F6840Q GWSEMI | Alldatasheet
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Technical content
Features
VDS=60V, ID=5A RDS(ON)=35mΩ@VGS=10V(Typ.) RDS(ON)=39mΩ@VGS=4.5V(Typ.) High Power and current handing capability Lead free product is acquired Surface Mount Package S2S1 D1 D2 Schematic diagram Main Applications Battery Protection Load Switch Power Management D1 D1 D2 D2 G2S2G1S1 SOP8 Top View F6840Q
Electrical Characteristics (T Ambient =25º C unless noted otherwise) Symbol Parameters Conditions Mi Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS =0V, I D =250μA Volt I DSS Zero Gate Voltage Drain Current V DS V, V GS =0V μ A I GSS Gate Body Leakage Current V GS 20V, V DS =0V 100 nA On Characteristics V GS(th) Gat e Threshold Voltage VDS= VGS, ID=250μA 1. Volt R DS(ON) Drain Source On State Resistance VGS=10V, ID=5A m Ω VGS=4.5V, ID=4A m Ω gFS Forward Transconductance VDS=10V, ID=1A S Dynamic Characteristics C iss Input Capacitance VDD=30V, VGS=0V , F=1MHz pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance pF Switching Characteristics td(on) Turn on Delay Time V DD V, V GS =10V R G nS tr Turn on Rise Time nS td(off) Turn Off Del ay Time nS tf Turn Off Fall Time nS Q g Total Gate Charge V GS V, V DS V, I D A nC Q gs Gate Source Charge nC Q gd Gate Drain Charge nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature F6840Q
Typical Electrical and Thermal Characteristics F6840Q
C 0.25mm L A B e D S E H DIM MILLMETERS INCHES MIN MAX MIN MAX A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.008 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 L 0.50 0.93 0.020 0.037 S 0.44 0.64 0.018 0.026 Plastic surface mounted package; 8 leads SOP8 PACKAGE OUTLINE F6840Q