F3711S VBSEMI | Alldatasheet
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N-Channel 30-V (D-S) MOSFET
FEATURES
TrenchFET® Power M• OSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
OR-ing Server D C / D C Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. PRODUCT SUMMARY RDS(on) (VDS (V) ) ID (A)a, e Qg (Typ) 0.0024at VGS = 10 V 98 82 nC0.0027at VGS = 4.5 V 98 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit VDrain-Source Voltage DS 30 VVGate-Source Voltage GS ± 20 TC Continuous Drain Current (TJ = 175 °C) = 25 °C 98a, ID e 98TC A = 70 °C e 28.8b,TA = 25 °C c 27b,TA = 70 °C c IPulsed Drain Current DM 300 Avalanche Current Pulse I L = 0.1 mH AS 36 ESingle Pulse Avalanche Energy AS 64.8 V TC Continuous Source-Drain Diode Current = 25 °C 90a, IS e A 3.13b,TA = 25 °C c TC Maximum Power Dissipation = 25 °C 250 PD a TC W = 70 °C 175 3.75b,TA = 25 °C c 2.63b,TA = 70 °C c TJ, TOperating Junction and Storage Temperature Range stg °- 55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit t Maximum Junction-to-Ambientb, d 10 sec RthJA 32 40 °C/W Maximum Junction-to-Case RSteady State thJC 0.5 0.6 D2PAK (TO-263) G D S F3711S-VB www.VBsemi.com g
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDrain-Source Breakdown Voltage DS VGS = 0 V, ID = 250 µA 30 V VDS/TVDS Temperature Coefficient J ID = 250 µA 35 mV/°CVGS(th)/TVGS(th) Temperature Coefficient J - 7.5 VDS = VGS, IDVGate-Source Threshold Voltage GS(th) = 250 µA 1.5 2.5 V VDS = 0 V, VGS = ± 2IGate-Source Leakage GSS 0 V ± 100 nA VDS = 30 V, VGS IZero Gate Voltage Drain Current DSS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta VDS 5 V, VGS = 10ID(on) V 90 A Drain-Source On-State Resistancea VGS = 10 V, ID RDS(on) = 28.8 A 0.0024 VGS = 4.5 V, ID = 27 A 0.0027 Forward Transconductancea gfs VDS = 15 V, ID = 28.8 A 160 S Dynamicb CInput Capacitance iss VDS = 15 V, VGS = 0 V, f = 1 MHz 12065 Cos pFOutput Capacitance s 1725 CrsReverse Transfer Capacitance s 970 VDS = 15 V, VGS = 10 V, ID QTotal Gate Charge g = 28.8 A 171 257 nCVDS = 15 V, VGS = 4.5 V, ID = 28.8 A 81.5 123 QGate-Source Charge gs 34 QGate-Drain Charge gd 29 RGate Resistance g f = 1 MHz 1.4 2.1 td(Tur n-On Delay Time on) VDD = 15 V, RL = 0.625 ID 24 A, VGEN = 10 V, Rg = 1 18 27 t ns Rise Time r 11 17 td(Turn-Off Delay Time off) 70 105 tFall Time f 10 15 td(Turn-On Delay Time on) VDD = 15 V, RL = 0.67 ID 22.5 A, VGEN = 4.5 V, Rg = 1 55 83 tRise Time r 180 270 td(Turn-Off Delay Time off) 55 83 tFall Time f 12 18 Drain-Source Body Diode Characteristics TC = 25 IContinuous Source-Drain Diode Current S °C 90 A Pulse Diode Forward Currenta ISM 90 IS = 22VBody Diode Voltage SD A 0.8 1.2 V tBody Diode Reverse Recovery Time rr IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 52 78 ns QBody Diode Reverse Recovery Charge rr 70.2 105 nC tReverse Recovery Fall Time a 27 nstReverse Recovery Rise Time b 25 F3711S-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance VGS = 10 V thru 4 V u ( t n e r rA VDS - Drain-to-Source Voltage (V) )C n i a r D - ID = 2 VGS V VGS = 3 V 100 200 300 400 500 600 0 1 02 03 04 05 06 07 0 809 0 u e c n a t cS ()d n o c s n a r T - Gfs ID - Drain Current (A) T C = - 55 °C T C = 25 °C T C = 125 °C 3000 6000 9000 12 000 15 000 0 12 16 8 24 30 p ( e c n a t i c a p a C - CF VDS - Drain-to-Source Voltage (V) C iss C oss Transfer Ch C rss aracteristics RDS(on) vs. Drain Current Gate Charge 0.0 0.6 1.2 2.4 3.0 012 34 VGS - Gate-to-Source Voltage (V) u ( t n e r rA)C n i a r D - ID T C = 25 °C T C = - 55 °C T C = 125 °C 0.00 0.0045 0.0040 0.0035 0.0030 0.002 0.0020 0 1 53 04 56 07 59 0 RDS(on) n a t s i s e R - n O –ce (Ω ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 120 1 5 0 1 8306 090 0 0 VGS o S - o t - e t a G -u e c rV e g a t l o(V Qg - Total Gate Charge (nC) I D = 28.8 A VDS = 15 VDS = 24 V V F3711S-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature RDS(on) vs. VGS vs. Temperature 0.6 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) R o ( S Dn) ) VGS = 10 V, ID = 28.8 A VGS = 4.5 V, ID e R - n O -sistance (N d e z i l a m r o = 27 A 0.000 0.001 0.002 0.003 0.004 0.005 0246 8 10 RDS(on) - n a t s i s e R - n O ce ( VGS - Gate-to-Source Voltage (V) I D = 28.8 A T A = 125 °C Forward Diod T A = 25 °C e Voltage vs. Temperature Threshold Voltage 0.001 0.01 100 0 0.2 0.4 0.6 0. 8 1 u C e c ru ( t n e r rA)o S - I VSD - Source-to-Drain Voltage (V S T J = 25 °C T J = 150 °C 0.8 1.2 1.6 2.0 2.4 e c n a i r a(V)V Vt ( S Gh) - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) I D = 250 µA Safe Operating Area, Junction-to-Ambient 0.001 0.01 100 1000 0.1 1 10 100 ID - T A = 25 °C Single Pulse Drain Current (A) dc 10 s 1 s 100 ms 10 ms *Limited by rDS (on) *VGS VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified F3711S-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) *The power dissipation PD is ba sed on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 300 250 200 150 100 0 25 50 75 100 125 150 175 ID C n i a r D - u ( t n e r rA) TC - Case Temperature (°C) Package Limited Power Derating 300 250 200 150 100 0 25 50 75 100 125 150 175 TC - Case Temperatu o Pw n o i t a p i s s i D r e(W) re (°C) Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Eff ective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 F3711S-VB www.VBsemi.com g
TO-263AB (HIGH VOLTAGE) Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 1 3 D B B E H BA Detail A A A c A 2 x b2 2 x 2 x e b A0.010 BMM ± 0.004 BM Base metal Plating b1, b3 (b, b2) c1(c) Section B - B and C - C Scale: none Lead tip (Datum A)
2 C C
E B HGau Seating plane ge plane 0° to 8° Detail “A” Rotated 90° CW scale 8:1 L3 A1L4L INCMILLIMETERS HES MILLIMETERS INCHES ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 F3711S-VB www.VBsemi.com g
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) F3711S-VB www.VBsemi.com g
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