F30C20A THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: TO-220F fully plastic isolated encapsulation /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant F30C20A thru F30C60A Pb Free Plating Product F30C20A/F30C40A/F30C60A
30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
/hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems ITO-220AB/TO-220F-3L Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "A" Suffix "D" Suffix "S"Suffix "C" .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Unit : inch (mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS For capacitive load, derate current by 20%. Single phase, half wave, 60Hz, resistive or inductive load. Rating at 25 ambient temperature unless otherwise specified. NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. -55 to + 150 SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 140 200 400 280 600 420 600 30.0 5.0 0.98 35-50 100 150 3.0 UNIT V V V V A A pF nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =125 Half sine-wave superimposed on rated load (JEDEC method) @ 15A At Rated DC Blocking Voltage @T J =125 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range 300 F30C20A 200 400 1.3 1.7 F30C40A F30C60A (Total Device 2x15A=30A) (Per Diode/Per Leg) μA μA /W℃ © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.09T
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 1.0 150 0.1 0 50 100 150 LEAD TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 150 200 250 300 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p F30C20A F30C40A F30C60A . . . © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.09T F30C20A thru F30C60A