F3007S VBSEMI | Alldatasheet

Document overview

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Technical content

FEATURES

  • ThunderFET® power MOSFET
  • Maximum 175 °C junction temperature
  • 100 % Rg and UIS tested
  • Material categorization: for definitions of compliance please see Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). TO-263 G D S G D S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ± 20 TC Continuous Drain Current (TJ = 150 °C) = 25 °C ID 120 TC A = 125 °C 65 Pulsed Drain Current (t = 100 μs) IDM 225 Avalanche Current I L = 0.1 mH AS 50 Single Avalanche Energy a EAS 125 mJ TC Maximum Power Dissipation a = 25 °C 370 PD b W 120TC = 125 °C b Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient (PCB Mount) c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.75 F3007S-VB www.VBsemi.com F3007S-VB Datasheet N-Channel 80 V (D-S) MOSFET V mΩ PRODUCT SUMMARY 8VDS 0 RDS(on) VGS = 10 V 6 1RDS(on) VGS = 4.5 V 0 ID 120 Configuration Single g mΩ A Top View

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not su bject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = 250 μA 80 - - V Gate Threshold Voltage VDS = VGS, IDVGS(th) = 250 μA 2.5 - 4.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current VDS = 80 V, V GS IDSS = 0 V - - 1 μA VDS = 80 V, V GS = 0 V, TJ = 125 °C - - 100 VDS = 80 V, V GS = 0 V, TJ = 175 °C - - 2 mA On-State Drain Current a VDS  10 V, VGS ID(on) = 10 V 90 - - A Drain-Source On-State Resistance a VGS = 10 V, ID RDS(on) = 30 A - 6 - VGS = 4.5V, ID = 30 A - 10 - Forward Transconductance a gfs VDS = 15 V, ID = 30 A - 85 - S Dynamic b Input Capacitance Ciss VGS = 0 V, VDS = 40 V, f = 1 MHz - 3330 - pFOutput Capacitance Coss - 1395 - Reverse Transfer Capacitance Crss -9 5- Total Gate Charge c Qg VDS = 40 V, VGS = 10 V, ID = 30 A - 53.5 81 Gate-Source Charge nCc Qgs - 14.5 - Gate-Drain Charge c Qgd - 13.2 - Gate Resistance Rg f = 1 MHz 0.9 1.9 3.8  Turn-On Delay Time c td(on) VDD = 40 V, RL = 1.67  ID  30 A, VGEN = 10 V, Rg = 1  3 2 6 Rise Time ns c tr -2 2 4 4 Turn-Off Delay Time c td(off) -2 7 5 4 Fall Time c tf 1-9 8 Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM -- 2 4 0 A Forward Voltage a VSD IF = 30 A, VGS = 0 V - 0.86 1.4 V Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/μs - 88 176 ns Peak Reverse Recovery Charge I RM(REC) -5 1 0 A Reverse Recovery Charge Qrr - 0.22 0.44 μC mΩ F3007S-VB g www.VBsemi.com

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics Transf Capacitance er Characteristics Gate Charge 100 1000 10000 100 150 200 250 012345 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) VGS VDS - Drain-to-Source Voltage (V) 2nd line = 10 V thru 8 V VGS = 7 V VGS = 4 V VGS = 5 V 100 1000 10000 100 Axis Title 1st line 2nd line 2nd line gfs - Transconductance (S) ID - Drain Current (A) 2nd line Transconductance TC = 25 °C TC =- 5 5 ° C TC = 125 °C 100 1000 10000 1200 2400 3600 4800 6000 10 2 04 06 08 0 0 0 Axis Title 1st line 2nd line 2nd line C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) 2nd line Crss Coss Ciss 100 1000 10000 120 160 200 02468 1 0 Axis Title 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) 2nd line TC = 25 °C TC =- 5 5 ° CTC = 125 °C 100 1000 10000 0.005 0.006 0.007 0.008 0.009 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 2nd line On-Resistance vs. Drain Current VGS = 10 V 100 1000 10000 Axis Titl 0 1 12 23 34 45 5 e 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) VDS Qg - Total Gate Charge (nC) 2nd line = 20 V, 40 V, and 64V ID = 30 A 90 130120110100 F3007S-VB g www.VBsemi.com

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Threshold Voltage Current De-Rating 100 1000 10000 0.5 0.8 1.1 1.4 1.7 2.0 -50 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) 2nd line ID = 30 A VGS = 10 V VGS = 7.5 V 100 1000 10000 0.01 0.02 0.03 0.04 0.05 Ax 2468 1 0 is Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 2nd line On-Resistance vs. Gate-to-Source Voltage TJ = 25 °C TJ = 125 °C 100 1000 10000 0.001 0.01 0.1 100 Axis Title 1st line 2nd line 2nd line IS - Source Current (A) VSD - Source-to-Drain Voltage (V) 2nd line TJ = 150 °C TJ = 25 °C 100 1000 10000 -2.0 -1.4 -0.8 -0.2 0.4 1.0 -50 -25 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line TJ - Temperature (°C) VGS(th) - Variance (V) 2nd line ID = 5 mA ID = 250 μA 100 1000 10000 105 110 115 120 125 -50 -25 0 25 50 75 100 125 150 175 Axis Title 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) TJ - Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature ID = 250 μA 100 1000 10000 120 150 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 Axis Title 1st line 2nd line 2nd line ID - Drain Current (A) TC - Case Temperature (°C) 2nd line F3007S-VB g www.VBsemi.com

THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Safe Operating Area IDAV vs. Time Normalized Thermal Transient Impedance, Junction-to-Ambient 100 1000 10000 0.1 100 1000 0.1 1 10 100 1000 Axis Title 1st line 2nd line ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) (1) VGS > minimum VGS at which RDS(on) is specified IDM limited Limited by RDS(on) (1) TC = 25 °C Single pulse BVDSS limited 100 ms, 1 s, 10 s, DC 10 ms 1 ms 100 μsID limited 100 1000 10000 100 0.00001 0.0001 0. 001 0.01 Axis Title Time (s) 2nd line 2nd line IDAV 1st line 2nd line (A) 2nd line 150 °C 25 °C 100 1000 10000 0.01 0.1 0.001 0.01 0.1 10 100 1000 Axis Title Normalized Effective Tr 1st line 2nd line ansient Thermal Impedance Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 PDM 1. Duty cycle, D = 2. Per unit base = RthJA = 40 °C/W 3. TJM -T A = PDMZthJA (t) 4. Surface mounted Notes: F3007S-VB g www.VBsemi.com

THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Note

  • The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 100 1000 10000 0.01 0.1 0.0001 0.001 0.1 Axis Title Normalized Effective Trans 1st line 2nd line ient Thermal Impedance 0.01 Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 F3007S-VB g www.VBsemi.com

TO-263 (D2PAK): 3-LEAD Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 ca n fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. -A- -B- A A e b E A c L2DL3 L Detail “A” K D3 6

0.010 M A M

DETAIL A (ROTATED 90°) SECTION A-A 0° - 5° M c b INCHES MILLIMETERS A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 c* Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 c1 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 0.010 BSC 0.254 BSC M - 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 F3007S-VB g www.VBsemi.com

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129) Recommended Minimum Pads Dimensions in Inches/(mm) 0.420 (10.668) 0.355 (9.017) 0.145 (3.683) 0.135 (3.429) 0.200 (5.080) 0.050 (1.257) F3007S-VB g www.VBsemi.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury ordeath, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformto confirmcompliancewithIEC61249-2-21standardlevelJS709A. F3007S-VB www.VBsemi.com