FA1A4M

FA1A4M NEC | Alldatasheet

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Technical content

© 1985 DATA SHEET SILICON TRANSISTOR FA1A4M

FEATURES

• Resistors Built-in TYPE B R 1 ER 2 C
• Complementary to FN1A4M ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) Collector to Base Voltage V CBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage V EBO 10 V Collector Current (DC) I C 100 mA Collector Current (Pulse) IC 200 mA Total Power Dissipation P T 200 mW (TA = 25 ˚C) Junction temperature T J 150 ˚ C Storage Temperature Range T stg –55 to +150 ˚ C ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current I CBO 100 nA VCB = 50 V, IE = 0 DC Current Gain h FE1 * 35 62 100 V CE = 5.0 V, IC = 5.0 mA DC Current Gain h FE2 * 80 230 V CE = 5.0 V, IC = 50 mA Collector Saturation Voltage V CE(sat)* 0.05 0.2 V I C = 5.0 mA, IB = 0.25 mA Low-Level Input Voltage V IL* 1.08 0.8 V V CE = 5.0, IC = 100 µA High-Level Input Voltage V IH* 3.0 1.4 V V CE = 0.2 V, IC = 5.0 mA Input Resistor R 1 7.0 10 13 k Ω Resistor Ratio R 1/R2 0.9 1.0 1.1 Turn-on Time t on 0.06 0.2 µsV CC = 5 V, Vin = 5 V Storage Time t stg 2.0 5.0 µs R L = 1 kΩ Turn-off Time t off 2.15 6.0 µs PW = 2 µs, Duty Cycle ≤ 2 % * Pulsed: PW = 350 µs, Duty Cycle = 2 % MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD PACKAGE DIMENSIONS in millimeters Document No. D10215EJ3V0DS00 (3rd edition) (Previous No. TC-1654) Date Published October 1995 P Printed in Japan 2.8±0.2 1.5 0.65 2.9±0.2 0.950.95 1 3 0.4 0.4 +0.1 –0.15 Marking 0.3 0 to 0.1 1.1 to 1.4 0.16 Electrode Connection 1. Emitter 2. Base 3. CollectorMarking : L33 +0.1 –0.05 +0.1 –0.05 +0.1 –0.06

TYPICAL CHARACTERISTICS (T A = 25 °C) 250 200 150 100 50 100 150 200 2500 T A – Ambient Temperature – ˚C PT – Total Power Dissipation – mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free air 1.0 0.8 0.6 0.4 0.2 20 40 60 80 1000 I C – Collector Current – mA VCE – Collector to Emitter Voltage – V COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT

10 VVin = 5 V

2.0 10 505.0 1001.0 IC – Collector Current – mA VCE(sat) – Collector Saturation Voltage – V COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT TA = 75 ˚C –25 ˚C 25 ˚C 2.0 1.0 0.5 0.2 0.1 0.05 0.02 IC = 10·IB 2468 1 00 VCE – Collector to Emitter Voltage – V IC – Collector Current – mA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 220 A 200 A 180 A 160 A 140 A 120 A 100 A IB = 80 A DC CURRENT GAIN vs. COLLECTOR CURRENT 100 IC – Collector Current – mA hFE – DC Current Gain 1.0 2.0 5.0 10 20 50 500 200 100 TA = 75 ˚C –25 ˚C 25 ˚C VCE = 5.0 V INPUT VOLTAGE vs. COLLECTOR CURRENT 100 IC – Collector Current – mA Vin – Input Voltage – V 1.0 2.0 5.0 10 20 50 5.0 2.0 1.0 0.5 TA = 75 ˚C –25 ˚C 25 ˚C VCE = 5.0 V 0.2 V µ µ µ µ µ µ µ µ

COLLECTOR CURRENT vs. INPUT VOLTAGE Vin – Input Voltage – V IC – Collector Current – A 1000 100 1.0 SWITCHING TIME vs. COLLECTOR CURRENT 100 IC – Collector Current – mA t – Swiching Time – s 1.0 2.0 5.0 10 20 50 5.0 2.0 1.0 0.5 0.2 0.1 0.05 RESISTOR vs. AMBIENT TEMPERATURE 100 TA – Ambient Temperature – ˚C R 1 – Resistor – kΩ –25 75 50250 Vin = 5 V VCC = 5 V PW = 2 s Duty Cycle ≤ 2 % tstg tf ton VCE = 5.0 V TA = 75 ˚C –25 ˚C25 ˚C µ µ µ REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual IEI-1207 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 [MEMO]