F1653

IDTF1653NLGI IDT | Alldatasheet

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ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 1 RevO, April 2015 IDTF1653NLGI Datasheet GENERAL DESCRIPTION This document describes specifications for the F1653NLGI I/Q Modulator implementing Zero- DistortionTM technology for low power consumption with improved ACLR. This device interfaces directly to a high performance dual DAC. COMPETITIVE ADVANTAGE In typical multi-mode, multi-carrier basestation transmitters the modulator has limited linearity and high power consumption which penalizes the system ACLR and system Power consumptions budgets in a Digital- Pre-Distortion environment. The IDTF1653 is designed to eliminate these penalties by embedding Zero-DistortionTM technology into the device such that very high IP3 and IP2 are achieved with minimal current draw.  Power consumption 4455%%  IM3 Distortion 1144 ddBB PART# MATRIX Part# RF freq Range IP2O Power Cons. IP3O Noise F1650 600 – 2400 +60 dBm 587 mW +36 dBm -158 dBm/Hz FF11665533 660000 –– 22990000 ++6644 ddBBmm 558877 mmWW ++3366 ddBBmm --115599 ddBBmm//HHzz

FEATURES

 Power Gain = 3dB  Direct 100Ω differential drive from Tx DAC  << 559900mmWW PPoowweerr CCoonnssuummppttiioonn  -159 dBm/Hz Output Noise  -161 dBc/Hz Internal LO Path Noise  IP2O = +64 dBm @ 2GHz  IIPP33OO == ++3366 ddBBmm @@ 22GGHHzz  Excellent native LO and image suppression  600 MHz input 1dB Bandwidth  600 MHz to 2900 MHz RF BW  FFaasstt SSeettttlliinngg ffoorr TTDDDD ((<< 220000 nnsseecc))  3.3V Single Power Supply  LO port can be driven single ended or differential  4mm x 4mm, 24-pin TQFN package DEVICE BLOCK DIAGRAM

ORDERING INFORMATION

0.8 mm height package Green Industrial Temp range Tape & Reel Omit IDT prefix RF product Line

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 2 RevO, April 2015 IDTF1653NLGI Datasheet ABSOLUTE MAXIMUM RATINGS VDD to GND -0.3V to +3.6V STBY -0.3V to (VDD + 0.3V) BB_I+, BB_I-, BB_Q+, BB_Q- -0.3V to 1.8V LO_IN -0.3V to 0.3V RF_OUT (VDD-0.35V) to (VDD-0.05V) Continuous Power Dissipation 1.5W θJA (Junction – Ambient) +45°C/W θJC (Junction – Case) The Case is defined as the exposed paddle +2.5°C/W Operating Temperature Range (Case Temperature) TCASE = -40°C to +105°C Maximum Junction Temperature 150°C Storage Temperature Range -65°C to +150°C Lead Temperature (soldering, 10s) +260°C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 3 RevO, April 2015 IDTF1653NLGI Datasheet IDTF1653 RECOMMENDED OPERATION CONDITIONS Parameter Symbol Comment min typ max units Supply Voltage(s) VDD All VDD pins 3.15 3.30 3.45 V Operating Temperature TCASE Case Temperature -40 25 +105 deg C LO Freq Range FLO LO power -3dBm to +5dBm 600 2900 MHz BB Common Mode Voltage VCM  TCASE = -40C to +105C  VDD = 3.3 V  LO level = 0dBm 0.1 0.25 0.8 V BB input voltage compliance range For each BB pin 0 1 Vpeak BB Freq Range FBB  FLO = 1950 MHz, BB_IQ = 200 mVp-p  PRF degrades < 1 dB DC 600 MHz

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 4 RevO, April 2015 IDTF1653NLGI Datasheet IDTF1653 SPECIFICATION See application circuit. Typical values are measured at VDD = +3.3V, FLO = 1950 MHz, PLO = 0 dBm, TCASE= +25°C, STBY = GND, BB_IQ frequency = 49, 50 MHz, BB_I&Q levels = 200 mVp-p each (-13dBm and 14 dB backoff from 1V DAC compliance), I & Q = 0.250V common-mode bias unless otherwise noted. Parameter Symbol Comment min typ max units Logic Input High VIH For STBY Pin 1.07 V Logic Input Low VIL For STBY Pin 0.68 V Logic Current IIH, IIL For STBY Pin -100 +1 μA Supply Current (ON) ISUPP Total VDD 178 1901 mA Supply Current (STBY) ISTBY Total VDD, STBY = VIH 2.8 5 mA LO Power PLO 600MHz to 2900MHz -3 +5 dBm BB Input Resistance (Differential) RBB Freq = 100 MHz 113 Ω LO port Impedance ZLO  Single Ended (RL < -10dB)  Can be driven differentially 50 Ω RF port Impedance ZRF Single Ended (RL < -10dB) 50 Ω Power Gain G 2.0 3.0 4.0 dB Output IP3 @ 850 MHz IP3O1 LO = 800 MHz 37 dBm Output IP3 @ 2.00 GHz IP3O2 LO = 1950 MHz 30 36 Output IP3 @ 2.85 GHz IP3O3 LO = 2800 MHz 31 Output IP2 @ 850 MHz IP2O1 LO = 800 MHz Differential baseband input 65 dBm Output IP2 @ 2.00 GHz IP2O LO = 1950 MHz Differential baseband input 582 64 Output IP2 @ 2.85 GHz IP3O2 LO = 2800 MHz Differential baseband input 63 Turn on time PON STBY = low to 90% final output power 175 nsec Turn off time POFF STBY = high to initial output power -30dB 26 LO (Carrier) Suppression LOsupp Native, Uncorrected FLO = 1950 MHz -39 -30 dBm Sideband (Image) Suppression SS Native, Uncorrected FLO = 1950 MHz Differential baseband input -34 -30 dBc Output P1dB P1dBO Output Compression 15 dBm Output Noise NSD  10 MHz offset from LO  BB I&Q levels = 0 VP-P -157 -159 dBm/Hz LO Path Noise (internal) ΦN_LO +10 MHz offset -161 dBc/Hz SPECIFICATION NOTES: 1 – Items in min/max columns in bold italics are Guaranteed by Test 2 – All other Items in min/max columns are Guaranteed by Design Characterization

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 5 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS GRAPHS Unless otherwise noted, the following conditions apply:  Baseband I&Q levels = 200 mVPP each (-13 dBm / Channel / Tone)  Baseband I&Q tones = 49, 50 MHz  Low Side Injection  TAMB = 25C, VCC = 3.30 V, LO Power = 0 dBm  VCM = 0.250 Volts  Flo = 1.95GHz unless otherwise specified  EVKit RF output Trace and Connector Losses De-Embedded EVkit RF output loss (Trace + Connector) -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 -45degC / 25degC / 85degC / 100degC / RF Frequency (GHz) Output Loss (dB)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 6 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-1-) OIP3 vs. TAMB OIP3 vs. LO level OIP2 vs. VCC OIP3 vs. VCC OIP2 vs. TAMB OIP2 vs. LO level -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Output IP3 (dBm) 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Output IP3 (dBm) 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Output IP2 (dBm) 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Output IP3 (dBm) -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Output IP2 (dBm) 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Output IP2 (dBm)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 7 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-2-) ICC vs. TAMB ICC vs. LO level Power Consumption vs. VCC ICC vs. VCC Power Consumption vs. TAMB Power Consumption vs. LO level 100 140 180 220 260 300 340 -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Total Current (mA) 100 140 180 220 260 300 340 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Total Current (mA) 300 400 500 600 700 800 900 1,000 1,100 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Power Consumption (mW) 100 140 180 220 260 300 340 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Total Current (mA) 300 400 500 600 700 800 900 1,000 1,100 -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Power Consumption (mW) 300 400 500 600 700 800 900 1,000 1,100 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Power Consumption (mW)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 8 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-3-) Gain vs. TAMB Gain vs. LO level RF Output Power vs. VCC Gain vs. VCC RF Output Power vs. TAMB RF Output Power vs. LO level -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Gain (dB) 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Gain (dB) -15 -13 -11 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Output RF Level (dBm) Total Baseband Input Power = -10 dBm = 200 mVPP across 100Ω on I&Q 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Gain (dB) -15 -13 -11 -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Output RF Level (dBm) Total Baseband Input Power = -10 dBm = 200 mVPP across 100Ω on I&Q -15 -13 -11 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Output RF Level (dBm) Total Baseband Input Power = -10 dBm = 200 mVPP across 100Ω on I&Q

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 9 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-4-) Unadjusted LO Suppression vs. TAMB Unadjusted LO Suppression vs. LO level Unadjusted Sideband Suppression vs. VCC Unadjusted LO Suppression vs. VCC Unadjusted Sideband Suppression vs. TAMB Unadjusted Sideband Suppression vs. LO level -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Native Carrier Suppresion (dBm) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Native Carrier Suppresion (dBm) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Native Image Suppresion (dBc) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Native Carrier Suppresion (dBm) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Native Image Suppresion (dBc) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Native Image Suppresion (dBc)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 10 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-5-) Baseband 2nd Harmonic vs. TAMB Baseband 2nd Harmonic vs. LO level Baseband 3rd Harmonic vs. VCC Baseband 2nd Harmonic vs. VCC Baseband 3rd Harmonic vs. TAMB Baseband 3rd Harmonic vs. LO level -90 -80 -70 -60 -50 -40 -30 -20 -10 -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Baseband H2 Rejection (dBc) -90 -80 -70 -60 -50 -40 -30 -20 -10 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Baseband H2 Rejection (dBc) -90 -80 -70 -60 -50 -40 -30 -20 -10 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Baseband H3 Rejection (dBc) -90 -80 -70 -60 -50 -40 -30 -20 -10 25degC / 3.45V / 0dBm 25degC / 3.30V / 0dBm 25degC / 3.15V / 0dBm LO Frequency (GHz) Baseband H2 Rejection (dBc) -90 -80 -70 -60 -50 -40 -30 -20 -10 -45degC / 3.30V / 0dBm 25degC / 3.30V / 0dBm 85degC / 3.30V / 0dBm 100degC / 3.30V / 0dBm LO Frequency (GHz) Baseband H3 Rejection (dBc) -90 -80 -70 -60 -50 -40 -30 -20 -10 25degC / 3.30V / 5dBm 25degC / 3.30V / 0dBm 25degC / 3.30V / -3dBm LO Frequency (GHz) Baseband H3 Rejection (dBc)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 11 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-6-) Output Noise vs. Frequency Input Bandwidth (fixed LO = 2.092 GHz) I&Q Input Parallel Resistance/Capacitance Output Noise vs. POUT [VCC = 3.3V, TAMB = 25C] LO & RF Port Return Loss 1dB Compression -164 -162 -160 -158 -156 -154 -152 -150 -148 -146 LO Frequency (GHz) Output Noise (dBm/Hz) 0 100 200 300 400 500 600 -40degC / 3.30V / 0 dBm 25degC / 3.30V / 0 dBm 100degC / 3.30V / 0 dBm 105degC / 3.30V / 0 dBm Baseband Input Frequency (MHz) Power Gain (dB) 100 110 120 130 140 0 100 200 300 400 500 600 Input Balanced RP (ohms) Baseband Input Frequency (MHz) -40degC / I -40degC / Q 25degC / I 25degC / Q 100degC / I 100degC / Q 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 Input Balanced CP (pF) Baseband Input Frequency (MHz) -40degC / I -40degC / Q 25degC / I 25degC / Q 100degC / I 100degC / Q -162 -161 -160 -159 -158 -157 -156 -155 -154 -22 -18 -14 -10 -6 -2 2 6 Output Power (dBm) Output Noise (dBm/Hz) -35 -30 -25 -20 -15 -10 RF Port LO Port Frequency (GHz) Return Loss (dB) Output P1dB (dBm) LO Frequency (GHz) -3 0 5 -3 0 5 -3 0 5 3.15V 3.30V 3.45V Output P1dB (dBm) -40degC 25degC 105degC LO Frequency = 1.95 GHz LO Level (dBm) VSUPPLY

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 12 RevO, April 2015 IDTF1653NLGI Datasheet TYPICAL OPERATING CONDITIONS (-7-) Turn On Time Polarity: LO = 2.0GHz, BB_I+/- lleeaaddss BB_Q+/- Carrier Suppression Nulling Performance Turn Off Time Polarity: LO = 2.0GHz, BB_I+/- llaaggss BB_Q+/- Image Suppression Nulling Performance 1.95G 2.05G -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V -3 dBm 0 dBm 5 dBm -3 dBm 0 dBm 5 dBm -3 dBm 0 dBm 5 dBm -3 dBm 0 dBm 5 dBm LO Suppression (dBm) LO Frequency / LO Power / VSUPPLY -40degC 25degC 90degC 105degC Nulled 2.05G 2G1.95G -90 -80 -70 -60 -50 -40 -30 -20 -10 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V 3.15V 3.30V 3.45V -3 dBm 0 dBm 5 dBm -3 dBm 0 dBm 5 dBm -3 dBm 0 dBm 5 dBm -3 dBm 0 dBm 5 dBm Sideband Suppression (dBc) LO Frequency / LO Power / VSUPPLY -40degC 25degC 90degC 105degC Nulled Turn off time <30ns Flo=2GHz, 3.3V, 25deg STBY RF signal Turn on time <200ns Flo=2GHz, 3.3V, 25deg STBY RF signal

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 13 RevO, April 2015 IDTF1653NLGI Datasheet GENERIC DAC INTERFACE IOUTxP IOUTxN BBP BBN DAC LCM Low Pass Filter Rint Rdac F1653 0 to 20 mA Rdac Rint Vcm Idc=Ibias+0.5Ifs Ibias+0.5Ifs DC impedance: 50W per side AC impedance: 100W differential 50W50W  LCM DAC: low common mode voltage DAC usually has high output impedance and sourcing current out  LPF: to filter out unwanted harmonics  DC common mode voltage on BBP/BBN Vcm: Vcm=IDC x Rdac//Rdc_IQMOD  Vcm is determined by DAC bias current and IQ Mod input DC impedance

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 14 RevO, April 2015 IDTF1653NLGI Datasheet PACKAGE DRAWING (4X4 24 PIN)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 15 RevO, April 2015 IDTF1653NLGI Datasheet PIN DIAGRAM TOP View (looking through the top of the package) LO- LO+ VDD NC NC BB_I- NCGND RF_OUT GND BB_I+ STBY Exposed Pad GND NC NC BB_Q- NC Package Drawing 4 mm x 4 mm package dimension 2.60 mm x 2.60 mm exposed pad 0.5 mm pitch 24 pins 0.75 mm height 0.25 mm pad width 0.40 mm pad length 87 9 1110 12 20 192123 2224 BB_Q+ NC VDD CO 0.35 mm GNDNC NC NC

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 16 RevO, April 2015 IDTF1653NLGI Datasheet PIN DESCRIPTIONS Pins Name Function 1 STBY STBY Mode. Pull this pin high for Standby Mode. Pull low or ground for Normal Operation. 2, 5, 13, 19 GND Ground these pins. 6, 7, 8, 11, 12, 14, 15, 17, 20, NC IDT recommends grounding these pins. 3, 4 LO+, LO- Local oscillator (LO) 50 ohm differential or 25ohm each pin single-ended input. Pins must be ac-coupled. For 50 ohm single- ended operation, ac-couple USED Pin to 50 ohm termination and ac-couple UNUSED pin to GND. 9, 10 BB_Q-, BB_Q+ Quadrature differential baseband input. Internally matched to 100 ohms. 16 RF_OUT RF output. Must be ac-coupled. 18, 24 VDD Power Supply. Bypass to GND with capacitors as shown in the Typical Application Circuit as close to pin as possible. 21, 22 BB_I+, BB_I- In-Phase differential baseband input. Internally matched to 100 ohms. — EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the specified RF performance.

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 17 RevO, April 2015 IDTF1653NLGI Datasheet EVKIT SCHEMATIC POWER SUPPLIES All supply pins should be bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should have a slew rate smaller than 1V/20uS. In addition, all control pins should remain at 0V (+/-0.3V) while the supply voltage ramps or while it returns to zero. TP10 VCC VDD VCC2 VCC1 VR1 C17 TP8 R6TP2 J7 1 VDD VR3 C11 R11 R14 TP5 VDD VR4 C10 R12 TP6 C14C13 VDD C12 R13 TP7 F1653 STBY GND LO+ LO- GND NC NC NC BB_Q- BB_Q+ NC NC GND NC NC RFOUT NC VDD GND NC PAD BB_I- BB_I+ NC VDD J10 C18 VDD R10 C8 C9 TP4 VDD VDD VR2 TP1 R18 4 3 6 1 C15 C16 VDD TP3 TP9 VCC2 VCC1

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 18 RevO, April 2015 IDTF1653NLGI Datasheet EVKIT BOM APPLYING VCM AT THE BASEBAND INPUTS With L1, L2, L3, and L4 unpopulated, the common mode voltage is set by VR2 and VR4. The voltage set by VR2 has a DC path through the balun transformer T1 to pins BB_I+ and BB_I-, as highlighted. This also applies for VR4, T2, and pins BB_Q+ and BB_Q-. With this configuration, the same voltage will be applied to BB_I+ and BB_I- and the same voltage will be applied to BB_Q+ and BB_Q-. The I and Q common mode voltages may be different from each other to null LO (carrier) leakage. Part Reference QTY DESCRIPTION Mfr. Part # Mfr. C2 1 8pF ±0.5pF, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H8R0D MURATA C4,C6,C8,C10,C17 5 10nF ±10%, 16V, X7R Ceramic Capacitor (0402) GRM155R71C103K MURATA C1 1 39PF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H390J MURATA C7,C9 2 100nF ±10%, 16V, X7R Ceramic Capacitor (0402) GRM155R71C104K MURATA R3,R8,R9,C13-C16,L5 8 0Ω 1/10W Resistor (0402) ERJ-2GE0R00X Panasonic R5,R12 2 24.9 Ω ±1%, 1/4W Resistor (1206) RMCF1206FT24R9 Stackpole Electronics R1 1 47.0KΩ ±1%,1/16W Resistor (0402) RC0402FR-0747KL Yageo VR2,VR4 2 1KΩ ±10%, 1/4W Resistor Trimmer TS63Y102KR10 Vishay/Sfernice J2,J5,J8,J9 4 CONN HEADER VERT SGL 2 X 1 POS GOLD 961102-6404-AR 3M J3,J4,J7,J10 4 Edge Launch SMA (0.250 inch width, round center contact) 142-0711-821 Emerson Johnson J1,J6 2 Edge Launch SMA (0.375 inch width, flat center contact) 142-0701-851 Emerson Johnson T1,T2 2 2:1 Center Tap Balun ADT2-1T+ Mini Circuits U1 1 IQ MOD F1653 IDT

1 Printed Circuit Board F1650 SE EVKIT REV (02) Coastal Circuits

VR1,VR3 DNP C3,C5,C11,C12, C18 DNP L1,L2,L3,L4 DNP R2,R4,R6,R7,R10,R11 DNP R13,R14,R16,R18 DNP

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 19 RevO, April 2015 IDTF1653NLGI Datasheet EVKIT PICTURE: Note: VCC connection on evaluation board is VDD Power Supply on the datasheet. VDD connection on evaluation board is used to set baseband pin common mode (CM) voltage (see schematic)

ZIF/CIF Modulator 600MHz to 2900MHz Zero-DistortionTM Modulator 20 RevO, April 2015 IDTF1653NLGI Datasheet TOP MARKINGS Die Step Lot Code Date Code [YYWW] (Week 42 of 2014) Q42A016Y Part Number ZC1442N F1653GI