F15P03D3 GWSEMI | Alldatasheet

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Features

 VDS=-30V, ID=-15A  RDS(ON)=15mΩ@VGS=-10V(Typ.)  RDS(ON)=20mΩ@VGS=-4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package G Schematic diagram Main Applications  Battery Protection  Load Switch  Power Management F15P03D3 P-Channel Enhancement MOSFET DFN3x3

Electrical Characteristics (TAmbient =25ºC unless noted otherwise) Symbol Parameters Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA -30 Volt IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V -1 μA IGSS Gate-Body Leakage Current VGS=±25V, VDS=0V ±100 nA On Characteristics(Note 3) VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA -1.0 -1.5 -2.5 Volt RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-15A 15 20 mΩ VGS=-4.5V, ID=-10A 20 30 mΩ Dynamic Characteristics(Note 4) Ciss Input Capacitance VDD=-15V, VGS=0V , F=1MHz 1040 pF Coss Output Capacitance 180 pF Crss Reverse Transfer Capacitance 125 pF Switching Characteristics(Note 4) td(on) Turn-on Delay Time VDD=-15V, VGEN=-10V, RGEN=1Ω 10 nS tr Turn-on Rise Time 5.5 nS td(off) Turn-Off Delay Time 26 nS tf Turn-Off Fall Time 9 nS Qg Total Gate Charge VDS=-15V, ID=-10A, VGS=-10V 19 nC Qgs Gate-Source Charge 9.6 nC Qgd Gate-Drain Charge 3.6 nC Drain-Source Diode Characteristics VSD Diode Forward Voltage(Note 3) VGS=0V, IS=-5.0A -0.81 -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Surface mounted on FR4 Board, t≤10 sec 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 4. Guaranteed by design, not subject to production F15P03D3 P-Channel Enhancement MOSFET

F15P03D3 P-Channel Enhancement MOSFET PACKAGE OUTLINE Plastic surface mounted package; DF N3x3