SGSF313 STMICROELECTRONICS | Alldatasheet
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Technical content
MICROELECTRONICS SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS = HIGH VOLTAGE CAPABILITY (450V Vceo) = VERY HIGH SWITCHING SPEED: tr = 35ns TYPICALAT Ic =2.5A, Ip1 =0.5A, Veeott =-5V = LOW SATURATION VOLTAGE © GA = COMPLETE CHARACTERIZATION AT 100 °C 4 o% = U.L. RECOGNISED ISOWATT220 PACKAGE 0 NZ (U.L. FILE # E81734 (N)). iN la APPLICATION 3 = SWITCH MODE POWER SUPPLIES 1 2 1 2 a FLYBACKAND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS TO-220 ISOWATT220
DESCRIPTION
The SGSF313 and SGSF313PI are high voltage NPN FASTSWITCHING transistors designed to be used as switch in high efficency OFF-LINE (220V mains) switching power supplies for consumer applications like sets VCR’s and INTERNAL SCHEMATIC DIAGRAM monitors. Co (2) (1) 9 B £0(3) scosa6o ABSOLUTE MAXIMUM RATINGS ie ee |_lom Collector Peak Current (p<5ms) | tA [te [Base Current |_lem [Base Peak Current (p<5ms) PA |__Piot__[Total Dissipation atTo=25°C | oT 85 Tw September 1997 W7
Po 20-220 isowarre21 | | ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) [ symboi | Parameter | Test Conditions [ min. | typ. | Mex. | unit | Ices Collector Cut-off Vce = 1000 V 10 HA Current (Vae = 0) Vce=1000V 1) = 125°C 100 | pA IceO Collector Cut-off Vec = 450 V 100 pA Current (ls = 0) Vceo(sus) |Collector-Emitter Ic = 100 mA L=25 mH 450 Vv Sustaining Voltage Vce\\sat)* |Collector-Emitter Ilo=1A IB=0.1A 0.5 Vv Saturation Voltage Ic=2A Ip=0.4A 0.45 Vv Ilc=25A Ip=0.5A 0.75 v lo=1A Ip=01A T= 125°C 0.6 Vv Ilc=2A IB=0.4A Tj) =125°C 0.8 Vv Vae(saty* |Base-Emitter lc=1A Ip=0.1A 11 Vv Saturation Voltage Ilc=2A Ip=04A 1.25 Vv Ilc=25A Ip=0.5A 1.3 Vv hre* DC Current Gain lo=1A Voce =2.5V 12 Ilc=1A Voce =5V 15 30 45 Ilo=2A Vce=1V 6 Io=5mA Voe=5V 10 los 1A Voce = 2.5V Tj = 125°C 25 lc=1A Veoe=5V 1) = 125°C 28 Ic=2A Vce=1V 7) = 125°C 12 RESISTIVE LOAD Veco = 250V Ic=2.5A ton | Turn-on Time Is =0.5A Ipo=-1A 0.5 1 ys ts Storage Time 1.5 25 ys tr Fall Time 0.18 0.3 us RESISTIVE LOAD Veco =250V Ic=2.5A ton Turn-on Time Ip =0.5A — Ip2=-1A 0.5 us ts Storage Time With Antisaturation Network 11 us t Fall Time 0.13 us RESISTIVE LOAD Veco =250V Ic =2.5A ton Turn-on Time Is1 = O0.5A Veeorn= -5 V 05 us ts Storage Time 1A us te Fall Time 0.13 us INDUCTIVE LOAD Ic=2.5A hre =5A ts Storage Time Vecwort)=-5 V Res = 22 bs tr Fall Time Vet = 300 VL = 300 HH us INDUCTIVE LOAD Ic =2.5A hre =5A Storage Time Vecwort)=-5 V Res = 22 3 bs Fall Time Ve. = 300 VL = 300 HH 0.3 us Tj = 100 °C * Pulsed: Pulse duration = 300 1s, duty cycle 1.5 % SS _ i 868-THOMSON “Y/ wcrosuecmmones
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