F2912

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High Reliability SP2T RF Switch

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High Reliability SP2T RF Switch 9 kHz to 9000 MHz F2912, Rev 3, 04/01/2016 1 © 2016 Integrated Device Technology, Inc. GENERAL DESCRIPTION The F2912 is a high reliability, low insertion loss, 50 Ω SP2T absorptive RF switch designed for a multitude of wireless and other RF applications. This device covers a broad frequency range from 9 kHz to 9000 MHz. In addition to providing low insertion loss, the F2912 also delivers excellent linearity and isolation performance while providing a 50  termination to the unused RF input port. The F2912 uses a single positive supply voltage of 3.3 V supporting three states using either 3.3 V or 1.8 V user-selectable control voltage. An added feature includes a Mode CTL pin allowing the user to control the device with either 1-pin or 2-pin control. COMPETITIVE ADVANTAGE The F2912 provides extremely low insertion loss; particularly important for RF receiver front-end use.  Insertion Loss : 0.4 dB @ 1 GHz  IIP3: +66 dBm  RF1 to RF2 Isolation: 74 dB@ 1 GHz  Negative supply voltage not required  Extended temperature -55 °C to +125 °C

APPLICATIONS

 Base Station 2G, 3G, 4G  Portable Wireless  Repeaters and E911 systems  Digital Pre-Distortion  Point to Point Infrastructure  Public Safety Infrastructure  WIMAX Receivers and Transmitters  Military Systems, JTRS radios  RFID handheld and portable readers  Cable Infrastructure  Wireless LAN  Test / ATE Equipment

FEATURES

 Very low insertion loss: 0.4 dB @ 1GHz  High Input IP3: +66 dBm  RF1 to RF2 Isolation: 74 dB @ 1GHz  1-pin or 2-pin device control option  Low DC current; 20 μA using 3.3 V logic  Single positive supply voltage: 3.3 V  3.3 V or 1.8 V user-selectable control logic  Operating temperature -55 °C to +125 °C  4 mm x 4 mm 20 pin TQFN package FUNCTIONAL BLOCK DIAGRAM

ORDERING INFORMATION

50Ω 50Ω 50Ω RF1 RF_COM CTL Pins Logic CTL Mode CTL F2912NCGI8 Green Tape & Reel

High Reliability SP2T RF Switch 2 F2912, Rev 3, 04/01/2016 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Units VCC to GND VCC -0.3 +3.9 V CTL1, CTL2, LogicCTL VCNTL -0.3 Vcc + 0.3 V RF1, RF2, RF_Com VRF -0.3 +0.3 V Maximum Junction Temperature TJmax +140 °C Storage Temperature Range TST -65 +150 °C Lead Temperature (soldering, 10s) TLEAD +260 °C ElectroStatic Discharge – HBM (JEDEC/ESDA JS-001-2012) VESDHBM Class 2 (2000) V ElectroStatic Discharge – CDM (JEDEC 22-C101F) VESDCDM Class IV (1500) V RF Power For Case Temperatures up to +85 °C* RF1, RF2 (RF1 or RF2 is connected to RF_COM, State 3 and 2) +33 dBm RF1, RF2 (RF1 or RF2 is NOT connected to RF_COM, State 1, 2 and 3) +24 dBm RF_COM (RF_COM port is NOT connected to RF1 or RF2, State 1) +24 dBm RF Power For Case Temperatures up to +105 °C* RF1, RF2 (RF1 or RF2 is connected to RF_COM, State 3 and 2) +33 dBm RF1, RF2 (RF1 or RF2 is NOT connected to RF_COM, State 1, 2 and 3) +21 dBm RF_COM (RF_COM port is NOT connected to RF1 or RF2, State 1) +21 dBm RF Power For Case Temperatures up to +120 °C* RF1, RF2 (RF1 or RF2 is connected to RF_COM, State 3 and 2) +27 dBm RF1, RF2 (RF1 or RF2 is NOT connected to RF_COM, State 1, 2 and 3) +18 dBm RF_COM (RF_COM port is NOT connected to RF1 or RF2, State 1) +18 dBm * Note: These Absolute Maximum RF power limits are reduced if the RF frequency is lower than 400 MHz. Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL AND MOISTURE CHARACTERISTICS θJA (Junction – Ambient) 60.0 °C/W θJC (Junction – Case) The Case is defined as the exposed paddle 3.9 °C/W Moisture Sensitivity Rating (Per J-STD-020) MSL 1

F2912, Rev 3, 04/01/2016 3 High Reliability SP2T RF Switch F2912 RECOMMENDED OPERATING CONDITIONS Parameter Symbol Conditions Min Typ Max Units Supply Voltage VCC Using 3.3 V logic (Pin 18 low) 2.7 3.6 V Using 1.8 V logic (Pin 18 high) 3.15 3.45 Operating Temperature Range TCASE Case Temperature -55 +125 OC RF Frequency Range FRF 0.009 9000 MHz RF1 Port Impedance ZRF1 50 Ω RF2 Port Impedance ZRF2 50 RF_COM Port Impedance ZRF_COM 50

High Reliability SP2T RF Switch 4 F2912, Rev 3, 04/01/2016 F2912 SPECIFICATION Typical Application Circuit, VCC = +3.3 V, TC = +25 °C, FRF = 1 GHz, 2 GHz, and or 4 GHz as noted below. Input power = 0 dBm or +13 dBm/tone unless otherwise stated. PCB board trace and connector losses are de-embedded unless otherwise noted. Parameter Symbol Conditions Min Typ Max Units Logic Input High Threshold VIH For all control pins Pin 18 low for 3.3 V logic 0.7 x VCC 3.6 V For all control pins Pin 18 high for 1.8 V logic 1.1 1 2 Logic Input Low Threshold VIL For all control pins Pin 18 low for 3.3 V logic 0.3 x VCC V For all control pins Pin 18 high for 1.8 V logic 0.63 V Logic Current IIH, IIL For all control pins 180 500 nA DC Current ICC Pin 18 low for 3.3 V logic 20 25 µA Pin 18 high for 1.8 V logic 126 153 Insertion Loss RF1/RF2 to RF_COM (State 2 or 3) IL RF = 1.0 GHz 0.4 0.6 dB RF = 2.0 GHz 0.5 0.7 RF = 4.0 GHz 0.6 0.8 RF = 6.0 GHz 0.61 0.92 RF = 8.1 GHz 0.81 1.0 RF = 9.0 GHz 1.00 1.4 Isolation RF1 / RF2 to RF_COM (State 2 or 3) ISO1 RF = 1.0 GHz 58 61.5 dB RF = 2.0 GHz 52 57 RF = 4.0 GHz 50 52 RF = 6.0 GHz 45 53 RF = 8.1 GHz 30 33 RF = 9.0 GHz 26 29 Isolation RF1 to RF2 (State 2 or 3) ISO2 RF = 1.0 GHz 71 74 dB RF = 2.0 GHz 60 62 RF = 4.0 GHz 46 47 RF = 6.0 GHz 36 38 RF = 8.1 GHz 27 31 RF = 9.0 GHz 23 27 Return Loss RF_COM (State 1) RL1 RF = 1.0 GHz 27 dB RF = 2.0 GHz 24 RF = 4.0 GHz 20 RF = 6.0 GHz 12 RF = 8.1 GHz 11 RF = 9.0 GHz 9 Note 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: The input 1 dB compression point is a linearity figure of merit. Refer to Absolute Maximum Ratings section for the maximum RF input power. Note 4: Spurious due to on-chip negative voltage generator. Typical generator fundamental frequency is 2.2 MHz.

F2912, Rev 3, 04/01/2016 5 High Reliability SP2T RF Switch F2912 SPECIFICATION (CONT.) Typical Application Circuit, VCC = +3.3 V, TC = +25 °C, FRF = 1 GHz, 2 GHz, and or 4 GHz as noted below. Input power = 0 dBm or +13 dBm/tone unless otherwise stated. PCB board trace and connector losses are de-embedded unless otherwise noted. Parameter Symbol Conditions Min Typ Max Units Return Loss RF_COM (State 2 or 3) RL2 RF = 1.0 GHz 25 dB RF = 2.0 GHz 23 RF = 4.0 GHz 26 RF = 6.0 GHz 18 RF = 8.1 GHz 20 RF = 9.0 GHz 15 Return Loss RF1, RF2 (State 1) RL3 RF = 1.0 GHz 27 dB RF = 2.0 GHz 27 RF = 4.0 GHz 20 RF = 6.0 GHz 18 RF = 8.1 GHz 14 RF = 9.0 GHz 10 Return Loss RF1, RF2 (State 2 or 3) RL4 RF = 1.0 GHz 26 dB RF = 2.0 GHz 25 RF = 4.0 GHz 21 RF = 6.0 GHz 17 RF = 8.1 GHz 14 RF = 9.0 GHz 10 Input IP2 RF1 / RF2 (State 2 or 3) IIP2 RF = 1.0 GHz 102 dBm RF = 2.0 GHz 110 RF = 3.0 GHz 110 Input IP3 RF1 / RF2 (State 2 or 3) IIP3 RF = 1.0 GHz 66 dBm RF = 2.0 GHz 64 RF = 3.0 GHz 64 Input 1dB compression RF1 / RF2 (State 2 or 3) 3 IP1dB FRF = 2.0 GHz 29 30 dBm Switching Time TSW RF = 1.0 GHz 50% control to 90% RF 1.1 µs RF = 1 GHz 50% control to 10% RF 0.5 Maximum Switching Frequency SWFREQ 25 kHz Maximum video feed-through RF_COM port VIDFT

5 MHz to 1 GHz

Measured with 2.5 ns risetime, 0 to 3.3 V control pulse 5 mVpp Maximum spurious level on any RF port4 SpurMAX RF ports terminated into 50 Ω -145 dBm Note 1: Items in min/max columns in bold italics are Guaranteed by Test. Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization. Note 3: The input 1 dB compression point is a linearity figure of merit. Refer to Absolute Maximum Ratings section for the maximum RF input power. Note 4: Spurious due to on-chip negative voltage generator. Typical generator fundamental frequency is 2.2 MHz.

High Reliability SP2T RF Switch 6 F2912, Rev 3, 04/01/2016 CONTROL MODES The F2912 switch states are designed to be controlled by using either a 2 pin logic control (see Table 1) or a 1 pin logic control (see Table 2). Table 3 describes the settings to enable one or two pin control. The F2912 also has the ability to be controlled by 3 V or 1.8 V control logic based on the setting of Pin 18 (See Table 4). See Pin Compatibility in the Applications Information section for more details. Table 1 - Switch Control Truth Table for 2 pin logic control (ModeCTL = GND) State Control pin input RF1, RF2 Input / Output CTL1 (Pin 17) CTL2 (Pin 16) RF1 to RF Com RF2 to RF Com

1 Low Low OFF OFF

2 Low High OFF ON

3 High Low ON OFF

4 High High N/A N/A

Table 2 – Switch Control Truth Table for 1 pin logic control (ModeCTL = VCC) State Control Pin Input RF1, RF2 Input / Output CTL1 (Pin 17) CTL2 (Pin 16) RF1 to RF Com RF2 to RF Com

2 Don't Care High OFF ON

3 Don't Care Low ON OFF

Table 3 – Mode Control Truth Table to set for 1 or 2 pin logic control ModeCTL (Pin 19) Pin Control Mode GND 2-pin control: CTL1 and CTL2 VCC 1-pin control: CTL2 Notes: 1. When RF1 and RF2 ports are both open (State 1), all 3 RF ports are terminated to an internal 50 Ω termination resistor. 2. When RF1 or RF2 port is open (State 2 or State 3 OFF condition), the open port is connected to an internal 50 Ω termination resistor. 3. When RF1 or RF2 port is closed (State 2 or State 3 ON condition), the closed port is connected to the RF Com port. Table 4 - Logic Control (pin 18) Truth Table LogicCTL (Pin 18) Logic Voltage VCC 1.8 V GND 3.3 V

F2912, Rev 3, 04/01/2016 7 High Reliability SP2T RF Switch TYPICAL OPERATING CONDITIONS (TOC) Unless otherwise noted for the TOC graphs on the following pages, the following conditions apply. 1. EVKit connector and trace losses de-embedded 2. Vcc = 3.3 V 3. TAMB = 25 °C 4. Small signal parameters measured with PIN = 0 dBm. 5. Two tone tests PIN =+13 dBm/tone with 50 MHz tone spacing for FRF > 500 MHz. 6. ZS= ZL = 50 Ω

High Reliability SP2T RF Switch 8 F2912, Rev 3, 04/01/2016 TYPICAL OPERATING CONDITIONS (- 1 -) Insertion Loss vs. Temperature Insertion Loss vs. Voltage Isolation vs. Temperature [RFC  RF1 / RF2] Insertion Loss vs. Temperature Insertion Loss vs. Voltage Isolation vs. Temperature [RFC  RF1 / RF2] -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Insertion Loss (dB) Frequency (Hz) -55 C / +3.3 V / RFC -> RF1 -55 C / +3.3 V / RFC -> RF2 -40 C / +3.3 V / RFC -> RF1 -40 C / +3.3 V / RFC -> RF2 +25 C / +3.3 V / RFC -> RF1 +25 C / +3.3 V / RFC -> RF2 +125 C / +3.3 V / RFC -> RF1 +125 C / +3.3 V / RFC -> RF2 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Insertion Loss (dB) Frequency (Hz) +25 C / +2.7 V / RFC -> RF1 +25 C / +2.7 V / RFC -> RF2 +25 C / +3.0 V / RFC -> RF1 +25 C / +3.0 V / RFC -> RF2 +25 C / +3.3 V / RFC -> RF1 +25 C / +3.3 V / RFC -> RF2 +25 C / +3.6 V / RFC -> RF1 +25 C / +3.6 V / RFC -> RF2 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 Isolation (dB) Frequency (Hz) -55 C / +3.3 V / RF2 Sel -55 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 1 2 3 4 5 6 7 8 9 10 11 Insertion Loss (dB) Frequency (GHz) -55 C / +3.3 V / RFC -> RF1 -55 C / +3.3 V / RFC -> RF2 -40 C / +3.3 V / RFC -> RF1 -40 C / +3.3 V / RFC -> RF2 +25 C / +3.3 V / RFC -> RF1 +25 C / +3.3 V / RFC -> RF2 +125 C / +3.3 V / RFC -> RF1 +125 C / +3.3 V / RFC -> RF2 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 1 2 3 4 5 6 7 8 9 10 11 Insertion Loss (dB) Frequency (GHz) +25 C / +2.7 V / RFC -> RF1 +25 C / +2.7 V / RFC -> RF2 +25 C / +3.0 V / RFC -> RF1 +25 C / +3.0 V / RFC -> RF2 +25 C / +3.3 V / RFC -> RF1 +25 C / +3.3 V / RFC -> RF2 +25 C / +3.6 V / RFC -> RF1 +25 C / +3.6 V / RFC -> RF2 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 2 3 4 5 6 7 8 9 10 11 Isolation (dB) Frequency (GHz) -55 C / +3.3 V / RF2 Sel -55 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel

F2912, Rev 3, 04/01/2016 9 High Reliability SP2T RF Switch TYPICAL OPERATING CONDITIONS (- 2 -) Isolation vs. Voltage [RFC  RF1 / RF2] Isolation vs. Temperature [RF1  RF2] Isolation vs. Voltage [RF1  RF2] Isolation vs. Voltage [RFC  RF1 / RF2] Isolation vs. Temperature [RF1  RF2] Isolation vs. Voltage [RF1  RF2] -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 Isolation (dB) Frequency (Hz) +25 C / +2.7 V / RF2 Sel +25 C / +2.7 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.6 V / RF2 Sel +25 C / +3.6 V / RF1 Sel -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 Isolation (dB) Frequency (Hz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 Isolation (dB) Frequency (Hz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 2 3 4 5 6 7 8 9 10 11 Isolation (dB) Frequency (GHz) +25 C / +2.7 V / RF2 Sel +25 C / +2.7 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.6 V / RF2 Sel +25 C / +3.6 V / RF1 Sel -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 2 3 4 5 6 7 8 9 10 11 Isolation (dB) Frequency (GHz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 1 2 3 4 5 6 7 8 9 10 11 Isolation (dB) Frequency (GHz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel

High Reliability SP2T RF Switch 10 F2912, Rev 3, 04/01/2016 TYPICAL OPERATING CONDITIONS (- 3 -) RF1 Return Loss vs. Temperature RF1 Return Loss vs. Voltage RF2 Return Loss vs. Temperature RF1 Return Loss vs. Temperature RF1 Return Loss vs. Voltage RF2 Return Loss vs. Temperature -40 -35 -30 -25 -20 -15 -10 Match (dB) Frequency (Hz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 Match (dB) Frequency (Hz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 Match (dB) Frequency (Hz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 11 Match (dB) Frequency (GHz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 11 Match (dB) Frequency (GHz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 11 Match (dB) Frequency (GHz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel

F2912, Rev 3, 04/01/2016 11 High Reliability SP2T RF Switch TYPICAL OPERATING CONDITIONS (- 4 -) RF2 Return Loss vs. Voltage RFC Return Loss vs. Temperature RFC Return Loss vs. Voltage RF2 Return Loss vs. Voltage RFC Return Loss vs. Temperature RFC Return Loss vs. Voltage -40 -35 -30 -25 -20 -15 -10 Match (dB) Frequency (Hz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 Match (dB) Frequency (Hz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 Match (dB) Frequency (Hz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 11 Match (dB) Frequency (GHz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 11 Match (dB) Frequency (GHz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel -40 -35 -30 -25 -20 -15 -10 0 1 2 3 4 5 6 7 8 9 10 11 Match (dB) Frequency (GHz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel

High Reliability SP2T RF Switch 12 F2912, Rev 3, 04/01/2016 TYPICAL OPERATING CONDITIONS (- 5 -) Input Power Compression vs. Temperature Input Power Compression vs. Voltage Input IP3 Input Power Compression vs. Temperature Input Power Compression vs. Voltage Input IP3 Power Compression (dBm) Frequency (Hz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel Power Compression (dBm) Frequency (Hz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel Input IP3 (dBm) Frequency (Hz) +25 C / +3.3 V 0 1 2 3 4 5 6 7 8 9 Power Compression (dBm) Frequency (GHz) -55 C / +3.3 V / RF1 Sel -55 C / +3.3 V / RF2 Sel -40 C / +3.3 V / RF1 Sel -40 C / +3.3 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +125 C / +3.3 V / RF1 Sel +125 C / +3.3 V / RF2 Sel 0 1 2 3 4 5 6 7 8 9 Power Compression (dBm) Frequency (GHz) +25 C / +2.7 V / RF1 Sel +25 C / +2.7 V / RF2 Sel +25 C / +3.0 V / RF1 Sel +25 C / +3.0 V / RF2 Sel +25 C / +3.3 V / RF1 Sel +25 C / +3.3 V / RF2 Sel +25 C / +3.6 V / RF1 Sel +25 C / +3.6 V / RF2 Sel 0 1 2 3 4 5 6 7 8 9 Input IP3 (dBm) Frequency (GHz) +25 C / +3.3 V

F2912, Rev 3, 04/01/2016 13 High Reliability SP2T RF Switch TYPICAL OPERATING CONDITIONS (- 6 -) Input IP3 [ 2 GHz] Input IP3 [ 4 GHz] Switching Time [TAMB = 25C, 3.3V] Input IP3 [ 3 GHz] Input IP3 [ 6 GHz] Switching Time [TAMB = -40C, 3.3V] Input IP3 (dBm) Voltage (V) -55 C / RF1 -55 C / RF2 +25 C / RF1 +25 C / RF2 +125 C / RF1 +125 C / RF2 Input IP3 (dBm) Voltage (V) -55 C / RF1 -55 C / RF2 +25 C / RF1 +25 C / RF2 +125 C / RF1 +125 C / RF2 1002 nSec CTL2 RF2 RF1 Input IP3 (dBm) Voltage (V) -55 C / RF1 -55 C / RF2 +25 C / RF1 +25 C / RF2 +125 C / RF1 +125 C / RF2 Input IP3 (dBm) Voltage (V) -55 C / RF1 -55 C / RF2 +25 C / RF1 +25 C / RF2 +125 C / RF1 +125 C / RF2 997 nsec RF2 RF1 CTL2 1050 nSec 1050 nSec

High Reliability SP2T RF Switch 14 F2912, Rev 3, 04/01/2016 TYPICAL OPERATING CONDITIONS HISTOGRAMS [N=4800, TCASE= 25C] (-4-) Insertion Loss [RF = 1 GHz] Insertion Loss [RF = 4 GHz] Isolation [RF = 2 GHz] Insertion Loss [RF = 2 GHz] Isolation [RF = 1 GHz] 10% 15% 20% 25% Percent Insertion Loss [1 GHz] Bin (dB) RFC --> RF1 RFC --> RF2 10% 15% 20% 25% Percent Insertion Loss [4 GHz] Bin (dB) RFC --> RF1 RFC --> RF2 10% 15% 20% 25% Percent RFC to RFx Isolation [2 GHz] Bin (dB) RFC --> RF1 RFC --> RF2 10% 15% 20% 25% Percent Insertion Loss [2 GHz] Bin (dB) RFC --> RF1 RFC --> RF2 10% 15% 20% 25% 30% 35% 40% Percent RFC to RFx Isolation [1 GHz] Bin (dB) RFC --> RF1 RFC --> RF2

F2912, Rev 3, 04/01/2016 15 High Reliability SP2T RF Switch PACKAGE DRAWING (4 mm x 4 mm 20-pin TQFN), NCG20 LAND PATTERN DIMENSION

High Reliability SP2T RF Switch 16 F2912, Rev 3, 04/01/2016 PIN DIAGRAM GND CTL2 1617 CTL1 LogicCTL 1920 VCC GND GND

11 GND

RF_COM GND 6 7 8 9 10 RF2 GND

14 GND

50Ω 50Ω 50Ω Control Circuit ModeCTL E.P. PIN DESCRIPTION PIN NAME FUNCTION 1, 2, 4, 5, 6, 7, 9, 10, 11, 12, 14, 15 GND Ground these pins as close to the device as possible. 3 RF1 RF1 Port. Matched to 50 . If this pin is not 0 V DC, then an external coupling capacitor must be used. 8 RF_COM RF Common Port. Matched to 50 . If this pin is not 0 V DC, then an external coupling capacitor must be used. 13 RF2 RF2 Port. Matched to 50 . If this pin is not 0 V DC, then an external coupling capacitor must be used.

16 CTL2 Control 2 – See Table 1 and Table 2 Switch Control Truth Tables

for proper logic setting.

17 CTL1 Control 1 – See Table 1 and Table 2 Switch Control Truth Tables

for proper logic setting. 18 LogicCTL Logic Control – See Table 4 Logic Control Truth Table. Apply VCC to select 1.8 V logic control or GND for 3.3 V logic control. 19 ModeCTL Mode Control – See Table 3 Mode Control Truth Table. Apply VCC to select 1-pin control or GND for 2-pin control. 20 VCC Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as possible to pin. 21 — EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the specified RF performance.

F2912, Rev 3, 04/01/2016 17 High Reliability SP2T RF Switch EVKIT PICTURE (TOP) GND VCC RF1 RF2 RF_COM

High Reliability SP2T RF Switch 18 F2912, Rev 3, 04/01/2016 EVKIT PICTURE (BOTTOM) RF1RF2 RF_COM

F2912, Rev 3, 04/01/2016 19 High Reliability SP2T RF Switch EVKIT / APPLICATIONS CIRCUIT

High Reliability SP2T RF Switch 20 F2912, Rev 3, 04/01/2016 EVKIT BOM Part Reference QTY DESCRIPTION Mfr. Part # Mfr. C1 1 1000 pF ±5%, 50V, C0G Ceramic Capacitor (0603) GRM1885C1H102J Murata C2 1 0.1 µF ±10%, 16V, X7R Ceramic Capacitor (0402) GRM155R71C104K Murata C3 – C6 4 100 pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H101J Murata R1 – R4 4 100 ohm ±1%, 1/10W, Resistor (0402) ERJ-2RKF1000X Panasonic R5 1 15 kohm ±1%, 1/10W, Resistor (0402) ERJ-2RKF1502X Panasonic R6 1 18 kohm ±1%, 1/10W, Resistor (0402) ERJ-2RKF1802X Panasonic R7 – R10 4 100 kohm ±1%, 1/10W, Resistor (0402) ERJ-2RKF1003X Panasonic J1 – J5 5 SMA Edge Launch (0.375 inch pitch ground tabs) 142-0701-851 Emerson Johnson J7 1 CONN HEADER VERT 7x2 POS GOLD N2514-6002-RB 3M U1 1 SP2T Switch 4 mm x 4 mm QFN20-EP F2912NCGI IDT 1 Printed Circuit Board F2912 EVKIT REV 4.1 IDT TOP MARKINGS IDTF29 12NCGI ZC412AKG Part Number Date Code [YWW] (Week 12 of 2014) Lot Code ASM Test Step Assembler Code

F2912, Rev 3, 04/01/2016 21 High Reliability SP2T RF Switch APPLICATIONS INFORMATION Default Start-up Control pins include no internal pull-down resistors to logic LOW or pull-up resistors to logic HIGH. Upon start-up, all control pins should be set to logic LOW (0) thereby enabling 2 pin switch control, opening both RF1 and RF2 paths, and setting logic control voltage to 3.3 V (see above tables for LOW logic states). Power Supplies A common VCC power supply should be used for all pins requiring DC power. All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1 V / 20 uS. In addition, all control pins should remain at 0 V (+/-0.3 V) while the supply voltage ramps or while it returns to zero. Control Pin Interface If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of each control pin is recommended. This applies to control pins 16, 17, 18, and 19 as shown below. 1617181920 5 11 6 7 8 9 10 1450Ω 50Ω 50Ω Control Circuit CTL2 5Kohm 2pf 5Kohm 2pf CTL1 5Kohm 2pf LogicCTL 5Kohm 2pf ModeCTL Pin Compatibility The F2912 switch is compatible with other supplier parts which only support two wire control and 3 volt logic. Other suppliers’ parts with limited functionality have pins 18 and 19 grounded. Grounding pins 18 and 19 on the F2912 will make it fully compatible with the other products. Per Table 3 when pin 19 is grounded, the F2912 is set for 2-wire control. Per Table 4 when pin 18 is grounded, the F2912 is set for 3.3 volt control logic. JEDEC 3.3 volt logic (JESD8C.01) allows logic high to be as low as 2.7 volts which the F2912 supports. Contact your IDT representative for more information about compatibility with other suppliers’ products.

High Reliability SP2T RF Switch 22 F2912, Rev 3, 04/01/2016 EVKIT OPERATION The F2912 EVkit has a number of control features available. Please refer to the EVkit Application Circuit and EVkit Picture for connections to this part. All bias and logic controls are done using J7 as an interface. See Table 5 for the function of each pin on J7. Table 5: EVkit J7 Interface Table J7 PIN PIN NAME CONNECTIONS 1 VCC Pin to supply VCC from an external power supply. 2 GND Pin to supply GND from an external power supply.

3 ModeCTL

Leave this pin open to select 1-pin control. A pull up resistor on the EVkit provides a logic high. If 2-pin control is desired, ground this pin by using a two pin shunt between this pin and pin 4 (GND). See Tables 1, 2, and 3 for 1-pin and 2-pin control logic. 4 GND Pin available to shunt to pin 3 to provide a logic low.

5 LogicCTL

If using 1.8 V logic for CTL1 and CTL2, leave this pin open. A pullup resistor on the kit provides a logic high. If 3.3 V logic is used then ground this pin by using a two pin shunt between this pin and pin 6 (GND). 6 GND Pin available to shunt to pin 5 to provide a logic low.

7 CTL1

Used to control the switch state when using the 2-pin control method. Leave this pin open to allow the EVkit pullup resistor to provide a logic high. Connect to pin 8 (GND) with a two pin shunt if a logic low is desired. Actual logic levels applied to this pin depend on the setting of LogicCTL pin. This device can be damage if the incorrect logic level is applied to this pin. 8 GND Pin available to shunt to pin 7 to provide a logic low.

9 CTL2

Used to control the switch state when using the 1-pin or 2-pin control method. Leave this pin open to allow the EVkit pullup resistor to provide a logic high. Connect to pin 10 (GND) with a two pin shunt if a logic low is desired. Actual logic levels applied to this pin depend on the setting of LogicCTL pin. This device can be damage if the incorrect logic level is applied to this pin. 10 GND Pin available to shunt to pin 9 to provide a logic low. 11 1.8VSEL If using 3.3 V CTL1 and CTL2 logic, connect this pin to pin 12 (VCC) using a two pin shunt. If using 1.8 V logic then leave this pin open.* 12 VCC Internally connected on PCB to VCC on pin 1. 13 1.8VSEL If using 1.8 V CTL1 and CTL2 logic, connect this pin to pin 14 (1.8VSEL2) using a two pin shunt. If using 3.3 V logic then leave this pin open.* 14 1.8VSEL2 If using 1.8 V CTL1 and CTL2 logic, connect this pin to pin 13 (1.8VSEL) using a two pin shunt. If using 3.3 V logic then leave this pin open.* * Never configure the kit to have two pin shunts for both Pin 11 to Pin 12 and Pin 13 to Pin 14.

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San Jose, CA 95138 USA Sales 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.idt.com Tech Support www.IDT.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or im plied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. Copyright ©2016. Integrated Device Technology, Inc. All rights reserved. F2912, Rev 3, 04/01/2016 23 High Reliability SP2T RF Switch REVISION HISTORY SHEET Rev Date Page Description of Change 0 2014-Aug-19 Initial Release 1 2014-Oct-21 17, 18, 20 Update EVKIT Photo and BOM 2 2015-Sept-4 2, 6, 12, Updated to new datasheet format throughout document. Added recommended PCB land pattern information. Added pin compatible information. 3 2016-Apr-01 Added data for low frequency operation (9 kHz). Added data for higher frequency operation (9 GHz).

Product Information

F2912 specifications and overview.

Summary

High Reliability SP2T RF Switch

Description

High Reliability SP2T RF Switch

Source title F2912 Datasheet(PDF) - Integrated Device Technology

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