F6N80

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Document overview

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Technical content

Features

• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter FQP6N80C FQPF6N80C / FQPF6N80CT Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 °C/W RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C /W TO-220 GDS TO-220F GDS G S D * Drain current limited by maximum junction temperature. Symbol Parameter FQP6N80C FQPF6N80C / FQPF6N80CT Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A - Continuous (TC = 100°C) 3.2 3.2 * A IDM Drain Current - Pulsed (Note 1) 22 22 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 680 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 15.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 158 51 W - Derate above 25°C 1.27 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead T emperature for Soldering, 1/8" from Case fo r 5 Seconds. 300 °C

Package Marking and Ordering Information ©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 www.fairchildsemi.com2 FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET Electrical Characteristics TC = 25°C unless otherwise noted. Part Number Top Mark Package Reel Size Tape Width Quantity FQP6N80CFQP6N80C TO-220 N/A N/A 50 units Packing Method Tube TO-220F Tube N/A N/A 50 unitsFQPF6N80CFQPF6N80C Tube N/A N/A 50 unitsFQPF6N80CTFQPF6N80CT TO-220F Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 5.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.97 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance V GS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1010 1310 pF Coss Output Capacitance -- 90 115 pF Crss Reverse Transfer Capacitance -- 8 11 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4) -- 26 60 ns tr Turn-On Rise Time -- 65 140 ns td(off) Turn-Off Delay Time -- 47 105 ns tf Turn-Off Fall Time -- 44 90 ns Qg Total Gate Charge VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4) -- 21 30 nC Qgs Gate-Source Charge -- 6 -- nC Qgd Gate-Drain Charge -- 9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs -- 615 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µC

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

• I SD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
• I SD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width www.fairchildsemi.com7 FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET ©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1

Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB ically the warranty therein, which covers Fairchild products.

Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead ically the warranty therein, which covers Fairchild products.

©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 www.fairchildsemi.com10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESI GN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIO NS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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