F5800 VBSEMI | Alldatasheet
Document overview
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Technical content
P-Channel 30-V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET
APPLICATIONS
Load Switch PRODUCT SUMMARY RDS(on) (ΩVDS (V) ) ID (A)a Qg (Typ.) 0.049 at VGS - 30 = - 10 V - 4.8 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 Notes: a. Based on T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDrain-Source Voltage DS - 30 VVGate-Source Voltage GS ± 20 TC Continuous Drain Current (TJ = 150 °C) = 25 °C ID - 4.8 TC A = 70 °C - 4.1 - 4.0TA = 25 °C b, c - 3.5b,TA = 70 °C c IPulsed Drain Current DM - 20 TC Continuous Source-Drain Diode Current = 25 °C IS - 2.5 - 1.67TA = 25 °C b, c TC Maximum Power Dissipation = 25 °C PD 3.0 TC W = 70 °C 2.0 2.0TA = 25 °C b, c 1.3TA = 70 °C b, c TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t ≤Maximum Junction-to-Ambientb, d 5 s RthJA 55 62.5 °C/WRMaximum Junction-to-Foot (Drain) Steady State thJF 34 41 TSOP-6 Top View 2.85 mm 3 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET F5800-VB g www.VBsemi.com
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS = 0 V, IDVDrain-Source Breakdown Voltage DS = - 250 µA - 30 V ΔVDS/TVDS Temperature Coefficient J ID = - 250 µA - 31 mV/°CΔVGS(th)/TVGS(th) Temperature Coefficient J 4.5 VGate-Source Threshold Voltage GS(th) VDS = VGS, ID = - 250 µA - 0.5 - 2.0 V IGate-Source Leakage GSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS IZero Gate Voltage Drain Current DSS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta VDS ≤ - 5 V, VGS ID(on) = - 10 V - 20 A Drain-Source On-State Resistancea VGS = - 10 V, ID RDS(on) = - 4.1 A 0.049 ΩVGS = - 4.5 V, ID = - 1.0 A 0.054 Forward Transconductancea VDS = - 15 V, ID gfs = - 4.1 A 8S Dynamicb CInput Capacitance iss VDS = - 15 V, VGS = 0 V, f = 1 MHz 450 C pFOutput Capacitance oss 80 CReverse Transfer Capacitance rss 63 Total Gate Charge VDS = - 15 V, VGS = - 10 V, ID Qg = - 4.1 A 10 15 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A 5.1 8 QGate-Source Charge gs 1.8 QGate-Drain Charge gd 2.5 RGate Resistance g f = 1 MHz 7 Ω tTurn-On Delay Time d(on) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 t ns Rise Time r 80 120 tTurn-Off Delay Time d(off) 20 30 tFall Time f 12 20 tTurn-On Delay Time d(on) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 51 0 tRise Time r 13 20 tTurn-Off Delay Time d(off) 20 30 tFall Time f 10 15 Drain-Source Body Diode Characteristics IContinuous Source-Drain Diode Current S TC = 25 °C - 2.5 A Pulse Diode Forward Currenta ISM - 20 VBody Diode Voltage SD IS = - 3.3 A - 0.8 - 1.2 V tBody Diode Reverse Recovery Time rr IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C 20 30 ns QBody Diode Reverse Recovery Charge rr 20 30 nC tReverse Recovery Fall Time a 14 nstReverse Recovery Rise Time b 6 g www.VBsemi.com F5800-VB
25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge ID - Drain Cu VDS - Drain-to-Source Voltage (V) rrent (A) VGS = 10 thru 5 V VGS = 3 V VGS = 4 V VGS = 2 V 0.040 0.045 0.050 0.055 0.060 0.065 04 8 12 16 20 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0246 8 10 12 ID = 4.1 A VGS - Gate-to-Source Voltage (V Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 012 34 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TC = 125 °C TC = 25 °C TC = - 55 °C Crss 200 400 600 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 RDS(on) TJ - Junction Temperature (°C) ormalized) - On-Resistance VGS = 10 V, ID = 4.1 V VGS = 4.5 V, ID = 4.1 A g R¡pí~¿ÿ400-655-8788 www.VBsemi.com F5800-VB
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C IS - Source Cu VSD - Source-to-Drain Voltage (V) rrent (A) 100 TJ = 25 °C 1.2 1.4 1.6 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 V (GS(th) V ID = 250 µA On-Resistance vs. TJ - Temperature (°C) Gate-to-Source Voltage Single Pulse Power 0.00 0.05 0.10 0.15 0.20 0.25 0246 8 10 VGS - Gate-to-Source Voltage (V RDS(on) - On-Resistance (Ω) TJ = 25 °C TJ = 125 °C ID = 4.1 A Power ( W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area * VGS VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified 100 0.1 1 10 100 ID - Drain Cu 0.01 rrent (A) 0.1 TA = 25 °C Single Pulse 1 ms 10 ms Limited by RDS(on)* BVDSS Limited 100 µs 100 ms DC 1s, 10 s g R¡pí~¿ÿ400-655-8788 www.VBsemi.com F5800-VB
25 °C, unless otherwise noted * The power dissipation P D is based on TJ(max) = 150 ° C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) g www.VBsemi.com F5800-VB
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 110 10 10 1000-1-4 100 0.2 0.1 0.05 Normalized Effectiv Square WaveP ulse Duration (s) e Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = t 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-210 10 101-1-4 0.2 0.1 Duty Cycle = 0.5 Normalized Effective T Square WaveP ulse Duration (s) ransient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 g R¡pí~¿ÿ400-655-8788 www.VBsemi.com F5800-VB
L 5 4 R R C 0.15 M B A b C 0.08
0.17 Ref
-C- ne A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part 6-LEAD TSOP Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 g R¡pí~¿ÿ400-655-8788 www.VBsemi.com F5800-VB
RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.028 0.064 (1.626)(0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) Return to Index g www.VBsemi.com F5800-VB
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