STD3NK80Z-1_V01 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 29
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 IPAK (TO-251) type A package information
- 4.2 DPAK package information
- 4.2.1 DPAK (TO-252) type A package information
- 4.2.2 DPAK (TO-252) type C2 package information
- 4.2.3 DPAK (TO-252) type E package information
- 4.2.4 DPAK (TO-252) packing information
- 4.3 TO-220FP package information
- 4.4 TO-220 package information
- 4.4.1 TO-220 type A package information
- 4.4.2 TO-220 type H package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID STD3NK80Z-1 800 V 4.5 Ω 2.5 A STD3NK80ZT4 800 V 4.5 Ω 2.5 A STF3NK80Z 800 V 4.5 Ω 2.5 A STP3NK80Z 800 V 4.5 Ω 2.5 A Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected
Applications
Switching applications
Description
These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including the revolutionary MDmesh™ products. Table 1: Device summary Order code Marking Package Packaging STD3NK80Z-1 D3NK80Z IPAK Tube STD3NK80ZT4 D3NK80Z DPAK Tape and reel STF3NK80Z F3NK80Z TO-220FP Tube STP3NK80Z P3NK80Z TO-220 Tube
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Electrical ratings
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit TO-220, DPAK, IPAK TO-220FP VDS Drain-source voltage 800 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 2.5 2.5(1) A Drain current (continuous) at TC = 100 °C 1.57 1.57(1) A IDM(2) Drain current (pulsed) 10 10(1) A PTOT Total dissipation at TC = 25 °C 70 25 W ESD Gate-source, human body model, R = 1.5 kΩ, C = 100 pF 2 kV dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Tj Operation junction temperature range Notes: (1)This value is limited by package. (2)Pulse width is limited by safe operating area. (3)ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS(peak) < V(BR)DSS, VDD = 640 V Table 3: Thermal data Symbol Parameter Value Unit TO-220 TO-220FP DPAK IPAK Rthj-case Thermal resistance junction-case 1.78 5 1.78 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 100 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 50 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) 2.5 A EAS Single pulse avalanche energy (starting TJ =25 °C, ID = IAR, VDD= 50 V) 170 mJ
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 800 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 800 V 1 µA VGS = 0 V, VDS = 800 V, TC = 125 °C(1) 50 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 1.25 A 3.8 4.5 Ω Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz - 485 - pF Coss Output capacitance - 57 - pF Crss Reverse transfer capacitance - 11 - pF Coss eq(1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 640 V - 22 - pF Qg Total gate charge VDD = 640 V, ID = 2.5 A, VGS = 0 to 10 V (see Figure 17: "Test circuit for gate charge behavior") - 19 - nC Qgs Gate-source charge - 3.2 - nC Qgd Gate-drain charge - 10.8 - nC Notes: (1)Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 1.25 A, RG = 4.7 Ω, VGS =10 V (see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform") - 17 - ns tr Rise time - 27 - ns td(off) Turn-off delay time - 36 - ns tf Fall time - 40 - ns
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
Electrical characteristics
Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 2.5 A ISDM(1) Source-drain current (pulsed) 10 A VSD(2) Forward on voltage ISD = 2.5 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs VDD = 50 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 384 ns Qrr Reverse recovery charge - 1.6 μC IRRM Reverse recovery current - 8.4 A trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, VDD = 50 V , TJ = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 474 ns Qrr Reverse recovery charge - 2.1 μC IRRM Reverse recovery current - 8.8 A Notes: (1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%. (2)Pulse width is limited by safe operating area. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA (open drain) 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area for TO-220, DPAK, IPAK Figure 3: Thermal impedance for TO-220, DPAK, IPAK Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Output characteristics Figure 7: Transfer characteristics CG20930 tp Zth = k Rthj-C δ = tp / Ƭ 10-5 10-4 10-3 10-2 10-2 10-1 K 10-1 tp(s) Ƭ δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.01 δ = 0.02 δ = 0.05 SINGLE PULSE Zth = k Rthj-C δ = tp / Ƭ tp Ƭ
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Test circuits
3 Test circuits
Figure 16: Test circuit for resistive load switching times Figure 17: Test circuit for gate charge behavior Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform Figure 21: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 IPAK (TO-251) type A package information
Figure 22: IPAK (TO-251) type A package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
Package information
Table 10: IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 0.95 b4 5.20 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 0.80 1.00 10°
4.2 DPAK package information
4.2.1 DPAK (TO-252) type A package information
Figure 23: DPAK (TO-252) type A package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Table 11: DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 6.60 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L2 0.65 0.80 0.95 L4 0.60 1.00 R 0.20 V2 0°
Figure 24: DPAK (TO-252) type A recommended footprint (dimensions are in mm)
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z
4.2.2 DPAK (TO-252) type C2 package information
Figure 25: DPAK (TO-252) type C2 package outline 0068772_C2_22
Table 12: DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 5.33 5.46 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.10 5.60 E 6.50 6.60 6.70 E1 5.20 5.50 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 2.90 REF L2 0.90 1.25 L3 0.51 BSC L4 0.60 0.80 1.00 L6 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0°
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Figure 26: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm) FP_0068772_22
4.2.3 DPAK (TO-252) type E package information
Figure 27: DPAK (TO-252) type E package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Table 13: DPAK (TO-252) type E mechanical data Dim. mm Min. Typ. Max. A 2.18 2.39 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 6.73 E1 4.32 e 2.286 4.572 H 9.94 10.34 L 1.50 1.78 2.74 L2 0.89 1.27 1.02 Figure 28: DPAK (TO-252) type E recommended footprint (dimensions are in mm)
4.2.4 DPAK (TO-252) packing information
Figure 29: DPAK (TO-252) tape outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Figure 30: DPAK (TO-252) reel outline Table 14: DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3
4.3 TO-220FP package information
Figure 31: TO-220FP package outline 7012510_Rev_12_B
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Table 15: TO-220FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
4.4 TO-220 package information
4.4.1 TO-220 type A package information
Figure 32: TO-220 type A package outline
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Table 16: TO-220 type A mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95
4.4.2 TO-220 type H package information
Figure 33: TO-220 type H package outline 0015988_H_21
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z Table 17: TO-220 type H package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.45 4.50 A1 1.22 1.32 A2 2.49 2.59 2.69 A3 1.17 1.27 1.37 b 0.78 0.87 b2 1.25 1.34 b4 1.20 1.29 1.50 1.45 c 0.49 0.56 D 15.40 15.50 15.60 D1 9.05 9.15 9.25 E 10.08 10.18 10.28 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 H1 6.25 6.35 6.45 L 13.20 13.40 13.60 L1 3.50 3.70 3.90 L2 16.30 16.40 16.50 L3 28.70 28.90 29.10 ∅P 3.75 3.80 3.85 Q 2.70 2.80 2.90
5 Revision history
Table 18: Document revision history Date Revision Changes 09-Sep-2004 3 Complete document 10-Aug-2006 4 New template, no content change 26-Feb-2009 5 Updated mechanical data 07-Sep-2009 6 VESD(G-S) value has been corrected 06-Apr-2017 7 Updated Section 1: "Electrical ratings", Section 2: "Electrical characteristics" and Section 4: "Package information". Minor text changes