F20C05 THINKISEMI | Alldatasheet
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Technical content
Designed for use in switching power supplies. inverters and as free wheeling diodes. T hese state-of-the-art devices have the following features: ＊Glass Passivated chip junctions ＊Low Reverse Leakage Current ＊Fast Switching for High Efficiency ＊150℃ Operating Junction Temperature ＊Low Stored Charge Majority Carrier Conduction ＊Low Forward Voltage , High Current Capability ＊Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O MAXIMUM RATINGS AND Characteristic Symbol F20C05D Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 50 100 150 200 V RMS Reverse Voltage V R(RMS) 35 70 105 140 V Average Rectifier Forward Current Per Leg T C =125℃ Per Total Device I F(AV) A Peak Repetitive Forward Current (Rate V R , Square Wave, 20kHz) I FM 20 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) I FSM 175 A Operating and Storage Junction Temperature Range T J , T stg -65 to +150 ℃ ELECTRIAL CHARACTERISTICS Maximum Instantaneous Forward Voltage ( I F =10 Amp T C = 25℃) V F 1.30 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, T C = 25℃) ( Rated DC Voltage, T C = 125℃) I R 200 uA Reverse Recovery Time ( I F = 0.5 A, I R =1.0 , I rr =0.25 A ) T rr 150 ns Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) C P P F TO-220AB MILLIMETERS DIM MIN MAX A 14.68 15.32 B 9.78 10.42 C 5.02 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 2.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.98 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 F20C05 thru F20C20 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Pb Free Plating Product F20C05 thru F20C20 Switchmode Dual Fast Recovery Power Rectifiers Pb F20C05A F20C05C F20C10CF20C15C F20C20C F20C10A F20C10D F20C15A F20C15D F20C20A F20C20D Characteristic Symbol F20C05D Unit F20C05A F20C05C F20C10CF20C15C F20C20C F20C10A F20C10D F20C15A F20C15D F20C20A F20C20D
FIG-3 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT (Amp.) LEAD TEMPERATURE (℃) FIG-4TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE ( P REVERSE VOLTAGE (Volts.) FIG-5PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT (Amp.) NUMBER OF CYCLES AT 60 Hz FIG-1 TYPICAL FORWARD CHARACTERISITICS AVERAGE FORWARD RECTIFIED CURRENT (Amp.) FORWARD VOLTAGE (Volts) FIG-2 TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT (uA.) PERCENT OF PEAK REVERSE VOLTAGE (﹪) Set time base for 20/50 ns/cm FIG-6 Reverse Recovery Time Characteristic and Test Circuit Diagram F20C05 thru F20C20 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2