F50UP30DN THINKISEMI | Alldatasheet

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Technical content

T C =25°C unless otherwise specified

ELECTRICAL CHARACTERISTICS

T C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V R Maximum D.C. Reverse Voltage 300 V V RRM Maximum Repetitive Re verse Voltage 300 V I F(AV) Average Forward Current T C =110°C, Per Diode 30 A T C =110°C, Per Package 60 A I F(RMS) RMS Forward Current T C =110°C, Per Diode 42 A I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 480 A P D Power Dissipation 156 W T J Junction Temperature -55to +150 °C T STG Storage Temperature Range -55 to +150 °C Torque Module-to-Sink Recommended （M3） 1.1 N·m R th(J-C) Thermal Resistance Junction-to-Case, Per Diode 0.8 °C /W Weight 6 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I RM Reverse Leakage Current V R =300V -- -- 10 µA V R =300V, T J =125°C -- -- 10 mA V F Forward Voltage I F =30A -- 1.25 1.8 V I F =30A, T J t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 22 -- ns t rr Reverse Recovery Time V R =150V, I F =30A di F /dt=-200A/μs, T J =25°C -- 35 -- ns I RRM Max. Reverse Recovery Current -- 2.5 -- A t rr Reverse Recovery Time V R =150V, I F =30A di F /dt=-200A/μs, T J =125°C -- 70 -- ns I RRM Max. Reverse Recovery Current -- 6.8 -- A F50UP30DN Pb Free Plating Product F50UP30DN

50.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE F50UP30DN using matured FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05 TO-3PB/TO-3PN Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside Anode

I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000800 600 40020000 t r r (ns) 100 V R =150V T J =125°C I F =60 A I F =15 A I F =30 A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000800 600 40020000 100 Q r r (nc) 400 500 600 V R =150V T J =125°C I F =60A I F =15A I F =30 A V R =150V T J =125°C I F =60A I F =30 A I F =15A K f 0.2 0.4 1.2 0.6 Z thJC K/W 0.8 I RRM Q r r t r r T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 0.9 200 300 Duty 0.5 0.2 0.1 0.05 Single Pulse F50UP30DN © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05

Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM Dimensions in Millimeters Fig8. Package Outline F50UP30DN © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05