F20P10G GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
- VDS=-100V, ID=-20A
- RDS(ON)=86mΩ@VGS=-10V(Typ.)
- RDS(ON)=90mΩ@VGS=-4.5V(Typ.)
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package Main Applications
- Battery Protection
- Load Switch
- Power Management F20P10G P-Channel Enhancement MOSFET TO-252 Top View G Schematic diagram
Electrical Characteristics (TAmbient=25º C unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0 V, ID=250μA -100 Volt IDSS Zero Gate Voltage Drain Current VDS=-100V, VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA -1.0 -1.8 -2.5 Volt RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-10A 86 103 mΩ VGS=-4.5V, ID=-8A 90 117 mΩ Dynamic Characteristics Ciss Input Capacitance VDD=-25V, VGS=0V , F=1MHz 3700 pF Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 32 pF Switching Characteristics td(on) Turn-on Delay Time VDD=-50V, ID=-15A VGEN=-10V, RGEN=9Ω 6 nS tr Turn-on Rise Time 29 nS td(off) Turn-Off Delay Time 17 nS tf Turn-Off Fall Time 24 nS Qg Total Gate Charge VDS=-50V, ID=-10A, VGS=-10V 72 nC Qgs Gate-Source Charge 8.4 nC Qgd Gate-Drain Charge 17.3 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage(Note 3) VGS=0V, IS=-10A -1.2 V IS Diode Forward Current(Note 2) -19 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Limited by TJmax, not recommended for using above this value 3. Pulse width ≤300μs, duty circle≤2% F20P10G P-Channel Enhancement MOSFET
Typical Electrical Characteristics F20P10G P-Channel Enhancement MOSFET
Typical Electrical Characteristics F20P10G P-Channel Enhancement MOSFET
F20P10G P-Channel Enhancement MOSFET TO-252 PACKAGE OUTLINE