F30U60S THINKISEMI | Alldatasheet
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Technical content
30Amperes,600Volts Insulated Ultra Fast Soft Recovery Epitaxial Diode Pb Internal Configuration Cathode Anode
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- 175 Operating Junction Temperature
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE F30U60S using lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. F30U60S © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.08T Absolute Maximum Ratings Parameter Symbol Test Conditions Values Units Repetitive peak reverse voltage VRRM 600 V Continuous forward current IF(AV) Tc =110°C 30 ASingle pulse forward current IFSM Tc =25°C 240 Maximum repetitive forward current IFRM Square wave, 20kHZ 55 Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.08T Thermal characteristics Electrical performance (typic) Electrical characteristics (Ta=25°Cunless otherwise specified) Parameter Symbol Test Conditions Min Typ. Max. Units Breakdown voltage Blocking voltage VBR, VR IR=100µA 600 VForward voltage (Per Diode) VF IF=30A 1.30 1.60 IF=30A, Tj =125°C 1.05 1.40 Reverse leakage current(Per Diode) IR VR= VRRM 20 µA Tj=150°C, VR=600V 200 Reverse recovery time(Per Diode) trr IF=0.5A, IR=1A, IRR=0.25A 38 50 ns IF=1A,VR=30V, di/dt =200A/us 28 35 Paramter Symbol Typ Units Junction-to-Case RθJC ℃/W2.5 F30U60S
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.08T ITO-220AC/TO-220F-2L Package Outline: .196(5.00) .118(3.00) .038(0.96) .419(10.66) .167(3.73) .122(3.10) .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .079(2.00) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Unit : inch (mm) F30U60S