F60SB60DS THINKISEMI | Alldatasheet

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Technical content

8Amperes,600Volts Insulated Dual Series Connection Ultra Fast Soft Recovery Rectifiers Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • 150 Operating Junction Temperature
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current Application General Description Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Product Feature F60SB60DS using ThinkiSemi lastest FRED FAB process(planar passivation pellet) with ultrafast soft recovery characteristics. F60SB60DS © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.08T ITO-220AB/TO-220F-3L Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "DP" Suffix "DD" Suffix "DS"Suffix "DN" .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Unit : inch (mm) Absolute Maximum Ratings T C = 25 unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 600 V V RWM Working Peak Reverse Voltage 600 V V R DC Blocking Voltage 600 V I F(AV) Average Rectified Forward Current @ T C = 100 I FSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 40 A T J , T STG Operating and Storage Temperature Range -65 to +150 Symbol Parameter Ratings Units R θJC Maximum Thermal Resistance, Junction to Case 8.7 4 A ℃/W

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.08T F60SB60DS

Electrical Characteristics

T C = 25 unless otherwise noted Symbol Parameter Min. Typ. Max. Units V FM 1 I F = 4A I F = 4A T C = 25 T C = 125 2.2 1.7 2.6 - V I RM 1 V R = 600V V R = 600V T C = 25 T C = 125 100 500 µA t rr I F = 1A, di/dt = 100A/µs, V R = 30V T C = 25 t rr I rr S factor Q rr I F = 4A, di/dt = 200A/µs, V R = 390V T C = 25 0.7 ns A nC t rr I rr S factor Q rr I F = 4A, di/dt = 200A/µs, V R = 390V T C = 125 2.8 1.8 ns A nC W AVL Avalanche Energy ( L = 40mH) 5 - - mJ Test Circuit and Waveforms Notes: 1: Pulse: Test Pulse width = 300 µs, Duty Cycle = 2% - 16 23 ns