F80UP40DN THINKISEMI | Alldatasheet

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T C

ELECTRICAL CHARACTERISTICS

T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 400 V V Maximum Repetitive Reverse Voltage RRM 400 V I Average Forward Current F(AV) T C 40 =110°C, Per Diode A T C 80 =110°C, Per Package A I RMS Forward Current F(RMS) T C 56 =110°C, Per Diode A I Non-Repetitive Surge Forward Current FSM T J 400 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 156 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 0.8 °C /W Weight 6.0 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R -- =400V -- 10 µA V R =400V, T J V Forward Voltage F I F -- =40A 1.3 1.8 V I F =40A, T J -- =125°C 1.1 V t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 22 -- ns t Reverse Recovery Time rr V R =200V, I F =40A di F /dt=-200A/μs, T J =25°C 52 -- ns I Max. Reverse Recovery Current RRM -- 4.5 -- A t Reverse Recovery Time rr V R =200V, I F =40A di F /dt=-200A/μs, T J =125°C 71 -- ns I Max. Reverse Recovery Current RRM -- 9 -- A F80UP40DN Pb Free Plating Product F80UP40DN

80 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE F80UP40DN using matured FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. TO-3PN/TO-3PB Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside Anode © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05

I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C 120 100 0 0.3 0.6 0.9 1.2 1.5 di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 t rr (ns) 120 150 V R =200V T J =125°C I F =80A I F =20A I F =40A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 100 Q rr (nc) 200 300 400 500 V R =200V T J =125°C I F =80A I F =20A I F =40A V R =200V T J =125°C I F =80A I F =40A I F =20A K f Duty 0.5 0.2 0.1 0.05 Single Pulse 0.2 0.4 1.2 0.6 Z thJC (K/W) 0.8 I RRM Q rr t rr T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 600 F80UP40DN © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05

Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM Dimensions in Millimeters Fig8. Package Outline F80UP40DN © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05