FA1F4M NEC | Alldatasheet
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_ / FA1F4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS ' FEATURES in millimeters : © Resistors Built-in TYPE c 2840.2 B ES 15 0658s Ry =22k2 Bi Ry Ro = 22 kQ Ss Ho | Ro de a| 8 © Complementary to FN1F4M s| 2 TT a os “4H ai | | 33 ABSOLUTE MAXIMUM RATINGS f-Ft 3 Maximum Voltages and Currents (Ta=25 °C) Collector to Base Voltage Veso 60 v ° Marking Collector to Emitter Voltage Vceo 50 v ° Emitter to Base Voltage VEBO 10 Vv r ) + P| Collector Current (DC) Ic 100 mA 2 3 Collector Current (Pulse) Io 200 mA a Maximum Power Dissipation “ Total Power Dissipation © . at 25 °C Ambient Temperature Py 200 mw 4. Emitter ° Maximum Temperatures Foote ctor Marking: L33 Junction Temperature T; 150 °c a . Storage Temperature Range Tstg —55to+150 °C ~ ELECTRICAL CHARACTERISTICS (T, = 25 °C) [__cwanacrenisnic —[svwor [win [TW [wax [um | _vestoowommons | Collector Cutoff Current [iceo ||| 100 | nA | Vop=50v.ig=0 [occumecon —‘nrea® [#0 | wo || | ver=sov.tcrsoma = [cotestorsrationvoroge _[Veewmi® | | 008 | 02 | V | ig=S0mAtg-025ma | [Loweteveinput Vorase [var [| 105 | 08 |v | vce=s0¥,1¢-100a =i | [Hisbtmetinurvorape [vw | a0 | 16 | | v | versoaviic=soma = | [inowneior Sms psa [mo fms fe [Cid : * Pulsed: PW = 350 us, Duty Cycle = 2% ' they are free from patent infringement. © NECCorporation 1985 ee
TYPICAL CHARACTERISTICS (T, = 25 °c) . AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE “TT TLL | “CLL | [ <j} | oe ee of Ys PRE LELLCE par rt i PACERS CI tir 2 sol. Z do | nL
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: EOE —] 63 PeBRSSSO § 100 A § AZ| a a : 2 etPTePN Tere > pe i] 50) ~ e*CETT TAT TTT weet Ty Tt COP ON Pf tf on | | 10 0 200 250, ° 508 rrrTTryTt tT Tt 4 , Ta—Ambient Temperature—"C oO 2.0 40 60 8.0 10 e Vo ~ Collector to Emitter Voltage—V “CCLLCE LI “Es FE vee=50 v | ee See eee ee oes se ral [ rs a aon aT meme nach | 5 03] f z pez, | ease sey ee) eeenlll|| & y 100) ee ee Ae 3g x— A ee = 02 b, ° yr er
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8 | £ LA Aa 8 1 | | ees A | TT TT y tte | 8s [eat tI % lL. | Ae a il e oO 10 20 30 40 50 10 2.0 5.0 10 20 50 100 I¢—Collector Current—mA. Ig—Collector Current~mA. COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. bo 50 SSS me | a > SS RS [| [| ® of —) 1 ro) ell 2 a ee | 201 LTT eee aah ra c > = :° A B SSSR ete 2 baste Bo Eee a FH ® o4 pot i tity HAA > sop —} TTPO a 5 ——<— ooo et so maanee s Ett oh ieee, |
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a —— == 200i pet > -—t a — oes Et et 0.01 osha TT 2 \\g-Collector Current—mA I¢—Collector Current—mA eee
® COLLECTOR CURRENT vs. RESISTOR vs. INPUT VOLTAGE AMBIENT TEMPERATURE
1000 SSS SS SS 50
[voe=50 va —— a ss oe oo | es rr coe oe A A YA — Ee eee “ ECCOMMICOETE i a aae Stare Saar eae g _S— se oo oo os gS 30]
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a or 10) ee a es PA 2 ol TAT TT PT ETT ‘ | @ os 06 O8 10 12 14 16 ~2 0 5 50 75 700 Vin—Input Voltage~V Ta—Ambient Temperature" SWITCHING TIME vs. COLLECTOR CURRENT 8° Tins [oT TTT veo=s v Se ee 20 a Duty Cycles 2 % 4 ‘ Nail @ 2 ‘ oh Nd A » os fT Pr = ae
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0.1 ec aalll| _— Sse ee _—— Ss os oe cr @ oosL___ TTT TT re) . 1020 50. 10 20 30 100 ; lg—Collector Current—mA | _
FA1F4M _ NEC sictnon vevice e * | TC—1655A October 1987M Printed in Japan ca