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UNISONIC TECHNOLOGIES CO., LTD F5N50 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-A90.B 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC F5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on- state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC F5N50 can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON) < 1.6Ω @ VGS=10V, ID=2.5A * 100% avalanche tested * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 F5N50L-TF3-T F5N50G-TF3-T TO-220F G D S Tube F5N50L-TN3-R F5N50G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING
UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw QW-R502-A90.B ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous I D 5 A Pulsed (Note 2) I DM 20 A Avalanche Current (Note 2) I AR 5 A Avalanche Energy Single Pulsed (Note 3) E AS 200 mJ Repetitive (Note 2) E AR 7.3 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F PD 38 W TO-252 54 W Junction Temperature T J +150 °C Storage Temperature T STG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 16mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F θJA 62.5 °C/W TO-252 110 °C/W Junction to Case TO-220F θJC 3.25 °C/W TO-252 2.13 °C/W
UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw QW-R502-A90.B ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D=250µA, VGS=0V 500 V Breakdown Voltage Temperature Coefficient △BVDSS △/T J Reference to 25°C, ID=250µA 0.5 V/°C Drain-Source Leakage Current I DSS VDS=500V, VGS=0V 1 µAVDS=400V, TC=125°C 10 Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse V GS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS=VGS, ID=250µA 1.5 3.5 V Static Drain-Source On-State Resistance R DS(ON) V GS=10V, ID=2.5A 1.25 1.6 Ω DYNAMIC PARAMETERS Input Capacitance C ISS VGS=0V, VDS=25V, f=1.0MHz 480 625 pF Output Capacitance C OSS 80 105 pF Reverse Transfer Capacitance C RSS 15 20 pF SWITCHING PARAMETERS Total Gate Charge Q G VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) 20 24 nC Gate to Source Charge Q GS 4 nC Gate to Drain Charge Q GD 5 nC Turn-ON Delay Time t D(ON) VDD=30V, ID=0.5A, RG=25Ω (Note 1, 2) 30 50 ns Rise Time t R 50 70 ns Turn-OFF Delay Time t D(OFF) 145 100 ns Fall-Time t F 70 105 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A Drain-Source Diode Forward Voltage VSD I S=5A, VGS=0V 1.4 V Reverse Recovery Time t rr IS=5A, VGS=0V, dIF/dt=50A/µs (Note 1) 120 ns Reverse Recovery Charge Q RR 0.15 μC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw QW-R502-A90.B TEST CIRCUITS AND WAVEFORMS 50kΩ 300nF DUT VDS 10V12V Charge QGS QGD QG VGS VGS 200nF Same Type as DUT 3mA G a t e C h a r g e T e s t C i r c u i t G a t e C h a r g e W a v e f o r m s Resistive Switching Test Circuit Resistive Switching Waveforms 10V tP RG DUT L VDS ID VDD tP VDD IAS BVDSS ID(t) VDS(t) Time EAS= 2
1 LIAS
2 BVDSS
Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw QW-R502-A90.B TEST CIRCUITS AND WAVEFORMS(Cont.) VDS DUT RG dv/dt controlled by RG ISD controlled by pulse period VDD Same Type as DUT ISD VGS L Driver Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) ISD (DUT) VDS (DUT) D= Gate Pulse Width Gate Pulse Period 10V di/dt Body Diode Reverse Current IRM Body Diode Recovery dv/dt VDDVSD Body Diode Forward Voltage Drop IFM, Body Diode Forward Current
UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw QW-R502-A90.B TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS (V) 0.50 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 1.5 21 100 150 200 250 300 0 100 300 500 600200 100 150 200 250 300 400 2.5 Drain Current, ID (A) Coutinuous Drain-Soarce Current, ISD (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.