F650B VBSEMI | Alldatasheet

Document overview

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Technical content

N-Channel 200 V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFETS
  • 1 75 °C Junction Temperature
  • New Low Thermal Resistance Package
  • Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

  • Industria l Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). TO-220AB GDS N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VDrain-Source Voltage DS 200 VVGate-Source Voltage GS ± 20 TCContinuous Drain Current (TJ = 175 °C) = 25 °C 3ID TC A = 125 °C 23 IPulsed Drain Current DM 70 IAvalanche Current AR 35 Repetitive Avalanche Energya EL = 0.1 mH AR 61 mJ TC Maximum Power Dissipationa = 25 °C 300PD b W TA = 25 °Cc 3.75 TJ, TOperating Junction and Storage Temperature Range stg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter LimSymbol it Unit Junction-to-Ambient (PCB Mount)c RthJA 40 °C/WRJunction-to-Case (Drain) thJC 0.5 RoHS COMPLIANT F650B-VB www.VBsemi.com PRODUCT SUMMARY RDS(on) (:VDS (V) ) ID (A) 0.058at VGS = 1200 0V g R¡pí~¿ÿ400-655-8788 35

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . Typ. Max. Unit Static VDS = 0 V, IDVDrain-Source Breakdown Voltage DS = 250 µA 200 VVGate Threshold Voltage GS(th) VDS = VGS, ID = 250 µA 24 VDS = 0 V, VGSIGate-Body Leakage GSS = ± 30 V ± 250 nA VDS = 200 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ µA= 125 °C 50 VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 70 A Drain-Source On-State Resistancea VGS = 10 V, ID RDS(on) = 20 A 0.058 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.130 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.170 VGS = 6 V, ID = 15 A 0.070 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 70 S Dynamicb CInput Capacitance iss VGS = 0 V, VDS = 25 V, f = 1 MHz 2690 C pFOutput Capacitance oss 200 CReverse Transfer Capacitance rss 110 Total Gate Chargec Qg VDS = 100 V, VGS = 10 V, ID = 45 A 95 140 Gate-Source Charge nCc Qgs 28 Gate-Drain Chargec Qgd 34 RGate Resistance g f = 1 MHz 1.6  Tur n-On Delay Timec td(on) VDD = 100 V, RL = 2.78  ID  45 A, VGEN = 10 V, Rg = 2.5  22 35 Rise Time ns c tr 220 330 Turn-Off Delay Timec td(off) 40 60 Fall Timec tf 145 220 C = 25 °C)Source-Drain Diode Ratings and Characteristics (T b IContinuous Current S 45 AIPulsed Current SM 70 Forward Voltagea VSD IF = 45 A, VGS = 0 V 11 . 5V tReverse Recovery Time rr IF = 45 A, di/dt = 100 A/µs 150 225 ns IPeak Reverse Recovery Current RM(REC) 12 18 A QReverse Recovery Charge rr 0.9 2 µC F650B-VB www.VBsemi.com g

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics Capacitance 100 02468 1 0 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 7 V I D 3 V - Drain Current (A) 120 150 40 1 02 03 0 05 06 0 g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) Transconductance 3000 2500 2000 1500 500 1000 3500 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics Gate Charge 100 0123456 VGS - Gate-to-Source Voltage (V) I D - Drain Current (A) 25 °C - 55 °C TC = 125 °C 0.00 0.02 0.04 0.06 0.08 0.10 0 2 04 06 08 0 1 0 0 RDS(on) - On-Resistance ( ID - Drain Current (A) On-Resistance vs. Drain Current VGS = 10 V 0 30 60 90 120 150 180 V GS Qg - Total Gate Charge (nC) - Gate-to-Source Voltage (V) VDS = 100V ID = 45 A F650B-VB www.VBsemi.com g

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 20 A RDS(on) - On-Resistance (Normalized) tin (s) Avalanche Current vs. Time 100 0.00001 0.001 0.1 1 0.1 (A) IDav 0.01 IAV (A) at TA = 150 °C 0.0001 IAV (A) at TA = 25 °C Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) I S - Source Current (A) 100 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C 290 280 270 260 250 240 230 300 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature (V) VDS ID = 1.0 mA F650B-VB www.VBsemi.com g

Maximum Avalanche and Drain Current vs. Case Temperature 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) - Drain Current (A)I D Safe Operating Area, Case Temperature 100 0.1 1 10 1000 *Limited by rDS(on) 0.001 TC = 25 °C Single Pulse I D - Drain Current (A) 1 ms 10 ms, 100 ms, dc 10 µs 100 µs 100 0.1 0.01 VDS - Drain-to-Source Voltage (V) *VGS minimum V GS at which rDS(on) is specified> Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 10-10-4 3 10-2 Square Wave Pulse Duration (sec) 10-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 F650B-VB www.VBsemi.com g

  • M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C INCHE MILLIMETERS S A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 F650B-VB www.VBsemi.com g

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. F650B-VB www.VBsemi.com