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Technical content

Features

  • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 2.75 A
  • Low Gate Charge (Typ. 21 nC)
  • Low Crss (Typ. 8 pF)
  • 100% Avalanche Tested www.fairchildsemi.com©2003 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0

FQP6N80C / FQPF6N80C N-Channel MOSFET Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 42mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.97 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance V GS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω gFS Forward Transconductance VDS = 50 V, ID = 2.75 A (Note 4) -- 5.4 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1010 1310 pF Coss Output Capacitance -- 90 115 pF Crss Reverse Transfer Capacitance -- 8 11 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4, 5) -- 26 60 ns tr Turn-On Rise Time -- 65 140 ns td(off) Turn-Off Delay Time -- 47 105 ns tf Turn-Off Fall Time -- 44 90 ns Qg Total Gate Charge VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) -- 21 30 nC Qgs Gate-Source Charge -- 6 -- nC Qgd Gate-Drain Charge -- 9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) -- 615 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µC www.fairchildsemi.com©2003 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0

FQP6N80C / FQPF6N80C N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L I AS 2----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p EAS =L I AS 2----2 AS =L I AS 2----2 1----2 BV DSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D t p www.fairchildsemi.com©2003 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0

FQP6N80C / FQPF6N80C N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • I SD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
  • I SD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width www.fairchildsemi.com©2003 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0

FQP6N80C / FQPF6N80C N-Channel MOSFET Package Dimensions 1.52 ±0.10 0.80 ±0.10 2.40 ±0.20 10.00 ±0.20 1.27 ±0.10 ø3.60 ±0.10 (8.70) 10.08 ±0.30 18.95MAX. (1.70) (3.70)(3.00) (1.46) (1.00) (45°) 1.30 ±0.10 1.30+0.10 –0.05 0.50+0.10 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] TO-220 Dimensions in Millimeters www.fairchildsemi.com©2003 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0

FQQP6N80C / FQPF6N80C N-Channel MOSFET Package Dimensions (Continued) (7.00) (0.70) MAX1.47 (30°) 15.87 ±0.20 6.68 ±0.20 9.75 ±0.30 4.70 ±0.20 10.16 ±0.20 (1.00x45°) 2.54 ±0.20 0.80 ±0.10 9.40 ±0.20 2.76 ±0.20 0.35 ±0.10 ø3.18 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 0.50+0.10 –0.05 TO-220F Dimensions in Millimeters www.fairchildsemi.com©2003 Fairchild Semiconductor Corporation FQP6N80C / FQP6N80C Rev. C0

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