F16C20A THINKISEMI | Alldatasheet
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS For capacitive load, derate current by 20%. Single phase, half wave, 60Hz, resistive or inductive load. Rating at 25 o C ambient temperature unless otherwise specified. NOTES : Feature /hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case:TO-220AB Heatsink /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220AB Unit : inch (mm) F16C20A thru F16C60A Pb Free Plating Product F16C20A thru F16C60A
16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode
© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Application Pb -55 to + 150 SYMBOL V RRM V RMS V DC IF (AV) I FSM V F I R Trr C J T J , T STG 140 200 400 280 600 420 600 16.0 10.0 175 0.98 250 2.2 UNIT V V V V A A uA uA o C pF o C nS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Peak Forward Surge Current, 8.3ms single Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @T J =25 o C Typical junction Capacitance (Note 2) Operating Junction and Storage Current T C =100 o C Half sine-wave superimposed on rated load (JEDEC method) @ 8.0 A At Rated DC Blocking Voltage @T J =125 o C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) R JC Temperature Range 150 F16C20C F16C20A F16C20D Positive Negative Doubler Common Cathode Case Case Case Common Anode Suffix "A" Suffix "D"Suffix "C" 200 400 1.3 1.7 /hexstar2 Automotive Environment(Inverters/Converters) /hexstar2 Plating Power Supply,Adaptor,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device System F16C40C F16C40A F16C40D F16C60C F16C60A F16C60D .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Tandem Polarity Rev.04/2014
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 11 0 1 0 0 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100
60 Hz Resistive or
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p F16C40A F16C20A F16C60A © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2Rev.04/2014 F16C20A thru F16C60A