F30C20CT THINKISEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 2

Technical content

Features TO-220AB/TO-220-3L Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess FRD/FRED ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case: Heatsink o p en metal TO-220AB/TO-220-3L p acka g e Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y Pb Free Plating Product F30C20CT thru F30C120CT Pb

30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

.196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT VRRM 200 400 600 800 1000 1200 V VRMS 140 280 420 560 700 840 V VDC 200 400 600 800 1000 1200 V IF(AV) A IFSM A VF (Typical) IR μA μA Trr nS CJ pF RθJC ℃/W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 150 Typical Thermal Resistance (Note 3) 1.5 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x15.0A=30.0A) 30.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 300 Maximum Instantaneous Forward Voltage @15.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 5.0 500 1.40-1.80 F30C20CT F30C40CT F30C60CT F30C80CT F30C100CT F30C120CT 35-50 50-75 F30C30CT F30C20CT thru F30C120CT Page 1/2Edition:20210604-V2 Positive Negative Common Cathode Case Case Common Anode Doubler Case Doubler Polarity Case Series Series Connection Prefix "F30A" Prefix "F30D" Prefix "F30S"Prefix "F30C"

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 150 0.1 0 125 CASE TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 120 180 240 300 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100

60 Hz Resistive or

Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 T J =25 T J = 25 f = 1.0 MHZ Vsig = 50mVp-p F30C20CT F30C30CT/F30C40CT F30C60CT F30C80CT/F30C100CT/F30C120CT 62.5 187.5 F30C20CT thru F30C120CT Page 2/2Edition:20210604-V2