FA1A4P-T1B

FA1A4P NEC | Alldatasheet

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| MINI MOLD re ee FEATURES PACKAGE DIMENSIONS i © Resistors Built-in TYPE H in millimeters | . | c i 7 2840.2 | 8 3 | Ry Rg =47kQ @ | . te | | ROE FY i S| 6 to ! © Complementary to FN1A4P 1 a DI “4-4 | A 3 : 3 a : 3 | ABSOLUTE MAXIMUM RATINGS tH 4 Maximum Voltages and Currents (Ta = 25 °C) ; Marking | Collector to Base Voltage Vecso 60 Vv

3 Collector to Emitter Voltage VcEO 50 Vv

r ) « 3 i Emitter to Base Voltage Veso 5 v : g Collector Current (DC) Ic 100 mA = 3 Collector Current (Pulse) le 200 mA - i Maximum Power Dissipation : S ! Total Power Dissipation ° | at 25 °C Ambient Temperature Pr 200 mW | 1. Emitter | Maximum Temperatures | 2. Base | i 7 °, | 3. Conector Marking: L34 | Junction Temperature Tj 150 of to Storage Temperature Range Tstg —55 to +150 Cc ELECTRICAL CHARACTERISTICS (T, = 25 °C) Collector Cutoff Current 'cBO | 100 nA Vep = 50 V, le =0 DC Current Gain hre1* 85 210 340 Vce = 5.0 V, Ig= 5.0 mA DC Current Gain hreo* 95 370 Vce = 5.0 V, Ic = 50 mA Collector Saturation Voltage | VCE(sat)* 0.04 0.2 1¢ = 5.0 mA, Ig = 0.25 mA Low-Level Input Voltage vee 0.65 05 VcE = 5.0 V, Ic = 100 uA High-Level Input Voltage Vin* 30 | o8 | | v Ve = 0.2 V, I¢ = 5.0 mA Input Resistor Ry 7.0 ko E-B Resistor | Ro 47.0 61.1 Turon Time ton oa | 02 Voowsv.van sv | Store Time [eg [ao | us] Fyn ke @ * Pulsed: PW < 350 us, Duty Cycle $2 % NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. | . © NEC Corporation 1987

| FA1A4P NEC aicraow vevice : TYPICAL CHARACTERISTICS (T, = 25 °c) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. r

250 AMBIENT TEMPERATURE 50, —SOLLECTOR TO EMITTER VOLTAGE y

[Ty TT TT ree] fe eee | : Foot | | | | PT TT LWT | oda | E200 40] Vi = {ft § PAPE Te ¢ Heat tt A d — EXER EEE -* | an CE OREEEErr 7 eeeeeeeee es NeCee tf 3 an Ae |_| ae A NN 1 Pe es 2. 2 Poor ON pot tL ° 30100 150 200 250 rrerert tT TT Tt 4 a 0 20 40 60 8.0 10 Ta~Ambient Temperature —"C VcE—Collector to Emitter Voltage —V e@ COLLECTOR TO EMITTER VOLTAGE vs. OC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR CURRENT “TTT TLL FS veeas05 a A OS > - a 8 } & os tf vee TT | 500 a A A COTY _ ae Gece 3 200 a | 2 03 7 rs y opr yy wz Ps 2 fli ieA AL 3 Pat 5 02 [| 8 a A 3 || | VA Ly sof = Cai s a |

8 MATE Coe

8 ‘ PE PI A A 20 HH nt ai [| | A ot ELT ETT o 20 40 60 80 100 10 (20 5.0 10 20 50-100 I¢—Collector Current —mA Ig¢-Collector Current mA e COLLECTOR SATURATION VOLTAGE vs. INPUT VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 aes si J 20 i PELE maui ll feet etl " HEHE Ht 3 iM meet > FH rast || [|] a) Ht oy 5 op & Ht Jo | 3 E Co fii

3 J 2 oot | PTT YRS Ti

~ OL Fe 2.7 7

5 SSS Sat E Ai

= josh ttt © rp — t+ | been | tt 6 008 es re i ee i ee est a spt HH §002-—] a | | ef CEI TT @ 001 102.0 5.0 10 20 50-100 10 30 10 30 100 : Ig—Collector Current —mA I¢—Collector Current—mA

NEC siecrron vevice FA1A4P COLLECTOR CURRENT vs. SWITCHING TIME vs. = 000 INPUT VOLTAGE 50 COLLECTOR CURRENT

0 SSS v0 | ET —_Tvnesv

Fa Pee Voces V | eS a A A ee + PW=2 us eae A Ltt LTE Netty cite «6 ) « ELL J yyy Ty yy 20 iN ol tlt pele | | | eI NTI = 100 ee a a 2 10 IN | : ESS SS Se BOR NY | é as or or | ee 2 See ee ° ee os oe rs i Soe s 1 a ee ee | | 8 | SP se | | SSS SS SSS + 02 mmaatil === —--— == <== =.= ——— ——— HH _—— ace eee 10 oosC TT oO 02 04 06 08 10 12 10 20 5.0 10 20 50 100 @ Vin—Input Voltage—V Ig—Collector Current —mA ; |

; - | ee Tc-2118 . October 1987M | Printed in Japan ee