F5F1 QT | Alldatasheet
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foul GaAs INFRARED EMITTING DIODE OPTOELECTRONICS Smee PACKAGE DIMENSIONS DESCRIPTION EL The FSF1 is a 940nm LED encapsulated in a clear, wide i 4 b kK angle, sidelooker package. —< i ert Black by) Color gp. + -de Code SECTION X-X Yq LEAD PROFILE du SEATING = Good optical to mechanical alignment PLANE ™ Mechanically and wavelength matched to the L14Q series phototransistor c Uxy* = Plastic package with a color stripe for easy recognition from phototransistor J = High irradiance level e Ss ' 2 ‘811334 Lae a tea SOEs] symeo1| NoTES [smo ee Da | [ ov [so [75 | 2a | 030 | 1 | [e | 241 [267 [095 | 10s [3 | [G98 [Nom [ore [Nom [| [tfr27 | — [sof — [| (sss [96 [033 T 037 [3 | PACKAGE OUTLINE 2 1 wed CATHODE sti6oa NOTES: 1. TWO LEADS. LEAD CROSS SECTION DIMENSIONS: UNCONTROLLED WITHIN 1.27 mm (.050") OF SEATING PLANE. 2. CENTERLINE OF ACTIVE ELEMENT LOCATED WITHIN .25 mm (.010") OF TRUE POSITION. 3. AS MEASURED AT THE SEATING PLANE. 4. INCH DIMENSIONS DERIVED FROM MILLIMETERS. 3149
fou GaAs INFRARED EMITTING DIODE OPTOELECTRONICS SS ABSOLUTE MAXIMUM RATINGS (7, = 25°C Unless Otherwise Specified) Soldering: Reverse Voltage 0.0... t etter ttt ttttttttttttttttttttttttttierereeeee, 6 Volts ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) Forward Voltage Ve =— 17 v | = 60mA Reverse Breakdown Voltage Va 6 _ Vv I, = 10 yA Reverse Leakage Current he = 10 BA Va=5V Peak Emission Wavelength Ae 940 nm |, = 100 mA Emission Angle at Power 8 +35 Degrees Radiant Intensity le 0.28 = mW/sr 1, = 20maA® 1. Derate power dissipation linearly 1.33 mW/°C above 25°C ambient. 2. RMA flux is recommended. 3. Methanol or Isopranol alcohols are recommended as cleaning agents. 4. Soldering iron tip “4s” (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. le measured with a 0.45 cm aperture placed 1.6 cm from the tip of the lens on the lens centerline perpendicular to the. plane of the leads.
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