NTF6P02T3_06 ONSEMI | Alldatasheet

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Technical content

Features

  • Low RDS(on)
  • Logic Level Gate Drive
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • Pb−Free Package is Available Typical Applications
  • Power Management in Portables and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 Vdc Gate−to−Source Voltage VGS ±8.0 Vdc Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 /C0109s) ID ID IDM −10 −8.4 −35 Adc Apk Total Power Dissipation @ TA = 25°C PD 8.3 W Operating and Storage Temperature Range TJ, Tstg −55 to +150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25/C0087) EAS 150 mJ Thermal Resistance − Junction to Lead (Note 1) − Junction to Ambient (Note 2) − Junction to Ambient (Note 3) R/C0113JL R/C0113JA R/C0113JA 71.4 160 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Steady State. 2. When surface mounted to an FR4 board using 1” pad size, (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. D G S −6.0 AMPERES −20 VOLTS RDS(on) = 44 m/C0087 /C0040/C0084/C0121/C0112/C0046/C0041 P−Channel Device Package Shipping †

ORDERING INFORMATION

NTF6P02T3 SOT −223 4000/Tape & Reel SOT−223 CASE 318E STYLE 3 MARKING DIAGRAM & PIN ASSIGNMENT http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6P02 /C0071 A = Assembly Location WW = Work Week 6P02 = Specific Device Code /C0071 = Pb−Free Package AWW Gate Drain Source Drain (Note: Microdot may be in either location) SOT−223 (Pb−Free) NTF6P02T3G 4000/Tape & Reel /C0071

http://onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = −250 /C0109Adc) Temperature Coefficient (Positive) V(BR)DSS −20 −25 −11 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = −20 Vdc, VGS = 0 Vdc) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS −1.0 −10 /C0109Adc Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS − − ± 100 nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = −250 /C0109Adc) Threshold Temperature Coefficient (Negative) VGS(th) −0.4 −0.7 2.6 −1.0 Vdc mV/°C Static Drain−to−Source On−Resistance (Note 4) (VGS = −4.5 Vdc, ID = −6.0 Adc) (VGS = −2.5 Vdc, ID = −4.0 Adc) (VGS = −2.5 Vdc, ID = −3.0 Adc) RDS(on) m/C0087 Forward Transconductance (Note 4) (VDS = −10 Vdc, ID = −6.0 Adc) gfs − 12 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss − 900 1200 pF Output Capacitance Coss − 350 500 Transfer Capacitance Crss − 90 150 Input Capacitance (VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss − 940 − pF Output Capacitance Coss − 410 − Transfer Capacitance Crss − 110 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time (VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 /C0087) td(on) − 7.0 12 ns Rise Time tr − 25 45 Turn−Off Delay Time td(off) − 75 125 Fall Time tf − 50 85 Turn−On Delay Time (VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 /C0087) td(on) − 8.0 − ns Rise Time tr − 30 − Turn−Off Delay Time td(off) − 60 − Fall Time tf − 60 − Gate Charge (VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc) (Note 4) QT − 15 20 nC Qgs − 1.7 − Qgd − 6.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = −3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = −2.1 Adc, VGS = 0 Vdc) (IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − −0.82 −0.74 −0.68 −1.2 Vdc Reverse Recovery Time (IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A//C0109s) (Note 4) trr − 42 − ns ta − 17 − tb − 25 − Reverse Recovery Stored Charge QRR − 0.036 − /C0109C 4. Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2.0%. 5. Switching characteristics are independent of operating junction temperatures.

Figure 11. FET Thermal Response

http://onsemi.com PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D E b e 12 3 0.08 (0003) A C NOTES: /Em/figure1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. /Em/figure2. CONTROLLING DIMENSION: INCH. 1.5 0.059 /C0466mm inches/C0467SCALE 6:1 3.8 0.15 2.0 0.079 6.3 0.2482.3 0.091 2.3 0.091 2.0 0.079 SOLDERING FOOTPRINT* HE DIM A MIN NOM MAX MIN MILLIMETERS 1.50 1.63 1.75 0.060 INCHES A1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 NOM MAX L1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 HE − − 0° 10° 0° 10°/C0113 /C0113 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN *For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 NTF6P02T3/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.