F50N06E GWSEMI | Alldatasheet

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Technical content

Features

 VDS=60V, ID=5A  RDS(ON)=35mΩ@VGS=10V(Typ.)  RDS(ON)=39mΩ@VGS=4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package G S Schematic diagram Main Applications  Battery Protection  Load Switch  Power Management SOT-223 Top View N-Channel Enhancement MOSFET F50N06E

Electrical Characteristics (T Ambient =25º C unless noted otherwise) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production N-Channel Enhancement MOSFET F50N06E Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS V, I D =250μA Volt I DSS Zero Gate Voltage Drain Current V DS V, V GS =0V μ A I GSS Gate Body Leakage Current V GS V, V DS =0V n A On Characteristics(Note 3) V GS(th) Gate Threshold Voltage V DS = V GS , I D =250μA Volt R DS(ON) Drain Source On State Resistance V GS V, I D A m Ω V GS 4.5 V, I D A mΩ Dynamic Characteristics(Note 4) C iss Input Capacitance V D D V V GS =0V , F =1MHz pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance pF Switching Characteristics(Note 4) td(on) Tu rn on Delay Time V DD V, V G S R GEN Ω nS tr Turn on Rise Time nS td(off) Turn Off Delay Time nS tf Turn Off Fall Time nS Q g Total Gate Charge V D S V, I D A V GS V nC Q g s Gate Source Charge 5.4 nC Q g d Gate Dra in Charge 6.5 nC Drain Source Diode Characteristics V SD Diode Forward Voltage (Note 3) V GS =0V, I S A V I S Diode Forward Current (Note 2) A

Typical Electrical and Thermal Characteristics N-Channel Enhancement MOSFET F50N06E

N-Channel Enhancement MOSFET F50N06E

Min. Max. Min. Max. A A1 0.000 0.100 0.000 0.004 A2 1.500 1.700 0.059 0.067 b 0.660 0.820 0.026 0.032 c 0.250 0.350 0.010 0.014 D 6.200 6.400 0.244 0.252 E 3.300 3.700 0.130 0.146 E1 6.830 7.070 0.269 0.278 e Symbol Dimensions In Millimeters Dimensions In Inches 2.300(BSC) 0.091(BSC) Plastic surface mounted package; 3 leads SOT-223 PACKAGE OUTLINE D E b e θ 0° 10° 0° 10° 1.520 1.800 0.060 0.071 2.900 3.100 0.114 0.122 4.500 4.700 0.177 0.185 L 0.900 1.150 0.035 0.045 N-Channel Enhancement MOSFET F50N06E