F5G1 QT | Alldatasheet
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QT! AlGaAs INFRARED EMITTING DIODE OPTOELECTROMICS F5G1 PACKAGE DIMENSIONS DESCRIPTION ay The F5G1 is an 880nm LED encapsulated in a clear, wide 4h | by im angle, sidelooker package. et —t Green A by ¥ — 6e- + Color ¢> + Code SECTION x-x & LEAD PROFILE rs 1] ‘ | [rearunes | 4 : i i 1 ‘SEATING H '™ Good optical to mechanical alignment PLANE = Mechanically and wavelength matched to the L14Q. x{Ix series phototransistor L = Plastic package with a color stripe for easy recognition from phototransistor | = High irradiance level e S| t 2 ‘ST1334 win. [ max. [ MIN. [ MAX. [8 | 178 [Nom [070 [Nom | 2 | [| si [wom | 020 [wom [1 | [~e [se [69 | oes Toa || [c T1968 [Wow [ore [wom [| [1 [rez [ — [soo f — [| PACKAGE OUTLINE 2 a 1 ANODE’ ‘CATHODE sti604 NOTES: 1. TWO LEADS. LEAD CROSS SECTION DIMENSIONS UNCONTROLLED WITHIN 1.27 mm (.050") OF ‘SEATING PLANE. 2. CENTERLINE OF ACTIVE ELEMENT LOCATED WITHIN .25 mm (.010") OF TRUE POSITION. 3. AS MEASURED AT THE SEATING PLANE. 4. INCH DIMENSIONS DERIVED FROM MILLIMETERS.
[ou AlGaAs INFRARED EMITTING DIODE OPTOELECTRONICS ee mmm ABSOLUTE MAXIMUM RATINGS (T, = 25°C Unless Otherwise Specified) Soldering: Lead Temperature (Iron) bebe bbeeeeeeeeeeeeeees seseeeees 240°C for 5 sec.2949 Lead Temperature (Flow) ee rrr 260°C for 10 sec.2** ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) Forward Voltage Ve - 17 v l= 20mA Reverse Breakdown Voltage Va 6.0 — Vv I, = 10 pA Reverse Leakage Current |e _ 10 BA Va=5V Radiant Intensity le 06 _ mWi/sr |, = 20 mA" 1. Derate power dissipation linearly 1.33 mW/°C above 25°C ambient. 2. RMA flux is recommended. 3. Methanol or Isopranol alcohols are recommended as cleaning agents. 4. Soldering iron tip ‘4e" (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. le measured with a 0.45 cm aperture placed 1.6 cm from the tip of the lens on the lens centerline perpendicular to the plane of the leads.
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