F5305S VBSEMI | Alldatasheet
Document overview
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Technical content
P-Channel 60 V (D-S) MOSFET
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
P o we r S w i t c h Load Switch in High Current Applications DC/DC Converters Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) R DS(on) () Max. I D (A) Qg (Typ.) 0.048at VGS = - 10 - 60 V - 35 600.060at VGS = - 4.5 V - 30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VDrain-Source Voltage DS - 60 VVGate-Source Voltage GS ± 20 TCContinuous Drain Current (TJ = 150 °C) = 25 °C ID - 35 TC = 70 ° A C - 30 IPulsed Drain Current (t = 300 µs) DM - 100 IAvalanche Current AS - 32 Single Avalanche Energya EL = 0.1 mH AS 51 mJ TC Maximum Power Dissipationa = 25 °C 61PD b W TA = 25 °Cc 6.1 TJ, TOperating Junction and Storage Temperature Range stg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 60 °C/WRJunction-to-Case (Drain) thJC 3 S G D P-Channel MOSFET D2PAK (TO-263) G D S F5305S-VB www.VBsemi.com g
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS = 0 V, IDVDrain-Source Breakdown Voltage DS = - 250 µA - 60 VVGS(tGate Threshold Voltage h) VDS = VGS, ID = - 250 µA - 2.- 1 5 IGate-Body Leakage GSS VDS = 0 V, VGS = ± 20 V ± 250 nA VDS = - 60 V, VGS IZero Gate Voltage Drain Current DSS = 0 V - 1 VDS = - 60 V, VGS = 0 V, TJ µA= 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 250 On-State Drain Currenta VDS - 10 V, VGS ID(on) = - 10 V - 30 A Drain-Source On-State Resistancea VGS = - 10 V, ID RDS(on) = - 14 A 0.048 VGS = - 4.5 V, ID = - 12 A 0.060 Forward Transconductancea VDS = - 20 V, ID gfs = - 14 A 40 S Dynamicb CInput Capacitance iss VGS = 0 V, VDS = - 30 V, f = 1 MHz 1650 C pFOutput Capacitance oss 200 CReverse Transfer Capacitance rss 120 Total Gate Chargec Qg VDS = - 30V , VGS = - 10 V, ID = - 14 A Gate-Source Charge nCc Qgs 13.5 Gate-Drain Chargec Qgd 14 RGate Resistance g 0.f = 1 MHz 5 2.5 5 Tur n-On Delay Timec td(on) 10 2 VDD = - 30 V, RL = 2 ID - 10 A, VGEN = - 10 V, Rg = 1 Rise Time ns c tr 11 2 0 Turn-Off Delay Timec td(off) 42 6 3 Fall Timec tf 12 2 0 Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb IContinuous Current S - 35 AIPulsed Current SM - 100 Forward Voltagea VSD IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V tReverse Recovery Time rr 3 IF = - 10 A, dI/dt = 100 A/µs 8 57 ns IPeak Reverse Recovery Current RM(REC) 2.3 3.5 A QReverse Recovery Charge rr 40 6 0 nC F5305S-VB www.VBsemi.com g
(25 °C, unless otherwise noted) Output Characteristics Transfer Characteristics Transconductance 0 0.5 1 1.5 - DrI D ain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.2 0.4 0.6 0.8 1.0 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 6 gfs 12 18 24 30 - Transconductance (S) ID - Drain Current (A) TC = 125 °C On-Res TC = - 55 °C TC = 25 °C istance vs. Drain Current On-Resistance vs. Gate-to-Source Voltage Gate Charge 0.000 0.020 0.040 0.060 0.080 0.100 0 2 04 06 08 0 1 0 0 ID - Drain Current RDS(on) - On-Resistance (Ω) (A) VGS = 4.5 V VGS = 10 V 0.010 0.016 0.022 0.028 0.034 0.040 ID - Drain Current (A) RDS(on) - On 2468 1 0 -Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 14 A VGS - Gate- 0 1 42 84 25 67 0 to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 48 V VDS =25 V VDS = 30 V ID = 14 A F5305S-VB www.VBsemi.com g 1 2 3 4 5
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Capacitance On-Resistance vs. Junction Temperature 0.1 100IS - Source C urrent (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 400 800 1200 1600 2000 C - Capacitance 0 1 02 03 04 0 (pF) C VDS - Drain-to-Source Voltage (V) iss Coss Crss 0.7 1.0 1.3 1.6 1.9 2.2 RDS(on) -O n- - 50 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 R e s i s t a n c e(Normalized) TJ - Junction Temperature (°C) ID = 14 A VGS = 10 V VGS = 4.5 V Threshold Voltage Current Derating 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 VGS(th) TJ -T emp e r a t u r e (° (V) ID = 250 μA - 50 - 25 0 25 VDS (V) Drai 50 75 100 125 150 n-to-Source Voltage TJ -T emp e r a t u r e (°C) Drain Source Breakdown vs. Junction Temperature ID = 250 μA 0 25 50 75 ID 100 125 150 - Drain Current (A) TC - Case Temperature (°C) F5305S-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) Single Pulse Avalanche Current Capability vs. Time 100 0.000001 0.00001 0.0001 I 0.001 0.01 0.1 DAV (A) Time (s) TJ = 25 °C TJ = 150 °C Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) ID - Drain Current (A) is specified DC, 1 s, 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs Normalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 10-4 10-3 10-2 Normalized Eff 10-1 Square Wave Pulse Dur 11 0 ation (s) ective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse F5305S-VB www.VBsemi.com g
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) F5305S-VB www.VBsemi.com g
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