F25P03D3 GWSEMI | Alldatasheet

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Technical content

Features

 VDS=-30V, ID=-25A  RDS(ON)=9mΩ@VGS=-10V(Typ.)  -5V Logic Level Contol  100% UIS tested G Schematic diagram Main Applications  Automotive Applications  Hard Switched and High Frequency Circuits  Un-interruptible Power Supply DFN3x3-8L F25P03D3 P-Channel Enhancement MOSFET

Electrical Characteristics (TJ=25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 Volt IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA -1.0 -1.4 -2.0 Volt RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-15A 9 11 mΩ VGS=-4.5V, ID=-15A 11.5 14 mΩ Dynamic Characteristics Ciss Input Capacitance VDS=-15V, VGS=0V , F=1MHz 1632 pF Coss Output Capacitance 227 pF Crss Reverse Transfer Capacitance 178 pF Switching Characteristics td(on) Turn-on Delay Time VDD=-15V, ID=-15A, RGEN=1Ω 12 nS tr Turn-on Rise Time 10 nS td(off) Turn-Off Delay Time 25 nS tf Turn-Off Fall Time 13 nS Qg Total Gate Charge VDS=-15V, ID=-20A, VGS=-10V 46 nC Qgs Gate-Source Charge 4.5 nC Qgd Gate-Drain Charge 11 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage VGS=0V, IS=-15A -0.81 -1.2 V F25P03D3

Typical Electrical and Thermal Characteristics F25P03D3

Typical Electrical and Thermal Characteristics F25P03D3

Plastic surface mounted package; DFN3x3-8 PACKAGE OUTLINE F25P03D3 L