $350 us, Duty Cycle 52 % hee Classification [mening [136 [ 7 [8] Drees | iae020 | tow 0 | HO | NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1987
TYPICAL CHARACTERISTICS (T, = 25 °c) TOTAL POWER DISSIPATION v. COLLECTOR CURRENT ve @ AMBIENT TEMPERATURE 50 COLLECTOR TO EMITTER VOLTAGE 250) 77 — T_] PT Ty Ty yy ee | fo Mngt | td Zot | | tt tt tT sf |_| rt E 200 aol?) al aa Nee é Tf TT asoum | or z yi te TT é LL Nt Ty Tl s If | | LL beet Poot | EAL TTT TT = |" TT eC OC NCEE ETS i off et OPEN t Ape ee se ° ft tt ff asl | | CEEP EEC Trey fy | 080 wo 450 G00 B80 Pi tity tT titty ' T,—Ambient Temperature—"C 0 2.0 40 60 80 10 VcE—Collector to Emitter Voltage—V e COLLECTOR TO EMITTER VOLTAGE vs. DC CURRENT GAIN vs.
05 COLLECTOR CURRENT 3000, Mint CURRENT
LT TT TET Tp [TTT Tvce=s0v ] | bof PEP Pe A | | & 04 s LILI TTT PT eg | g eee a | . aes & Ft — | 2 03 2 a A OS | 3° ITE LIAS TY 5 — | 5 Ji 3 oe eo.
2 PTT TTT |
| E02 BEEEyAyeen 8 |_| HT nae Pt LUM TU Sol Ar TTT id Sa eceee | 2 | A a a ie . SO OS OS OS A OO | A7| TTT tErtrey a _.2S See sol LE i} \\ Collector C " A 10 3.0 10 30 100 ic Collector Current — ent Ig—Collector Current —mA e | COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. 10 a CURRENT 20, COLLECTOR CURRENT = (TN 1 a a OO A OO a FOR opt tt | 8 ae ee ee ss | ey | aera SL LET LT eA & of tte | | Al S41 | THN TeAZeull Bo 2 Vi
5 SSS ea 3
| a ees eee s LL iil 8 be < 1° a ee nee i = Coe 2 =e ot ETI TI [4 tJ oo1 oo | | LITT TT TTT 10 3.0 10 30 100 10 3.0 10 30 100 I¢—Collector Current —mA I¢—Collector Current—mA pS
NEC sucrron vevice . FA1L3Z | 50 | a ====—— =e aon a mu RRR RE e ef ATT SST
2 AR LUT ENNIIT|
; ry Pol | tT TT TTT td Cope hte |
8 BERS RRS S SESE eee ee
| Ce Se 5° SEHT SSSR) ae ee a ee FE Aa Tcacs0 y ig 905 Soe /CECAIECECEE Seciiimee i) 02 04 06 08 10 12 10 30 10 30 100 200 e Vin—Imput Voltage —V Ig—Collector Current —mA