SF20LC30 SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.LtdCopyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONSOUTLINE DIMENSIONS Unit : mm Unit : mm RATINGSRATINGS SHINDENGENSHINDENGEN Case : FTO-220Case : FTO-220 Super Fast Recovery RectifiersSuper Fast Recovery Rectifiers DualDual Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions RatingsUnit Storage TemperatureTstg -55\`150 Operating Junction TemperatureTj 150 Maximum Reverse VoltageVRM 300 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=11220 A Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25180 A Dielectric StrengthVdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torqueF0.3N¥m) 0.5 N¥m Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=10A, Pulse measurement, Rating of per diodeMax.1.3 V Reverse Current IR VR=VRM , Pulse measurement, Rating of per diodeMax.25 ÊA Reverse Recovery TimetrrIF=0.5A,@ IR=1A,@ Rating of per diode Max.30 ns Total Gate Charge CJ f=1MHz, VR=10V,@ Rating of per diode Typ.90 pF Thermal Resistance Æjcjunction to case Max.1.5/W
0.1 SF20LC30 Tc=150°C [MAX] Tc=25°C [MAX] Pulse measurement per diode Tc=150°C [TYP] Tc=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]
T D=tp/T 0 5 10 15 20 25 30 35 SF20LC30 0.3 Forward Power Dissipation Tj = 150°C SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T 0 20 40 60 80 100 120 140 160 SF20LC30 0.3 Derating Curve VR = VRM SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Case Temperature Tc [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 100 150 200 1 10 100 SF20LC30 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied
0.05 0.50.2 20 5052 200 500 2000 5000 Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tc=25°C TYP per diode