F540NS

IRF540NS_05 IRF | Alldatasheet

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HEXFET® Power MOSFET /G48/G55/G47/G48/G49/G47/G48/G53 www.irf.com 1 VDSS = 100V RDS(on) = 44mΩ ID = 33A S D G Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for low- profile applications. /G108Advanced Process Technology /G108Ultra Low On-Resistance /G108Dynamic dv/dt Rating /G108175°C Operating Temperature /G108Fast Switching /G108Fully Avalanche Rated

Description

Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V /G135 33 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V /G135 23 A IDM Pulsed Drain Current /G129/G135 110 PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 0.87 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current/G129 16 A EAR Repetitive Avalanche Energy/G129 13 mJ dv/dt Peak Diode Recovery dv/dt /G131/G135 7.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) D2Pak IRF540NS TO-262 IRF540NL Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.15 RθJA Junction-to-Ambient (PCB mount)** ––– 40 Thermal Resistance °C/W PD - 91342B

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)/G129 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V T J = 25°C, IS = 16A, VGS = 0V /G132 trr Reverse Recovery Time ––– 115 170 ns T J = 25°C, IF = 16A Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs /G132/G135 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 110 /G65 /G129/G32Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) /G130 Starting TJ = 25°C, L =1.5mH RG = 25Ω, IAS = 16A. (See Figure 12) /G131ISD ≤ 16A/G44/G32di/d/G116/G32≤/G32340A/µs, VDD/G32≤/G32V(BR)DSS, TJ ≤ 175°C /G132 Pulse width ≤ 400µs; duty cycle ≤ 2%. /G78/G111/G116/G101/G115/G58 /G133 This is a typical value at device destruction and represents operation outside rated limits. /G134 This is a calculated value limited to T J = 175°C . /G135Uses IRF540N data and test conditions. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA /G135 RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 m Ω VGS = 10V, ID = 16A/G32/G132 VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS, ID = 250µA gfs Forward Transconductance 21 ––– ––– S V DS = 50V, ID = 16A/G132/G135 ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 V DS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 71 I D = 16A Qgs Gate-to-Source Charge ––– ––– 14 nC V DS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 V GS = 10V, See Fig. 6 and 13/G32/G132/G135 td(on) Turn-On Delay Time ––– 11 ––– V DD = 50V tr Rise Time ––– 35 ––– I D = 16A td(off) Turn-Off Delay Time ––– 39 ––– R G = 5.1Ω tf Fall Time ––– 35 ––– V GS = 10V, See Fig. 10 /G132/G135 Between lead,––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 1960 ––– V GS = 0V Coss Output Capacitance ––– 250 ––– V DS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz, See Fig. 5 /G135 EAS Single Pulse Avalanche Energy /G130/G135––– 700 /G133185/G134mJ I AS = 16A, L = 1.5mH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns /G52/G46/G53 /G55/G46/G53 IDSS Drain-to-Source Leakage Current

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 33A 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 0.1 1 10 100 20µs PULSE WIDTH T = 175 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.5V 100 1000 V = 50V 20µs PULSE WIDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 175 CJ °

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 500 1000 1500 2000 2500 3000 V , Drain-to-Source Voltage (V) C, Capacitance (pF) DS V C C C 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 20 40 60 80 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUIT SEE FIGURE I =D 16A V = 20VDS V = 50VDS V = 80VDS 0.1 100 1000 V ,Source-to-Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 175 CJ ° 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) TA = 25°C TJ = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature VDS 90% 10% VGS td(on) tr td(off) tf /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G86/G71/G83 -/G86/G68/G68 /G70/G105/G103/G32/G49/G48/G97/G46/G32/G32/G83/G119/G105/G116/G99/G104/G105/G110/G103/G32/G84/G105/G109/G101/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 /G70/G105/G103/G32/G49/G48/G98/G46/G32/G32/G83/G119/G105/G116/G99/G104/G105/G110/G103/G32/G84/G105/G109/G101/G32/G87/G97/G118/G101/G102/G111/G114/G109/G115 25 50 75 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) D 0.01 0.1 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE)

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 6 www.irf.com QG QGS QGD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G86/G71/G83 /G70/G105/G103/G32/G49/G51/G98/G46/G32/G32/G71/G97/G116/G101/G32/G67/G104/G97/G114/G103/G101/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116/G70/G105/G103/G32/G49/G51/G97/G46/G32/G32/G66/G97/G115/G105/G99/G32/G71/G97/G116/G101/G32/G67/G104/G97/G114/G103/G101/G32/G87/G97/G118/G101/G102/G111/G114/G109 /G70/G105/G103/G32/G49/G50/G98/G46/G32/G32/G85/G110/G99/G108/G97/G109/G112/G101/G100/G32/G73/G110/G100/G117/G99/G116/G105/G118/G101/G32/G87/G97/G118/G101/G102/G111/G114/G109/G115 /G70/G105/G103/G32/G49/G50/G97/G46/G32/G32/G85/G110/G99/G108/G97/G109/G112/G101/G100/G32/G73/G110/G100/G117/G99/G116/G105/G118/G101/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 tp V(BR)DSS IAS /G70/G105/G103/G32/G49/G50/G99/G46/G32/G32/G77/G97/G120/G105/G109/G117/G109/G32/G65/G118/G97/G108/G97/G110/G99/G104/G101/G32/G69/G110/G101/G114/G103/G121 /G86/G115/G46/G32/G68/G114/G97/G105/G110/G32/G67/G117/G114/G114/G101/G110/G116 RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V 25 50 75 100 125 150 175 100 200 300 400 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 6.5A 11.3A 16A

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 www.irf.com 7 /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period /G131 /G132/G130 /G82/G71 /G86/G68/G68

• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
• /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
• /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84/G42 /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115
• /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 /G129 /G42/G32/G32/G82/G101/G118/G101/G114/G115/G101/G32/G80/G111/G108/G97/G114/G105/G116/G121/G32/G111/G102/G32/G68/G46/G85/G46/G84/G32/G102/G111/G114/G32/G80/G45/G67/G104/G97/G110/G110/G101/G108 /G86/G71/G83 /G91/G32/G32/G32/G32/G93 /G91/G32/G32/G32/G32/G93 /G42/G42/G42/G32/G86/G71/G83/G32/G61/G32/G53/G46/G48/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G97/G110/G100/G32/G51/G86/G32/G68/G114/G105/G118/G101/G32/G68/G101/G118/G105/G99/G101/G115 /G91/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G93/G32/G42/G42/G42 /G70/G105/G103/G32/G49/G52/G46/G32For N-channel/G32HEXFET® power MOSFETs

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 8 www.irf.com /G68/G50/G80/G97/G107/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 /G68/G50/G80/G97/G107/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 /G68/G105/G109/G101/G110/G115/G105/G111/G110/G115/G32/G97/G114/G101/G32/G115/G104/G111/G119/G110/G32/G105/G110/G32/G109/G105/G108/G108/G105/G109/G101/G116/G101/G114/G115/G32/G40/G105/G110/G99/G104/G101/G115/G41 /c39/c36 /c55 /c40/c3/c38/c50 /c39 /c40 /c60/c40/c36/c53 /c3/c19/c3/c32 /c3/c21 /c19/c19/c19 /c58/c40/c40 /c46/c3/c19 /c21 /c36 /c3 /c32/c3/c36/c54 /c54/c40/c48 /c37/c47/c60/c3/c54 /c44/c55/c40 /c3/c38/c50/c39/c40 /c53 /c40/c38/c55 /c44/c41/c44 /c40/c53 /c44/c49/c55/c40 /c53/c49/c36/c55/c44 /c50/c49/c36/c47 /c51/c36/c53/c55 /c3/c49/c56/c48/c37/c40 /c53 /c51/c3/c32 /c3/c39/c40/c54 /c44/c42 /c49/c36 /c55 /c40/c54 /c3/c47/c40/c36/c39/c3/c16/c3/c41/c53 /c40/c40 /c51 /c53/c50 /c39/c56 /c38/c55 /c3/c11 /c50 /c51/c55 /c44/c50/c49/c36/c47/c12 /c41 /c24/c22/c19 /c54 /c44 /c49/c3/c55/c43 /c40/c3/c36/c54/c54 /c40/c48/c37 /c47/c60/c3/c47/c44/c49/c40 /c3/c5/c47/c5 /c36/c54/c54 /c40/c48/c37 /c47/c40/c39/c3/c50 /c49/c3/c58/c58 /c3/c19/c21/c15 /c3/c21/c19/c19 /c19 /c55/c43/c44/c54 /c3/c44 /c54/c3/c36/c49/c3/c44 /c53/c41 /c24/c22/c19 /c54/c3/c58/c44 /c55/c43 /c47/c50 /c55/c3 /c38 /c50 /c39/c40/c3/c27/c19/c21/c23 /c44/c49/c55 /c40/c53 /c49/c36 /c55 /c44/c50 /c49/c36 /c47 /c47/c50 /c42/c50 /c53/c40 /c38 /c55 /c44/c41 /c44/c40/c53 /c47/c50/c55 /c3/c38/c50/c39/c40 /c36/c54/c54/c40 /c48/c37/c47/c60 /c60/c40 /c36 /c53 /c3/c19 /c3/c32/c3 /c21/c19/c19 /c19 /c51 /c36 /c53 /c55/c3/c49/c56/c48/c37 /c40/c53 /c39/c36/c55/c40 /c3/c38/c50/c39/c40 /c47/c44 /c49/c40/c3/c47 /c58/c40 /c40/c46 /c3/c19/c21 /c50/c53 /c41/c24 /c22/c19/c54 /c47/c50 /c42/c50 /c36 /c54 /c54/c40/c48/c37 /c47/c60 /c47/c50/c55 /c3/c38/c50/c39/c40

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 www.irf.com 9 TO-262 Part Marking Information Dimensions are shown in millimeters (inches) /c36/c54/c54/c40/c48 /c37 /c47 /c60 /c47/c50/c55 /c3 /c38 /c50 /c39/c40 /c53 /c40 /c38 /c55 /c44/c41 /c44/c40 /c53 /c44/c49 /c55 /c40 /c53 /c49 /c36 /c55 /c44 /c50 /c49 /c36 /c47/c36 /c54/c54/c40/c48/c37/c47 /c40/c39/c3 /c50/c49/c3 /c58/c58 /c3 /c20/c28/c15 /c3 /c20 /c28/c28/c26 /c49 /c82 /c87/c72 /c29 /c3/c5 /c51 /c5/c3/c76 /c81 /c3/c68 /c86 /c86 /c72 /c80 /c69/c79/c92/c3/c79/c76/c81 /c72 /c83 /c82/c86/c76 /c87/c76 /c82/c81/c3 /c76 /c81/c71/c76 /c70/c68 /c87/c72/c86/c3 /c5/c47/c72/c68/c71/c16/c41/c85/c72/c72/c5 /c44 /c49 /c3 /c55 /c43/c40/c3 /c36/c54/c54/c40/c48 /c37/c47/c60/c3 /c47/c44 /c49/c40/c3 /c5 /c38/c5 /c47/c50 /c42/c50 /c55 /c43/c44 /c54/c3 /c44 /c54/c3 /c36/c49/c3 /c44 /c53/c47/c22 /c20/c19/c22 /c47 /c47 /c50/c55/c3 /c38/c50 /c39/c40/c3 /c20 /c26/c27/c28 /c40/c59/c36/c48 /c51/c47/c40/c29 /c47/c44 /c49/c40/c3 /c38 /c39/c36/c55 /c40/c3 /c38/c50 /c39 /c40 /c58/c40/c40/c46/c3 /c20/c28 /c60 /c40 /c36 /c53 /c3/c26 /c3 /c32 /c3/c20/c28 /c28/c26 /c51/c36/c53/c55 /c3 /c49/c56/c48 /c37/c40 /c53 /c51/c36/c53/c55 /c3 /c49/c56/c48 /c37/c40 /c53 /c47 /c50/c42/c50 /c47/c50 /c55/c3 /c38/c50/c39/c40 /c36/c54/c54/c40/c48 /c37/c47/c60 /c44/c49 /c55 /c40 /c53 /c49 /c36 /c55 /c44 /c50 /c49 /c36 /c47 /c53 /c40 /c38 /c55 /c44/c41 /c44/c40 /c53 /c51/c53/c50/c39/c56/c38/c55 /c3 /c11 /c50/c51/c55/c44 /c50/c49/c36/c47 /c12 /c51/c3 /c32/c3 /c39/c40/c54/c44 /c42/c49 /c36/c55/c40/c54/c3 /c47/c40/c36/c39/c16 /c41/c53/c40/c40 /c36 /c3 /c32/c3 /c36 /c54/c54/c40/c48 /c37 /c47 /c60/c3 /c54 /c44 /c55 /c40 /c3 /c38/c50/c39/c40 /c58 /c40/c40/c46/c3 /c20/c28 /c60 /c40/c36/c53/c3 /c26/c3 /c32 /c3 /c20/c28/c28/c26 /c39/c36 /c55 /c40 /c3 /c38 /c50 /c39 /c40 OR

/G73/G82/G70/G53/G52/G48/G78/G83/G47/G73/G82/G70/G53/G52/G48/G78/G76 10 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .07/05 /G68/G50/G80/G97/G107/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.