FA1F4Z NEC | Alldatasheet
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MEDIUM SPEED SWITCHING | RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS —«|_—s“ FEATURES in millimeters | @ Resistor Built-in TYPE 3 2840.2 c 3 065*8Is 8 q 15 O15, i Ri =22k2 = a mi ff: ba S| . i © Complementary to FN1F4Z # i a 8 32
3 Le ’ 38 ABSOLUTE MAXIMUM RATINGS
4 3S Maximum Voltages and Currents (Ta =25 °C) Marking Collector to Base Voltage Veso 60 v
3 Collector to Emitter Voltage Vceo 50 v
+ 3 Emitter to Base Voltage Veso 5 Vv @ 2 © Collector Current (DC) Ic 100 mA be} ha Collector Current (Pulse) Ic 200 mA = Maximum Power Dissipation
2 Total Power Dissipation
° at 25 °C Ambient Temperature Pr 200 mW 1. Emitter ' Maximum Temperatures 2. Bate tor Junction Temperature Tj 150 °C - . Storage Temperature Range Tstg -—55to+150 °C @ ELECTRICAL CHARACTERISTICS (Ta = 25 °C) [—_cxanacreniene —[evwaou Twn. [ve [wax [ur | vesreonorions | [caiecor curt Curent [cso | |_| 100 | A |vopreoviie-o [Hine input Vorane Min? | 30 | 105 | «|v (Vee=02V.Ic=80mA | | [input Restor Sims | me ee fe | SCSC~* * Pulsed: PW S 350 us, Duty Cycle = 2% hee Classification @ [_Morking [tee [tes | ts [rer [vera [a0 a00 | 2001600 | NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. © NEC Corporation 1987
TYPICAL CHARACTERISTICS (T, = 25 °c) . . TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE 250, 50 = CPT] pre zoo | TTT TT <4 y aa ENG Zn aane S| ee PecERE EEE PL fe 2 8 é | See esC CED TET 6 off ot Ta EEN 2 ae a to ASREERENEE COCOA LET yr TTT yyy ye a ee LT? Tey tt ttt Ta—Ambient Temperature —"C 0) 20 40 60 80 10 ° Peraure VcE—Collector to Emitter Voltage—V t ) ) COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT “CLT TTT) a a 0 vat tL ET TT Ty TT & o4 ‘| 1000 ett TTT yy i esses eee 3 y . Sea ea . 3 os rtf tt ff Jimesy VY Cs a eG | CCC Y / = See r ) | .§ || YI Aw Fol i 1 Po S888 768 eee ee | |, E: Fel bZEPLLLL ee ee ee S 01 LAS — a cr ro > | per | ee Z| aS SS SO AEE PE es a A | | sol | TTT TT TT co 10 20 30 40 50 10 3.0 10 30 100 \\¢—Collector Current—mA I¢—Collector Current —mA e COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. COLLECTOR sarunat ea eater ESS cto Ee i s(t % a ee ee AV ABEGEE a ; a ~ tL eAZ TT ; | : Zl 3 i SL LUM A WA
2 ES ee See eee oe aa ees eee IEEEE
3 [HH eg es | 3 a | £os a ES A OS i a a ig a a a a oot a es a 2 teem Tl oot | | LUI @ * wet LTTE LTT a oor 3.0 10 30 Too ory 2 5 10 20 50 100 Ic¢—Collector Current—mA \\¢—Collector Current—mA
NEC siecrnon oevice FA1F4Z e@ COLLECTOR CURRENT vs RESISTOR vs INPUT VOLTAGE AMBIENT TEMPERATURE 1000 50 ======7-==ee a so0f aes ne a 40) i ee + 100 ——— | i _—— os a ee ee S °° SS A SS AS | . Se ae | 3 3s LTTTT PTT yr 3 8 = 20 oo o RSS Sf « A = eee i oo ol So so 10 a ol LTT TET TT TY TU ; e C) 02 04 O06 O8 10 12 —25 0 25 50 75 700 Vin—Input Voltage—V Ta—Ambient Temperature—"C
e e TC-—2137 , October 1987M Printed in Japan Ce