F2914

F2914 IDT | Alldatasheet

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High Reliability SP4T RF Switch 50 MHz to 8000 MHz F2914, Rev O 03/01/2016 1 © 2016 Integrated Device Technology, Inc. GENERAL D ESCRIPTION The F2914 is a high reliability, low insertion loss, 50 Ω SP4T absorptive RF switch designed for a multitude of RF applications including wireless communications. This device covers a broad frequency range from 50 MHz to 8000 MHz. In addition to providing low insertion loss, the F2914 also delivers excellent linearity and isolation performance while providing a 50 Ω termination to the unused RF input ports. The F2914 also includes a patent pending constant impedance (K Z) feature. K Z improves system hot switching ruggedness, minimizes LO pulling in VCOs, and reduces phase and amplitude variations in distribution networks. It is also ideal for dynamic switching / selection between two or more amplifiers while avoiding damage to upstream /downstream sensitive devices such as PAs and ADCs. The F2914 uses a single positive supply voltage supporting three logic control pins using either 3.3 V or 1.8 V control logic. Connecting a negative voltage to pin 20 disables the internal negative voltage generator and becomes the negative supply. COMPETITIVE A DVANTAGE The F2914 provides constant impedance in all RF ports during transitions improving a system’s hotKswitching ruggedness. The device also supports high power handling, and high isolation; particularly important for DPD receiver use. /checkbld Constant impedance KK||ZZ|| during switching transition /checkbld RFX to RFC Isolation = 50 dB* /checkbld Insertion Loss = 1.1 dB* /checkbld IIP3: +60 dBm* /checkbld Extended temperature: K40 °C to +105 °C * 4 GHz A PPLICATIONS

• Base Station 2G, 3G, 4G
• Portable Wireless
• Repeaters and E911 systems
• Digital PreKDistortion
• Point to Point Infrastructure
• Public Safety Infrastructure
• Military Systems, JTRS radios
• Cable Infrastructure
• Test / ATE Equipment

FEATURES

• Four symmetric, absorptive RF ports
• High Isolation: 50 dB @ 4000 MHz
• Low Insertion Loss: 1.1 dB @ 4000 MHz
• High Linearity: o IIP2 of 114 dBm @ 2000 MHz o IIP3 of 60 dBm @ 4000 MHz
• High Operating Power Handling: o 33 dBm CW on selected RF port o 27 dBm on terminated ports
• Single 2.7 V to 5.5 V supply voltage
• External Negative Supply Option
• 3.3 V and 1.8 V compatible control logic
• Operating temperature K40 °C to +105 °C
• 4 mm x 4 mm 24 pin QFN package
• Pin compatible with competitors FUNCTIONAL BLOCK D IAGRAM Control Circuit RF4 RF2 RF1 V1 V2 V3 RFC 50Ω 50Ω 50Ω RF3 50Ω VSS EXT K|Z|

ORDERING INFORMATION

& Reel

High Reliability SP4T RF Switch 2 Rev O 03/01/2016 A BSOLUTE M AXIMUM RATINGS Parameter Symbol Min Max Units VDD to GND VDD K0.3 +6.0 V V1, V2, V3 to GND VCNTL K0.3 Minimum RF1, RF2, RF3, RF4, RFC to GND V RF K0.3 +0.3 V VSS EXT to GND VEXT K4.0 +0.3 V Input Power for any one selected RF through port. DD applied @ 2GHz and TC = +85°C) PMAXTHRU 37 dBm Input Power for any one selected RF terminated port .(V DD applied @ 2GHz and TC = +85°C) PMAXTERM 30 dBm Input Power for RFC when in the all off state. DD applied @ 2GHz and TC = +85°C) PMAXCOM 33 dBm Continuous Power Dissipation (TC = 95 °C Max) 3 W Maximum Junction Temperature T Jmax +140 °C Storage Temperature Range T ST K65 +150 °C Lead Temperature (soldering, 10s) T LEAD +260 °C ESD Voltage– HBM (Per JESD22KA114) V ESDHBM Class 1C (1000 V) ESD Voltage – CDM (Per JESD22KC101) V ESDCDM Class III (1000 V) TC = Temperature of the exposed paddle Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. P ACKAGE THERMAL AND M OISTURE CHARACTERISTICS θJA (Junction – Ambient) 41 °C/W θJC (Junction – Case) [The Case is defined as the exposed paddle] 6.4 °C/W Moisture Sensitivity Rating (Per JKSTDK020) MSL1

F2914 RECOMMENDED OPERATING C Parameter Symbol Supply Voltage (s) VDD Pin 20 grounded Pin 20 Driven with VSS VSS EXT Negative Supply Operating Temp Range T CASE Exposed Pad RF Frequency Range F RF RF Continuous Input CW Power

2 PRF Selected Port

RF1 K 4 Port Impedance Z RFx RFC Port Impedance Z RFC Note 1: Fo r normal operation, connect VSS By applying VSS EXT to pin 20, the negative voltage generator is disabled thereby completely eliminating any generator spurious responses. Note 2: Levels based on T C ≤ 85 °C. See Figure 1 power derating curve for higher case temperatures. Note 3: In any of the insertion loss modes or switchi port paths can be each exposed to the maximum stated powe switching operation. Figure 1 - MAXIMUM RF INPUT POWER VS. RF FREQUENCY

3 High Reliability SP4T RF Switch

Pin 20 grounded 2.7 Pin 20 Driven with VSS EXT 2.7 Negative Supply 1 K3.6 K3.4 Exposed Pad dle Temperature K40 Selected Port Terminated Ports 3 RFC as the input Switch to RF1 thru RF4. Switched into or out of all off state. RF1 thru RF5 as the inputs Switched to RFC or into Term Switch into or out of all off condition. r normal operation, connect VSS EXT = 0 V (pin 20) to GND to enable the internal negative voltage generator. to pin 20, the negative voltage generator is disabled thereby completely eliminating any C. See Figure 1 power derating curve for higher case temperatures. In any of the insertion loss modes or switching into any insertion loss mode, the 3 remaining paths can be each exposed to the maximum stated powe r level during continuous or hot MAXIMUM RF INPUT POWER VS. RF FREQUENCY F2914 High Reliability SP4T RF Switch Max Units 5.5 V 5.5 K3.2 +105 OC

8000 MHz

Ω V (pin 20) to GND to enable the internal negative voltage generator. to pin 20, the negative voltage generator is disabled thereby completely eliminating any C. See Figure 1 power derating curve for higher case temperatures. remaining terminated r level during continuous or hot

High Reliability SP4T RF Switch 4 Rev O 03/01/2016 F2914 SPECIFICATION Typical Application Circuit, Normal mode (V DD = 3.3 V, VSS EXT = 0 V) or Bypass mode (V DD = 3.3 V, VSS EXT = K3.3 V), TC = +25 °C, F RF = 2000 MHz, Input power = 0 dBm, Z S = Z L = 50 Ω, RFX = one of the four input ports, PCB board trace and connector losses are deKembedded unless otherwise noted. Parameter Symbol Conditions Min Typ Max Units Logic Input High Threshold V IH 1.1 Minimum ( 3.6, V DD ) V Logic Input Low Threshold V IL -0.3 0.6 V Logic Current I IH, IIL For each control pin -2 +2 µA DC Current (V DD ) I DD Normal Mode 3.3 V or 1.8V Logic 290 360 µA Bypass Mode 3.3 V or 1.8V Logic 270 340 DC Current (VSS EXT ) I VSS VSS EXT = K3.3 V K44 -60 µA Insertion Loss RFX to RFC IL 900 MHz 0.90 1.4 1 dB 2100 MHz 1.1 1.5 2700 MHz 1.15 1.6 2700 MHz – 4000 MHz 1.2 1.65 2 4000 MHz – 8000 MHz 1.8 Minimum Isolation RFX to RFC ISOC 400 MHz – 900 MHz 56 62.2 dB 900 MHz – 2100 MHz 48.5 55.4 2100 MHz – 2700 MHz 48 53.5

2700 MHz – 4000 MHz 44 50

4000 MHz – 8000 MHz 29.5 35.7 Minimum Isolation RFX to RFX ISOX 400 MHz – 900 MHz 55 60.3 dB 900 MHz – 2100 MHz 49.5 53.6

2100 MHz – 2700 MHz 47 52

2700 MHz – 4000 MHz 43 47.6

4000 MHz – 8000 MHz 29 36

T From RFX Active to RFX Term 1.7:1 K From RFX Term to RFX Active 2:1 Minimum Return Loss (RFC Port ) RFC RL 400 MHz – 4000 MHz 15 dB Minimum Return Loss (RFX Port ) RFX RL 400 MHz –4000 MHz Active 13 dB Terminated 17 Input 0.1dB Compression 3 ICP 0.1dB 35 dBm Input IP2 IIP2 FRF1 = 2000 MHz, FRF2 = 2010 MHz RF Input = RFX, PIN = +20 dBm / tone FRF1 + F RF2 Term 114 dBm Input IP3 IIP3 ∆ F = 1 MHz RF Input = RFX PIN = +20 dBm / tone FRF = 2000 MHz 59.5 dBm FRF = 4000 MHz 60 Switching Time 4 T SW Bypass Mode 50% CTRL to 90% RF 256 345 ns 50% CTRL to 10% RF 256 345 50% CTRL to RF settled within +/K 0.1 dB of I.L. value. 285 Maximum Switching Rate 5 SW RATE Pin 20 = GND 25 kHz Pin 20 = VSS EXT applied 290 Maximum spurious level on any RF port

6 Spur MAX RF ports terminated into 50Ω

Note 1 – Items in min/max columns in bold italics are Guaranteed by Test. Note 2 – Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3 – The input 0.1dB compression point is a linearity figure of merit. Refer to Absolute Maximum Ratings section for the maximum RF input power and Figure 1 for maximum operating RF input power. Note 4 – FRF = 1GHz. Note 5 – Minimum time required between switching of states =1/ (Maximum Switching Rate). Note 6 – Spurious due to onKchip negative voltage generator. Typical generator fundamental frequency is 2.2 MHz.

Rev O 03/01/2016 5 High Reliability SP4T RF Switch Table 1: 3-Pin Switch Control Truth Table Mode V3 V2 V1 RF4 on* 0 0 0 RF1 on 0 0 1 RF2 on 0 1 0 RF3 on 0 1 1 RF4 on 1 0 0 All off 1 0 1 All off 1 1 0 All off 1 1 1 * Redundant state with state “100” Table 2: 2-Pin Switch Control Truth Table 1,2 Mode V2 V1 RF4 on 0 0 RF1 on 0 1 RF2 on 1 0 RF3 on 1 1 Note 1 K Pin 19 (V3) must be grounded for 2Kpin control. Note 2 – 2Kpin control can be used if All Off mod e is not required. Typical Operating Conditions (TOC) Unless otherwise noted for the TOC graphs on the following pages, the following conditions apply.

• V DD = 3.3 V.
• TCASE = +25 ºC (T CASE = Temperature of exposed paddle).
• FRF = 2000 MHz.
• RFX is the driven RF port and RFC is the output port.
• Pin = 10 dBm for all small signal tests.
• Pin = +15 dBm/tone applied to selected RFX port for two tone linearity tests.
• Two tone frequency spacing = 5 MHz.
• ZS = Z L = 50 ohms.
• All unused RF ports terminated into 50 ohms.
• For Insertion Loss and Isolation plots, RF trace and connector losses are de-embedded (see EVKIT Board and Connector loss plot).
• Plots for Isolation and Insertion Loss over temperature and voltage are for a typical path. For performance of a specific path, refer to the online S-Parameter file.

High Reliability SP4T RF Switch 6 Rev O 03/01/2016 Typical Operating Conditions (- 1 -) Insertion Loss vs. Selected Switch Path Insertion Loss vs. Voltage RFX /barb2right/barb2right /barb2right/barb2right RFC Isolation vs. Voltage Insertion Loss vs. Temperature RFX /barb2right/barb2right /barb2right/barb2right RFC Isolation vs. Temperature RFX /barb2right/barb2right /barb2right/barb2right RFX Isolation vs. Temperature m2.5 m1.5 m0.5 0 1 2 3 4 5 6 7 8 Insertion Loss(dB) Frequency (GHz) RF1 RF2 RF3 RF4 m2.5 m1.5 m0.5 0 1 2 3 4 5 6 7 8 Insertion Loss(dB) Frequency (GHz) 2.7V 3.3V 5.0V 5.5V m90 m80 m70 m60 m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Isolation (dB) Frequency (GHz) 2.7V 3.3V 5.0V 5.5V m2.5 m1.5 m0.5 0 1 2 3 4 5 6 7 8 Insertion Loss(dB) Frequency (GHz) m40C 25C 105C m90 m80 m70 m60 m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Isolation (dB) Frequency (GHz) m40C 25C 105C m110 m100 m90 m80 m70 m60 m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Isolation (dB) Frequency (GHz) m40C 25C 105C

Rev O 03/01/2016 7 High Reliability SP4T RF Switch Typical Operating Conditions (- 2 -) RFX /barb2right/barb2right /barb2right/barb2right RFX Isolation vs. Voltage RFX Selected Return Loss vs. Temperature RFC Return Loss vs. Selected RFX Port RFX Return Loss vs. Selected RFX Port RFX Selected Return Loss vs. Voltage RFC Return Loss with RFX Selected vs. Temperature m110 m100 m90 m80 m70 m60 m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Isolation (dB) Frequency (GHz) 2.7V 3.3V 5.0V 5.5V m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) m40C 25C 105C m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) RF1 RF2 RF3 RF4 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) RF1 RF2 RF3 RF4 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) 2.7V 3.3V 5.0V 5.5V m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) m40C 25C 105C

High Reliability SP4T RF Switch 8 Rev O 03/01/2016 Typical Operating Conditions (- 3 -) RFC Return Loss with RFX Selected vs. Voltage RFX Terminated Return Loss vs. Temperature Return Loss (During Switching) vs. Time RFX Terminated Return Loss vs. RFX Port RFX Terminated Return Loss vs. Voltage VSWR (During Switching) vs. Time m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) 2.7V 3.3V 5.0V 5.5V m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) m40C 25C 105C m40 m35 m30 m25 m20 m15 m10 Return Loss Time (µsec) RFX Term mmm> RFX Active RFX Active mmm> RFX Term m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) RF1 RF2 RF3 RF4 m50 m40 m30 m20 m10 0 1 2 3 4 5 6 7 8 Return Loss(dB) Frequency (GHz) 2.7V 3.3V 5.0V 5.5V 1.2 1.4 1.6 1.8 2.2 2.4 2.6 2.8 VSWR Time (µsec) RFX Term mmm> RFX Active RFX Active mmm> RFX Term

Rev O 03/01/2016 9 High Reliability SP4T RF Switch Typical Operating Conditions (- 4 -) RFX Switching Time [RFX Terminated to RFX Active] RFX IIP3 vs. Selected RFX Port EVKIT Trace and Connector Loss vs. Temperature RFX Switching Time [RFX Active to RFX Terminated] RFX IIP3 vs. Temperature and Voltage m0.5 m0.4 m0.3 m0.2 m0.1 0.1 0.2 0.3 0.4 0.5 Settling to IL State (dB) Time (µsec) 50% CTRL to Insertion Loss 0.5 1 1.5 2 2.5 3 3.5 4 IIP3(dBm) Frequency (GHz) RF1 RF2 RF3 RF4 m1.2 m0.8 m0.6 m0.4 m0.2 0 1 2 3 4 5 6 7 8 Loss (dB) Frequency (GHz) m40C 25C 105C m70 m60 m50 m40 m30 m20 m10 Settling to Isolation (dB) Time (µsec) 50% CTRL to Isolation 0.5 1 1.5 2 2.5 3 3.5 4 IIP3 (dBm) Frequency (GHz) m40C, 2.7V m40C, 3.0V m40C, 3.3V m40C, 5.0V m40C, 5.5V 25C, 2.7V 25C, 3.0V 25C, 3.3V 25C, 5.0V 25C, 5.5V 105C, 2.7V 105C, 3V 105C, 3.3V 105C, 5V 105C, 5.5V

High Reliability SP4T RF Switch 10 Rev O 03/01/2016 PACKAGE D RAWING (4 mm x 4 mm 24Kpin QFN), NBG24 NOTE : THE F2914 USES THE P3 EXPOSED PADDLE DIMENSIONS NOTED BELOW

Rev O 03/01/2016 11 High Reliability SP4T RF Switch LAND PATTERN D IMENSION Land Pattern to Support 2.7 mm x 2.7 mm Exposed Paddle Version (See Version P3 of Package Drawing)

High Reliability SP4T RF Switch 12 Rev O 03/01/2016 PIN D IAGRAM GND VSS EXT GND GND GND GND GND GND VDD GND Control Circuit E.P. RF4 RF3 RF2 GND RF1 GND GND GND GND RFC 50Ω 50Ω 50Ω 50Ω GND PIN D ESCRIPTION Pin Name Function 13, 15, 21, 23, 24 GND Ground these pins as close to the device as pos sible.

2 GND

This pin is internally connected to the exposed paddle. This pin can be left open or grounded. Note: The EVKIT layout has a floating RF trace connected to this pin to make the board compatible with the F2915. 5 RF4 RF4 Port. Matched to 50 ohms. If this pin is not 0V DC, then an external coupling capacitor must be used. 8 RF3 RF3 Port. Matched to 50 ohms. If this pin is not 0V DC, then an external coupling capacitor must be used. 11 RF2 RF2 Port. Matched to 50 ohms. If this pin is not 0V DC, then an external coupling capacitor must be used. 14 RF1 RF1 Port. Matched to 50 ohms. If this pin is not 0V DC, then an external coupling capacitor must be used. 16 VDD Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as possible to pin. 17 V1 Control pin to set switch state. See Table 1 or Table 2. 18 V2 Control pin to set switch state. See Table 1 or Table 2. 19 V3 Control pin to set switch state. See Table 1 or Table 2.

20 VSS EXT

External VSS negative voltage control. Connect to ground to enable on chip negative voltage generator. To bypass and disable on chip generator connect this pin to an external VSS. 22 RFC RF Common Port. Matched to 50 ohms when one of the 4 RF ports is selected. If this pin is not 0V DC, then an external coupling capacitor must be used. 25 — EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple ground vias are also required to achieve the specified RF performance.

Rev O 03/01/2016 13 High Reliability SP4T RF Switch A PPLICATIONS INFORMATION Default Start-up Control pins include no internal pullKdown resistors to logic LOW or pullKup resistors to logic HIGH. Logic Control Three control pins V1, V2, and V3 are used to set the state of the SP4T switch (see Table 1 or Table 2). External Vss The F2914 is designed with an onKchip negative voltage generator. This onKchip generator is enabled by connecting pin 20 of the device to ground. To disable the onKchip generator apply a negative voltage to pin 20 (VSSEXT) of the device within the range stated in the Recommended Operating Conditions Table. Power Supplies A common VDD power supply should be used for all pins requiring DC power. All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1V/20uS. In addition, all control pins should remain at 0 V (+/K0.3 V) while the supply voltage ramps or while it returns to zero. Control Pin Interface If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of each control pin is recommended. This applies to control pins 17, 18, and 19 as shown below.

High Reliability SP4T RF Switch 14 Rev O 03/01/2016 EVKIT PICTURE Top View Bottom View

Rev O 03/01/2016 15 High Reliability SP4T RF Switch EV KIT / A PPLICATIONS CIRCUIT

High Reliability SP4T RF Switch 16 Rev O 03/01/2016 EVK IT BOM Part Reference QTY DESCRIPTION Mfr. Part # Mfr. C1, C3, C5, C7, C8, C9 6 100 pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM 1555C1H101J Murata C2 0 Not Installed (0603) C4 0 Not Installed (0603) C6 1 1000 pF ±5%, 50V, C0G Ceramic Capacitor (0603) GRM1885C1H102J Murata R1, R2, R3 3 0 Ω ±1%, 1/10W, Resistor (0402) ERJ K2GE0R00X Panasonic R4, R5, R6 3 100 kΩ ±1%, 1/10W, Resistor (0402) ERJ K2RKF1003 X Panasonic R7 1 15 kΩ ±1%, 1/10W, Resistor (0402) ERJ K2RKF1502X Panasonic R8 1 22 kΩ ±1%, 1/10W, Resistor (0402) ERJ K2RKF 22 02X Panasonic J1 , J3 KJ8 7 Edge Launch SMA (0.375 inch pitch ground tabs) 142 K0701 K851 Emerson Johnson J9 1 CONN HEADER VERT DBL 10 X 2 POS GOLD 67997 K120HLF FCI U1 1 SP4 T Switch 4 mm x 4 mm QFN24 KEP F2914 NB GK IDT 1 Printed Circuit Board F29XX EVKIT Rev 02.0 IDT TOP M ARKINGS IDTF2914 NBGK Z1528ACL Part Number Date Code [YYWW] (Week 28 of 2015) ASM Test Step Assembler Code

Rev O 03/01/2016 17 High Reliability SP4T RF Switch EV KIT OPERATION External Supply Setup Set up a VDD power supply in the voltage range of 2.7 V to 5.5 V and disable the power supply output. If using the onKchip negative voltage generator install a 2Kpin shunt to short out pins 3 and 4 of J9. If an external negative voltage supply is to be used set the supply voltage within the range of K3.6 V to K3.2 V and disable the negative voltage power supply output. Also, be sure there are no jumper connections on pins 3 and 4 of J9. Logic Control Setup Using the EVKIT to manually set the control logic: On connector J9 connect a 2Kpin shunt from pin 7 (VDD) to pin 8 (VDD_CTRL). This connection provides the VDD voltage supply to the Eval Board logic control pull up network. On connector J9 connect a 2Kpin shunt from pin 9 (LVSEL2) to pin 10 (LVSEL). This connection enables R7 (15 kΩ) and R8 (22 kΩ) to form a voltage divider to set the proper logic control levels to support the full voltage range of VDD. Note that when using the onKboard R7 / R8 voltage divider the current draw from the VDD supply will be higher by approximately VDD / 37 kΩ. Connector J9 has 3 logic input pins: V1 (pin 20), V2 (pin 18), and V3 (pin 16). See Table 1 or Table 2 for Logic Truth Table. With the pullup network enabled (as noted above), these pins open will provide a logic high through pull up resistors R4, R5, and R6. To set a logic low to V1, V2, and V3 connect 2Kpin shunts from pin 16 to pin 15, pin 18 to pin 17 and pin 20 to pin 19 respectively. Using external control logic: Pins 6, 7, 8, 9, and 10 of J9 should have no connection. External logic controls would be applied to J9 pins 16 (V3) , 18 (V2) and 20 (V1). See Table 1 or Table 2 for Logic Truth Table. Turn on Procedure Setup the supplies and Eval Board as noted in the External Supply Setup and Logic Control Setup sections above. Connect the preset disabled VDD power supply to pin 2 (VDD) and pin 1 (GND) of J9. If the external negative voltage source is to be used, connect the disabled supply to pin 4 (VSSEXT) and pin 3 (GND) of J9. If using onKchip negative supply be sure the 2Kpin shunt is installed connecting pin 3 to pin 4. Enable the VDD supply then enable the VSSEXT supply (if used). Set the desired logic setting using V1, V2, and V3 to achieve the desired Table 1 or Table 2 setting. Note that external control logic should not be applied without VDD being applied first. Turn off Procedure If using external control logic for V1, V2, V3 then set to a logic low. Disable any external VSSEXT supply. Disable the VDD supply.

High Reliability SP4T RF Switch 18 Rev O 03/01/2016 REVISION HISTORY SHEET Rev Date Page Description of Change O 2016KMarK01 Production Release

Rev O 03/01/2016 19 High Reliability SP4T RF Switch Corporate Headquarters

6024 Silver Creek Valley Road

San Jose, CA 95138 USA Sales 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.idt.com Tech Support http://www.idt.com/support/technical-support DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or sp ecifications described herein at any time, without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or nonKinfringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. Copyright ©2015. Integrated Device Technology, Inc. All rights reserved.