F3205Z

IRF3205Z IRF | Alldatasheet

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ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°CContinuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed D rain C urrent /c99 PD @T C = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy/c100 mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value /c104 IAR Avalanche C urrent/c3 /c99 A EAR R epetitive Avalanche Energy /c103 mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw /c105 Thermal Resistance Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.90 °C/W R θCS Case-to-Sink, Flat Greased Surface /c105 0.50 ––– R θJA Junction-to-Ambient /c105 ––– 62 R θJA Junction-to-Ambient (PCB Mount) /c106 ––– 40 250 180 See Fig.12a, 12b, 15, 16 170 1.1 ± 20 Max. 110 440 -55 to + 175 300 (1.6mm from case ) 10 lbf/c121 in (1.1N/c121 m)

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS /∆TJ Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C R DS(on) Static Drain-to-Source On-Resistance ––– 4.9 6.5 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 71 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Q g Total Gate Charge ––– 76 110 Q gs Gate-to-Source Charge ––– 21 ––– nC Q gd Gate-to-Drain ("Miller") Charge ––– 30 ––– td(on) Turn-On Delay Time ––– 18 ––– td(off) Turn-Off Delay Time ––– 45 ––– ns LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact C iss Input Capacitance ––– 3450 ––– C oss Output Capacitance ––– 550 ––– C rss Reverse Transfer Capacitance ––– 310 ––– pF C oss Output Capacitance ––– 1940 ––– C oss Output Capacitance ––– 430 ––– C oss eff. Effective Output Capacitance ––– 640 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 (Body Diode) A ISM Pulsed Source Current ––– ––– 440 (Body Diode)/c3/c99 VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 28 42 ns Q rr Reverse Recovery Charge ––– 25 38 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V /c102 VGS = 10V /c101 VDD = 28V ID = 66A R G = 6.8 Ω TJ = 25°C, IS = 66A, VGS = 0V /c101 TJ = 25°C, IF = 66A, VDD = 25V di/dt = 100A/µs /c101 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 66A /c101 VDS = VGS , ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 66A ID = 66A VDS = 44V Conditions VGS = 10V /c101 VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 20V VGS = -20V

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) 4.5V 20µs PULSE WIDTH Tj = 25°C /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G86/G71/G83 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G56/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G54/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G48/G86 /G66/G79/G84/G84/G79/G77/G32/G32/G52/G46/G53/G86 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current (A) 4.5V 20µs PULSE WIDTH Tj = 175°C /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G86/G71/G83 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G49/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G56/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G55/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G54/G46/G48/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G53/G86 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G53/G46/G48/G86 /G66/G79/G84/G84/G79/G77/G32/G32/G52/G46/G53/G86 VGS , Gate-to-Source Voltage (V) 100 1000 ID, Drain-to-Source Current ( A) TJ = 25°C TJ = 175°C VDS = 25V 20µs PULSE WIDTH 0 2 04 06 08 0 1 0 0 ID, Drain-to-Source Current (A) 100 120 Gfs, Forward Transconductance (S) TJ = 25°C TJ = 175°C VDS = 10V 20µs PULSE WIDTH

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage VSD , Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 1000.0 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 VDS , Drain-to-Source Voltage (V) 1000 2000 3000 4000 5000 6000 C, Capacitance (pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ C iss = Cgs + Cgd, Cds SHORTED C rss = Cgd C oss = Cds + Cgd 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 100 1000 10000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS (on) 100µsec 0 20 40 60 80 100 120 QG Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) VDS = 44V VDS= 28V VDS= 11V ID = 66A

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 25 50 75 100 125 150 175 TC , Case Temperature (°C) 100 120 ID , Drain Current (A) LIMITED BY PACKAGE 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) 0.001 0.01 0.1 Therm al Response ( Z thJC ) 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) 0.5 1.0 1.5 2.0 2.5 RDS(on) , Drain-to-Source On Resistance (Norm alized) ID = 66A VGS = 10V

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 6 www.irf.com Q G Q GS Q GD VG Charge /G49/G48/G32/G86 Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS Fig 14. Threshold Voltage Vs. Temperature R G IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20VVGS 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) 100 150 200 250 300 350 EAS, Single Pulse Avalanche Energy (m J) /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G73/G68 /G32/G84/G79/G80/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G50/G55/G65 /G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G32/G52/G55/G65 /G66/G79/G84/G84/G79/G77/G32/G32/G32/G32/G54/G54/G65 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) 1.0 2.0 3.0 4.0 VGS(th) Gate threshold Voltage (V) ID = 250µA VCC DUT L

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 www.irf.com 7 Fig 15. Typical Avalanche Current Vs.Pulsewidth Fig 16. Maximum Avalanche Energy Vs. Temperature Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) =/G32/G68T/ ZthJC Iav = 2/G68T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav tav (sec) 0.1 100 1000 Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) 120 160 200 EAR , Avalanche Energy (m TOP Single Pulse BOTTOM 10% Duty Cycle ID = 66A

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 8 www.irf.com Fig 17. /G80/G101/G97/G107/G32/G68/G105/G111/G100/G101/G32/G82/G101/G99/G111/G118/G101/G114/G121/G32/G100/G118/G47/G100/G116/G32/G84/G101/G115/G116/G32/G67/G105/G114/G99/G117/G105/G116/G32for N-Channel HEXFET /G174/G32Power MOSFETs /G67/G105/G114/G99/G117/G105/G116/G32/G76/G97/G121/G111/G117/G116/G32/G67/G111/G110/G115/G105/G100/G101/G114/G97/G116/G105/G111/G110/G115

• /G32/G76/G111/G119/G32/G83/G116/G114/G97/G121/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32 • /G71/G114/G111/G117/G110/G100/G32/G80/G108/G97/G110/G101 /G32/G32 • /G76/G111/G119/G32/G76/G101/G97/G107/G97/G103/G101/G32/G73/G110/G100/G117/G99/G116/G97/G110/G99/G101 /G32/G32/G32/G32/G32/G32/G67/G117/G114/G114/G101/G110/G116/G32/G84/G114/G97/G110/G115/G102/G111/G114/G109/G101/G114 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period /G42/G32/G86/G71/G83/G32/G61/G32/G53/G86/G32/G102/G111/G114/G32/G76/G111/G103/G105/G99/G32/G76/G101/G118/G101/G108/G32/G68/G101/G118/G105/G99/G101/G115 /G42 /G131 /G132/G130 /G82/G71 /G86/G68/G68• /G100/G118/G47/G100/G116/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G82/G71
• /G68/G114/G105/G118/G101/G114/G32/G115/G97/G109/G101/G32/G116/G121/G112/G101/G32/G97/G115/G32/G68/G46/G85/G46/G84/G46
• /G73/G83/G68/G32/G99/G111/G110/G116/G114/G111/G108/G108/G101/G100/G32/G98/G121/G32/G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32/G34/G68/G34
• /G68/G46/G85/G46/G84/G46/G32/G45/G32/G68/G101/G118/G105/G99/G101/G32/G85/G110/G100/G101/G114/G32/G84/G101/G115/G116 /G68/G46/G85/G46/G84 /G129 VDS 90% 10% VGS td(on) tr td(off) tf /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G49/G48/G86 -/G86/G68/G68 Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 www.irf.com 9 /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN - B - 1.32 (.052) 1.22 (.048) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3X 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - A - 10.54 (.415) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 0.36 (.014) M B A M 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. /G84/G79/G45/G50/G50/G48/G65/G66/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 EXA M PLE: IN THE A SSEM BLY LINE "C " THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 PA RT NUMBER A SSEM BLY LO T C O DE DAT E CODE YEAR 7 = 1997 LINE C W EEK 19 LO G O RECTIFIER INTERNATIONA L EXA M PLE: THIS IS A N IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE A SSEM BLY LIN E " C " INTERNATIONA L REC TIFIER LO G O LO T C O DE PART NUMBER DAT E CODE For GB Production

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 10 www.irf.com /G68/G50/G80/G97/G107/G32/G80/G97/G114/G116/G32/G77/G97/G114/G107/G105/G110/G103/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 F530S THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE A SSEM BLY LINE "L" A SSEM BLY LO T C O DE INTERNATIONAL RECTIFIER LO G O PA RT NUMBER DAT E CODE YEAR 0 = 2000 W EEK 02 LINE L /G68/G50/G80/G97/G107/G32/G80/G97/G99/G107/G97/G103/G101/G32/G79/G117/G116/G108/G105/G110/G101 Dimensions are shown in millimeters (inches) DAT E CODE IN THE A SSEM BLY LINE "L" AS S EMBLED ON WW 02, 2000 THIS IS AN IRF530S WITH LOT CODE 8024 INTERNATIONAL LO G O RECTIFIER LO T C O DE PA RT NUMBER F530S For GB Production

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 www.irf.com 11 Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLY PART NUMBER DATE CODE WEEK 19 LINE C LOT CODE YEAR 7 = 1997 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" LOGO RECTIFIER INTERNATIONAL /G32/G32/G32/G32/G32/G32/G32/G32/G32IGBT 1- GATE 2- COLLEC- TOR

/G73/G82/G70/G51/G50/G48/G53/G90/G83/G47/G76 12 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/03 TO-220AB package is not recommended for Surface Mount Application. /G129/G32Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). /G130 /G32Limited by TJmax , starting TJ = 25°C, L = 0.08mH RG = 25Ω, IAS = 66A, VGS =10V. Part not recommended for use above this value. /G131 Pulse width ≤ 1.0ms; duty cycle ≤ 2%. /G132 C oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . /G78/G111/G116/G101/G115/G58 /G133/G32Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. /G134/G32This value determined from sample failure population. 100% tested to this value in production. /G135 This is only applied to TO-220AB pakcage. /G136 This is applied to D2Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. /G68/G50/G80/G97/G107/G32/G84/G97/G112/G101/G32/G38/G32/G82/G101/G101/G108/G32/G73/G110/G102/G111/G114/G109/G97/G116/G105/G111/G110 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.