F3L340R12W3H7H11BPSA1 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 24
Technical content
Features
- Electrical features - V CES = 1200 V - I C nom = 340 A / ICRM = 680 A - Ultra fast IGBT chips - Low inductive design - Low switching losses - Low V CE,sat - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder
- Mechanical features - 3.2 kV AC 1 minute insulation - Al 2O3 substrate with low thermal resistance - High current pin - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications
- Three-level applications
- Solar applications Product validation
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
W00213783.03 F3L340R12W3H7_H11 EasyPACK™ module Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 www.infineon.com 2024-12-04
F3L340R12W3H7_H11 EasyPACK™ module Table of contents Datasheet 2 Revision 1.00 2024-12-04
1 Package
Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 3.2 kV Isolation test voltage NTC VISOL(NTC) RMS, f = 50 Hz, t = 1 min 3.2 kV Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Comparative tracking index CTI > 400 Relative thermal index (electrical) RTI 140 °C Table 2 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Stray inductance module LsCE 18 nH Module lead resistance, terminals - chip RAA'+CC' TH = 25 °C, per switch 1.4 mΩ Module lead resistance, terminals - chip RCC'+EE' TH = 25 °C, per switch 1.2 mΩ Storage temperature Tstg -40 125 °C Mounting torque for module mounting M - Mounting according to valid application note M5, Screw 1.3 1.5 Nm Weight G 78 g Note: The current under continuous operation is limited to 50 A rms per connector pin.
2 IGBT , T1 / T4
Table 3 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Implemented collector current ICN 340 A Continuous DC collector current ICDC Tvj max = 175 °C TH = 65 °C 225 A Repetitive peak collector current ICRM tp limited by Tvj op 680 A Gate-emitter peak voltage VGES ±20 V F3L340R12W3H7_H11 EasyPACK™ module Datasheet 3 Revision 1.00 2024-12-04
Table 4 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 340 A, VGE = 15 V Tvj = 25 °C 1.71 2.25 V Tvj = 125 °C 1.91 Tvj = 175 °C 2.00 Gate threshold voltage VGEth IC = 5.44 mA, VCE = VGE, Tvj = 25 °C 4.85 5.5 6.15 V Gate charge QG VGE = ±15 V, VCC = 600 V, Tvj = 25 °C 5.01 µC Internal gate resistor RGint Tvj = 25 °C 2.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 38.6 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.608 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 22 µA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA Turn-on delay time (inductive load) tdon IC = 340 A, VCC = 500 V, VGE = ±15 V, RGon = 0.11 Ω Tvj = 25 °C 0.327 µs Tvj = 125 °C 0.366 Tvj = 175 °C 0.388 Rise time (inductive load) tr IC = 340 A, VCC = 500 V, VGE = ±15 V, RGon = 0.11 Ω Tvj = 25 °C 0.026 µs Tvj = 125 °C 0.032 Tvj = 175 °C 0.035 Turn-off delay time (inductive load) tdoff IC = 340 A, VCC = 500 V, VGE = ±15 V, RGoff = 2.4 Ω Tvj = 25 °C 0.510 µs Tvj = 125 °C 0.570 Tvj = 175 °C 0.600 Fall time (inductive load) tf IC = 340 A, VCC = 500 V, VGE = ±15 V, RGoff = 2.4 Ω Tvj = 25 °C 0.046 µs Tvj = 125 °C 0.096 Tvj = 175 °C 0.121 Turn-on energy loss per pulse Eon IC = 340 A, VCC = 500 V, Lσ = 9 nH, VGE = ±15 V, RGon = 0.11 Ω, di/dt =
9450 A/µs (Tvj = 175 °C)
Tvj = 25 °C 11.1 mJ Tvj = 125 °C 13.5 Tvj = 175 °C 15.4 Turn-off energy loss per pulse Eoff IC = 340 A, VCC = 500 V, Lσ = 9 nH, VGE = ±15 V, RGoff = 2.4 Ω, dv/dt =
8080 V/µs (Tvj = 175 °C)
Tvj = 25 °C 7.9 mJ Tvj = 125 °C 12.7 Tvj = 175 °C 15.3 Thermal resistance, junction to heat sink RthJH per IGBT , λgrease = 3.3 W/(m·K) 0.242 K/W (table continues...) F3L340R12W3H7_H11 EasyPACK™ module Datasheet 4 Revision 1.00 2024-12-04
Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Temperature under switching conditions Tvj op -40 175 °C Note: Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14.
3 IGBT , T2 / T3
Table 5 Maximum rated values Parameter Symbol Note or test condition Values Unit Collector-emitter voltage VCES Tvj = 25 °C 1200 V Implemented collector current ICN 340 A Continuous DC collector current ICDC Tvj max = 175 °C TH = 65 °C 235 A Repetitive peak collector current ICRM tp limited by Tvj op 680 A Gate-emitter peak voltage VGES ±20 V Table 6 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Collector-emitter saturation voltage VCE sat IC = 340 A, VGE = 15 V Tvj = 25 °C 1.71 2.25 V Tvj = 125 °C 1.91 Tvj = 175 °C 2.00 Gate threshold voltage VGEth IC = 5.44 mA, VCE = VGE, Tvj = 25 °C 4.85 5.5 6.15 V Gate charge QG VGE = ±15 V, VCC = 600 V, Tvj = 25 °C 5.01 µC Internal gate resistor RGint Tvj = 25 °C 2.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 38.6 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.608 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 25 °C 23 µA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C 100 nA (table continues...) F3L340R12W3H7_H11 EasyPACK™ module Datasheet 5 Revision 1.00 2024-12-04
Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Turn-on delay time (inductive load) tdon IC = 340 A, VCC = 500 V, RGon = 0.47 Ω Tvj = 25 °C 0.370 µs Tvj = 125 °C 0.410 Tvj = 175 °C 0.430 Rise time (inductive load) tr IC = 340 A, VCC = 500 V, RGon = 0.47 Ω Tvj = 25 °C 0.036 µs Tvj = 125 °C 0.041 Tvj = 175 °C 0.045 Turn-off delay time (inductive load) tdoff IC = 340 A, VCC = 500 V, RGoff = 9.1 Ω Tvj = 25 °C 1.080 µs Tvj = 125 °C 1.150 Tvj = 175 °C 1.200 Fall time (inductive load) tf IC = 340 A, VCC = 500 V, RGoff = 9.1 Ω Tvj = 25 °C 0.025 µs Tvj = 125 °C 0.062 Tvj = 175 °C 0.096 Turn-on energy loss per pulse Eon IC = 340 A, VCC = 500 V, Lσ = 9 nH, RGon = 0.47 Ω, di/dt = 7100 A/µs (Tvj = 175 °C) Tvj = 25 °C 11.7 mJ Tvj = 125 °C 12.5 Tvj = 175 °C 13.8 Turn-off energy loss per pulse Eoff IC = 340 A, VCC = 500 V, Lσ = 9 nH, RGoff = 9.1 Ω, dv/dt = 5700 V/µs (Tvj = 175 °C) Tvj = 25 °C 10.5 mJ Tvj = 125 °C 14.3 Tvj = 175 °C 17 Thermal resistance, junction to heat sink RthJH per IGBT , λgrease = 3.3 W/(m·K) 0.225 K/W Temperature under switching conditions Tvj op -40 175 °C Note: Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14.
4 Diode, D1 / D4
Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Implemented forward current IFN 400 A (table continues...) F3L340R12W3H7_H11 EasyPACK™ module Datasheet 6 Revision 1.00 2024-12-04
Table 7 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak forward current IFRM tP = 1 ms 800 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 5700 A²s Tvj = 175 °C 5050 Table 8 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 400 A, VGE = 0 V Tvj = 25 °C 2.50 3.05 V Tvj = 125 °C 2.18 Tvj = 175 °C 1.98 Peak reverse recovery current IRM VCC = 500 V, IF = 400 A, VGE = -15 V, -diF/dt =
7100 A/µs (Tvj = 175 °C)
Tvj = 25 °C 185 A Tvj = 125 °C 290 Tvj = 175 °C 340 Recovered charge Qr VCC = 500 V, IF = 400 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 11.5 µC Tvj = 125 °C 25.8 Tvj = 175 °C 35.5 Reverse recovery energy Erec VCC = 500 V, IF = 400 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 3.3 mJ Tvj = 125 °C 7.89 Tvj = 175 °C 11.4 Thermal resistance, junction to heat sink RthJH per diode, λgrease = 3.3 W/(m·K) 0.293 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
5 Diode, D2 / D3
Table 9 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Implemented forward current IFN 300 A (table continues...) F3L340R12W3H7_H11 EasyPACK™ module Datasheet 7 Revision 1.00 2024-12-04
Table 9 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Continuous DC forward current IF 250 A Repetitive peak forward current IFRM tP = 1 ms 500 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 9240 A²s Tvj = 175 °C 8070 Table 10 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 250 A, VGE = 0 V Tvj = 25 °C 1.62 1.93 V Tvj = 125 °C 1.50 Tvj = 175 °C 1.42 Peak reverse recovery current IRM VCC = 500 V, IF = 250 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 195 A Tvj = 125 °C 265 Tvj = 175 °C 307 Recovered charge Qr VCC = 500 V, IF = 250 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 17.5 µC Tvj = 125 °C 34.7 Tvj = 175 °C 46.1 Reverse recovery energy Erec VCC = 500 V, IF = 250 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 5.2 mJ Tvj = 125 °C 11.6 Tvj = 175 °C 15.7 Thermal resistance, junction to heat sink RthJH per diode, λgrease = 3.3 W/(m·K) 0.298 K/W Temperature under switching conditions Tvj op -40 175 °C Note: Tvj op > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14.
6 Diode, D5 / D6
Table 11 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V (table continues...) F3L340R12W3H7_H11 EasyPACK™ module Datasheet 8 Revision 1.00 2024-12-04
Table 11 (continued) Maximum rated values Parameter Symbol Note or test condition Values Unit Implemented forward current IFN 300 A Repetitive peak forward current IFRM tP = 1 ms 600 A I2t - value I2t tP = 10 ms, VR = 0 V Tvj = 125 °C 3850 A²s Tvj = 175 °C 3300 Table 12 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Forward voltage VF IF = 300 A, VGE = 0 V Tvj = 25 °C 2.50 3.05 V Tvj = 125 °C 2.18 Tvj = 175 °C 1.98 Peak reverse recovery current IRM VCC = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 182 A Tvj = 125 °C 276 Tvj = 175 °C 329 Recovered charge Qr VCC = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 9 µC Tvj = 125 °C 20 Tvj = 175 °C 28 Reverse recovery energy Erec VCC = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = Tvj = 25 °C 2.62 mJ Tvj = 125 °C 6.41 Tvj = 175 °C 9.33 Thermal resistance, junction to heat sink RthJH per diode, λgrease = 3.3 W/(m·K) 0.606 K/W Temperature under switching conditions Tvj op -40 175 °C Note: T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
7 NTC-Thermistor
Table 13 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Rated resistance R25 TNTC = 25 °C 5 kΩ (table continues...) F3L340R12W3H7_H11 EasyPACK™ module Datasheet 9 Revision 1.00 2024-12-04
Table 13 (continued) Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 % Power dissipation P25 TNTC = 25 °C 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 10 Revision 1.00 2024-12-04
8 Characteristics diagrams
Output characteristic (typical), IGBT , T1 / T4 IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT , T1 / T4 IC = f(VCE) Tvj = 175 °C 136 204 272 340 408 476 544 612 680 136 204 272 340 408 476 544 612 680 Transfer characteristic (typical), IGBT , T1 / T4 IC = f(VGE) VCE = 20 V Gate charge characteristic (typical), IGBT , T1 / T4 VGE = f(QG) IC = 340 A, Tvj = 25 °C 136 204 272 340 408 476 544 612 680 0 1 2 3 4 5 6 -15 -10 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 11 Revision 1.00 2024-12-04
Capacity characteristic (typical), IGBT , T1 / T4 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C Switching times (typical), IGBT , T1 / T4 t = f(IC) RGoff = 2.4 Ω, RGon = 0.11 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 175 °C 0 10 20 30 40 50 60 70 80 90 100 0.1 100 0 85 170 255 340 425 510 595 680 0.01 0.1 Switching times (typical), IGBT , T1 / T4 t = f(RG) VGE = ±15 V, IC = 340 A, VCC = 500 V, Tvj = 175 °C Switching losses (typical), IGBT , T1 / T4 E = f(IC) RGoff = 2.4 Ω, RGon = 0.11 Ω, VCC = 500 V, ± 15 V 0.01 0.1 0 85 170 255 340 425 510 595 680 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 12 Revision 1.00 2024-12-04
Switching losses (typical), IGBT , T1 / T4 E = f(RG) IC = 340 A, VCC = 500 V, ± 15 V Reverse bias safe operating area (RBSOA), IGBT , T1 / IC = f(VCE) RGoff = 2.4 Ω, VGE = ±15 V, Tvj = 175 °C 0 200 400 600 800 1000 1200 1400 170 255 340 425 510 595 680 765 850 Transient thermal impedance, IGBT , T1 / T4 Zth = f(t) Output characteristic (typical), IGBT , T2 / T3 IC = f(VCE) VGE = 15 V 0.01 0.1 1 10 0.01 0.1 136 204 272 340 408 476 544 612 680 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 13 Revision 1.00 2024-12-04
Output characteristic field (typical), IGBT , T2 / T3 IC = f(VCE) Tvj = 175 °C Transfer characteristic (typical), IGBT , T2 / T3 IC = f(VGE) VCE = 20 V 136 204 272 340 408 476 544 612 680 136 204 272 340 408 476 544 612 680 Gate charge characteristic (typical), IGBT , T2 / T3 VGE = f(QG) IC = 340 A, Tvj = 25 °C Capacity characteristic (typical), IGBT , T2 / T3 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 0 1 2 3 4 5 6 -15 -10 0 10 20 30 40 50 60 70 80 90 100 0.1 100 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 14 Revision 1.00 2024-12-04
Switching times (typical), IGBT , T2 / T3 t = f(IC) RGoff = 9.1 Ω, RGon = 0.47 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 175 °C Switching times (typical), IGBT , T2 / T3 t = f(RG) VGE = ±15 V, IC = 340 A, VCC = 500 V, Tvj = 175 °C 0 85 170 255 340 425 510 595 680 0.01 0.1 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 Switching losses (typical), IGBT , T2 / T3 E = f(IC) RGoff = 9.1 Ω, RGon = 0.47 Ω, VCC = 500 V, ± 15 V Switching losses (typical), IGBT , T2 / T3 E = f(RG) IC = 340 A, VCC = 500 V, ± 15 V 0 85 170 255 340 425 510 595 680 0 1 2 3 4 5 6 7 8 9 10 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 15 Revision 1.00 2024-12-04
Reverse bias safe operating area (RBSOA), IGBT , T2 / IC = f(VCE) RGoff = 9.1 Ω, VGE = ±15 V, Tvj = 175 °C Transient thermal impedance, IGBT , T2 / T3 Zth = f(t) 0 200 400 600 800 1000 1200 1400 170 255 340 425 510 595 680 765 850 0.001 0.01 0.1 1 10 0.01 0.1 Forward characteristic (typical), Diode, D1 / D4 IF = f(VF) Switching losses (typical), Diode, D1 / D4 Erec = f(IF) RGon = 0.47 Ω, VCC = 500 V 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 16 Revision 1.00 2024-12-04
Switching losses (typical), Diode, D1 / D4 Erec = f(RG) IF = 400 A, VCC = 500 V Transient thermal impedance, Diode, D1 / D4 Zth = f(t) 0 1 2 3 4 5 0.001 0.01 0.1 1 10 0.01 0.1 Forward characteristic (typical), Diode, D2 / D3 IF = f(VF) Switching losses (typical), Diode, D2 / D3 Erec = f(IF) RGon = 0.47 Ω, VCC = 500 V 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 17 Revision 1.00 2024-12-04
Switching losses (typical), Diode, D2 / D3 Erec = f(RG) IF = 250 A, VCC = 500 V Transient thermal impedance, Diode, D2 / D3 Zth = f(t) 0.001 0.01 0.1 1 10 0.01 0.1 Forward characteristic (typical), Diode, D5 / D6 IF = f(VF) Switching losses (typical), Diode, D5 / D6 Erec = f(IF) RGon = 0.11 Ω, VCC = 500 V 100 200 300 400 500 600 0 100 200 300 400 500 600 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 18 Revision 1.00 2024-12-04
Switching losses (typical), Diode, D5 / D6 Erec = f(RG) IF = 300 A, VCC = 500 V Transient thermal impedance, Diode, D5 / D6 Zth = f(t) 0.001 0.01 0.1 1 10 0.01 0.1 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 0 25 50 75 100 125 150 175 100 1000 10000 100000 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 19 Revision 1.00 2024-12-04
9 Circuit diagram
F3L340R12W3H7_H11 EasyPACK™ module Datasheet 20 Revision 1.00 2024-12-04
12,2\ 0,1 recommended pcb design height - Details about hole specification for contacts refer to AN2023-07 chapter 2 - Tolerance of PCB hole pattern W00250093.04 Height of module mounting area from heatsink, in delivery condition: 4mm module labeling 8x40 j n0,1 Dimensioned for self tapping screw n2,5mm choose length according to PCB thickness max. screw-in depth 8,5mm 2x dimensioned for M5 screw 62\ 0,45 110\0,45 47,43 47,43 99,3( \0,1) Distance of threaded holes in heat sink (n4,2) 3,4) 12(2x ) (2x ) 20 (2x (12) (16,4) n according to screw head washer to mount module to heat sinkn3,54x (optional hole for self tapping screw n 2,5mm) 4,8 11,2 14,4 17,6 20,8 (26) 4,8 14,4 17,6 20,8 (26) 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 32,88 (44,43) 49,68 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08 (44,43) 49,68 Figure 2 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 21 Revision 1.00 2024-12-04
11 Module label code
Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1 – 5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 Example 7154914284655054991153071549142846550549911530 Figure 3 F3L340R12W3H7_H11 EasyPACK™ module Datasheet 22 Revision 1.00 2024-12-04
Revision history
Document version Date of release Description of changes 0.10 2024-08-09 Initial version 1.00 2024-12-04 Final datasheet F3L340R12W3H7_H11 EasyPACK™ module Datasheet 23 Revision 1.00 2024-12-04
All referenced product or service names and trademarks are the property of their respective owners. Edition 2024-12-04 Published by Infineon Technologies AG
81726 Munich, Germany
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