F60SA60DS THINKISEMI | Alldatasheet

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Technical content

Features

/hexstar2 Low forward voltage drop /hexstar2 /hexstar2 High current capability /hexstar2 Case: Fully Isolated Molding TO-220FP /hexstar2 High surge current capability /hexstar2 Weight: 2.0 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant ITO-220AB Application /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS,Motor Control and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Latest FRED technology with soft recovery characteristics Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "DP" Suffix "DD" Suffix "DS"Suffix "DN" Page 1/3Rev.07 .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Unit : inch (mm) ABSOLUTE MAXIMUM RATINGS T C

ELECTRICAL CHARACTERISTICS

T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 600 V V Maximum Repetitive Reverse Voltage RRM 600 V I Average Forward Current F(AV) T C 8 =110°C, Per Diode A T C 16 =110°C, Per Package A I RMS Forward Current F(RMS) T C 12 =110°C, Per Diode A I Non-Repetitive Surge Forward Current FSM T J 100 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 50 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 2.5 °C /W Weight 2.1 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R -- =600V -- 15 µA V R =600V, T J V Forward Voltage F I F -- =8A 1.8 2.4 V I F =8A, T J -- =125°C 1.4 -- V t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 17 -- ns t Reverse Recovery Time rr V R =300V, I F =8A di F /dt=-200A/μs, T J =25°C 30 -- ns I Max. Reverse Recovery Current RRM -- 2.3 -- A t Reverse Recovery Time rr V R =300V, I F =8A di F /dt=-200A/μs, T J =125°C 60 -- ns I Max. Reverse Recovery Current RRM -- 4.8 -- A

Page 2/3Rev.07 I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C 0 0.5 1.0 2.0 2.5 3.0 di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 t rr (ns) 100 V R =300V T J =125°C I F =16A I F =4A I F =8A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 100 Q rr (nc) 200 300 400 V R =300V T J =125°C I F =16A I F =4A I F =8A V R =300V T J =125°C I F =16A I F =8A I F =4A K f Duty 0.5 0.2 0.1 0.05 Single Pulse 0.2 0.4 1.2 0.6 Z thJC (K/W) 0.8 I RRM Q rr t rr T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 1.5 500

Page 3/3Rev.07 Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM