IRIS-F6456S IRF | Alldatasheet
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Features
Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology. Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Low start-up circuit current (100uA max) Built-in Active Low-Pass Filter for stabilizing the operation in case of light load Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. Built-in constant voltage drive circuit Built-in soft drive circuit Built-in low frequency PRC mode (≒20kHz) Various kinds of protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD) INTEGRATED SWITCHER Package Outline TO-247 Fullpack (5 Lead) Descriptions IRIS-F6456S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram SSSS GGGGNNNNDDDD VVVViiiinnnn DDDD OOOOCCCCPPPP////FFFFBBBB IIIIRRRRIIIISSSS----FFFF6666444400000000 Type MOSFET VDSS(V) RDS(ON) MAX AC input(V ) Pout(W) Note 1 230±15% 300 85 to 264 150IRIS-F6456S 650 0.71Ω Key Specifications Data Sheet No. PD 96942A Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ON- duty is narrow, the Pout (W) shall become lower than that of above.
www.irf.com *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 5 due to patterning, the maximum switching current decreases as shown by V 2-5 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. Absolute Maximum Ratings (Ta=25ºC) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note IDpeak Drain Current *1 3-2 16 A Single Pulse V2-5=0.78V T a=-20~+125℃ IL peak=6.4A Vin Input voltage for control part 4-5 35 V Vth O.C.P/F.B Pin voltage 1-5 6 V
58 W With infintite heatsink
2.8 W Without heatsink
Power dissipation for control part (Control IC) *4 Internal frame temperature Refer to recommended in operation operating temperature Top Operating ambient temperature - -20 ~ +125 ℃ Tstg Storage temperature - -40 ~ +125 ℃ Tch Channel temperature - 150 ℃ Single Pulse PD1 Power dissipation for MOSFET *3 3-2 A Single pulse avalanche energy *2 3-2EAS 521 mJ Maximum switching current *5 3-2IDMAX 16 Specified by Vin×Iin -TF -20 ~ +125 ℃ 4-5PD2 0.49 W V2-5 Fig.1 IRIS-F6456S Recommended operating conditions Time for input of quasi resonant signals For the quasi resonant signal inputted to O.C.P/F.B Pin at the time of quasi resonant operation, the signal shall be wider than Tth(2). Vth(2) ＶO.C.P/F.B Tth(2)≧1.0μsec
www.irf.com Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25 ℃, Vin=18V,unless otherwise specified) MIN TYP MAX Vin(ON) Operation start voltage 14.4 16 17.6 V Vin =0→17.6V Vin(OFF) Operation stop voltage 9 10 11 V Vin=17.6→9V Iin(ON) Circuit current in operation - - 20 mA - Iin(OFF) Circuit current in non-operation - - 100 µA Vin=14V TOFF(MAX) Maximum OFF time 45 - 55 µsec - Tth(2) Minimum time for input of quasi resonant signals *6 - - 1 µsec - TOFF(MIN) Minimum OFF time *7 - - 2 µsec - Tj(TSD) Thermal shutdown operating temperature 140 - - ℃ Latch circuit sustaining current *8 DefinitionSymbol Vin=24.5→8.5V Ratings Units Test Conditions Iin(H) - - 400 µ A Electrical Characteristics (for MOSFET) *6 Refer to Recommended operating conditions (See page 2) *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. (Ta=25℃) unless otherwise specified MIN TYP MAX ID=300µA V5-2 =0V (short) VDS=650V V5-2=0V(s h o rt ) V5-2=10V ID=3.2A tf Switching time - - 250 nsec - Between channel and internal frame Ratings Units Test Conditions Drain-to-Source breakdown voltage V Definition VDSS 650 - - Symbol µA On-resistanceRDS(ON) - - 0.71 Ω Drain leakage currentIDSS - θch-F - Thermal resistance 300 -0 . 8 5 ℃/W IRIS-F6456S
www.irf.com IRIS-F6456S MOSFET A.S.O. Curve 0.01 0.1 100 1 10 100 1000 Drain-to-Source Voltage VDS [V] D 0.1ms 1ms Drain current limit by ON resistance ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. IRIS-F6456S IRIS-F6456S A.S.O. temperature derating coefficient curve 100 0 20 40 60 80 100 120 Internal frame temperature TF [℃] A.S.O. temperature derating coefficient[%] IRIS-F6456S Maximum Switching current derating curve Ta=‐20～+125℃ 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 V2-5 [V] Maximum Switchng Current IDMAX[A] IRIS-F6456S Avalanche energy derating curve 100 25 50 75 100 125 150 Channel temperature Tch [ ℃] EAS temperature derating coefficient [%] Ta=25ºC Single Pulse Drain Current ID [A]
www.irf.com IRIS-F6456S Transient thermal resistance curve 0.001 0.01 0.1 time t [sec] Transient thermal resistance θch-c[℃/W] IRIS-F6456S MIC TF-PD2 Curve 0.1 0.2 0.3 0.4 0.5 0.6 0 20 40 60 80 100 120 140 160 Internal frame temperature TF[℃] Power dissipation PD2[W] IRIS-F6456S MOSFET Ta-PD1 Curve 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 Ambient temperature Ta[℃] Power dissipation PD1[W] 1µ 10µ 100µ 1m 10m 100m PD2=0.49[W]PD1=58[W] With infinite heatsink Without heatsink PD1=2.8[W] IRIS-F6456S
www.irf.com O.V.P. START LATCH REG. T.S.D Vth(1) Vth(2) DRIVE O.S.C D S OCP/FB GND 4V i n Pin No. Symbol Description Function Input of overcurrent detection signal / constant voltage control signal
2 S Source Pin MOSFET source
3D D r a i n P i n MOSFET drain
4 Vin Power supply Pin Input of power supply for control circuit
5 GND Ground Pin Ground
O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit STEP DRV – 2 step drive circuit OCP/FB S D Vin GND IRIS-F6456S IRIS
www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. Case Outline 55554444333322221111 RRRR----eeeennnndddd RRRR----eeeennnndddd ----0000....1111 IIIIRRRR IIIIRRRRIIIISSSS ----0000....1111 ----0000....1111 ----0000....1111 3333....3333 a：Type Number F6456S b：Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter：Day Arabic Numerals th letter : Registration Symbol Weight : Approx. 7.5g Dimensions in mm DWG.No.：4B-E01515A Material of Pin : Cu Treatment of Pin : Ni plating + solder dip IRIS-F6456S a b