F5D1 QT | Alldatasheet
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QT AlGaAs INFRARED EMITTING DIODE OPTOELECTRONICS EE eee The FSD series is 880nm LEDs in a narrow angle, T0-46 SEATING package. PLANE A L bh} By e 1 Ek a _— ¥ --)= op 91 Ty --(s) 4 +t o st1332 ™ Good optical to mechanical alignment Sno rowel = Mechanically and wavelength matched to TO-18 series, [ win. Tmax. | win. T MAX. | phototransistor [aT — [ass { — [ear [| i ee | ™ Hermetically sealed package [ ep” [209 | 200 [531 [see [| ™ High irradiance level [e | 10onom. ["25enow. [2 | [e | osonom. [1.27Nom [2 | a a a [jf ost [ove [79 Pt [| a | [ fo | — [asa [| («Tas [ass [ass [ass [3]
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(CONNECTED TO CASE) T1604 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021" (.533mm) MEASURED IN GAUGING PLANE .054” + .001" - .000 (137 + 025 — 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007” (778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.
foul AlGaAs INFRARED EMITTING DIODE OPTOELECTRONICS SSS ABSOLUTE MAXIMUM RATINGS (7, = 25°C Unless Otherwise Specified) Storage Temperature - eer Terre rer? bec cceeeeeeseeessees =65°C to +150°C Operating Temperature . eee eee . cece veeeeeeneeereeeees 65°C to +125°C Soldering: Reverse Voltage bees eenee . bo ccetueeeseteesesseeeteteeeeeteesseeserereesees SVOMS Power Dissipation (Tc = 25°C) ceseee eens voce eeeeveeeeeeeeeee covet eee ners 1.3.W® ELECTRICAL CHARACTERISTICS (1, = 25°C Unless Otherwise Specified) (All measurements made under pulse conditions.) 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or Isopranol alcohols are recommended as cleaning agents. 5. Soldering iron tip e” (1.6 mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Total power output, Po, is the total power radiated by the device into a solid angle of 27 steradians.
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