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RF range: 1.8GHz to 5.0GHz 30.3dB typical gain at 3.55GHz 1.6dB NF at 3.55GHz Adjustable OIP3 performance +35.7dBm OIP3 at 3.55GHz and 140mA of bias current +32.2dBm OIP3 at 3.55GHz and 100mA of bias current Adjustable OP1dB performance +23.6dBm OP1dB at 3.55GHz and 140mA of bias current +22.8dBm OP1dB at 3.55GHz and 100mA of bias current 5V power supply Adjustable ICC ranging from 80mA to 160mA 50Ω Single-ended Input and Output Impedances 1.8V Logic Compatible Standby Mode for Power Savings Operating temperature (TEPAD) range: -40°C to +115°C 3 × 3 mm 16-VFQFPN package Block Diagram Figure 1. Block Diagram
Figure 2. Pin Assignments for 3 × 3 × 0.9 mm VFQFPN Package – Top View
Table 1. Pin Descriptions 1, 3, 9, 12 GND Internally grounded. This pin must be grounded with a via as close to the pin as possible. 2 RFIN RF input internally matched to 50Ω. Must use an external DC block. supplying the device with a DC voltage, there is also an RF signal present. 5-8 NC No internal connection. These pins can be left unconnected, or be connected to ground (recommended). Use a via as close to the pin as possible if grounded. 10, 11 RFOUT RF output. Pull up to Vcc through inductor. Must use external DC block. Circuit. Place network as close to the pin as possible. 14 BIAS_2 Connect via inductor to ground. 15 RSET Connect via resistor to ground. Resistor value sets the device into its low or high power mode. this pin (or if the pin is left unconnected), the part is in full operation mode. Pin is 1.8V logic compatible. vias are also required to achieve the noted RF performance.
for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings [a] Exposure to these maximum RF levels can result in significantly higher Icc current draw due to overdriving the amplifier stages.
Table 3. Recommended Operating Conditions
Table 4. Electrical Characteristics that are not shown in bold italics are guaranteed by design characterization. [b] ICC refers to the nominal small signal bias current.
are de-embedded, unless otherwise stated. Table 5. Electrical Characteristics – Band 2p0 (1.8GHz to 2.2GHz) / Low Power Mode
are de-embedded, unless otherwise stated. Table 6. Electrical Characteristics – Band 2p0 (1.8GHz to 2.2GHz) / High Power Mode
are de-embedded, unless otherwise stated. Table 7. Electrical Characteristics – Band 2p5 (2.3GHz to 2.7GHz) / Low Power Mode
are de-embedded, unless otherwise stated. Table 8. Electrical Characteristics – Band 2p5 (2.3GHz to 2.7GHz) / High Power Mode
losses are de-embedded, unless otherwise stated. Table 9. Electrical Characteristics – Band 3p5 (3.3GHz to 3.8GHz) / Low Power Mode are not shown in bold italics are guaranteed by design characterization.
losses are de-embedded, unless otherwise stated. Table 10. Electrical Characteristics – Band 3p5 (3.3GHz to 3.8GHz) / High Power Mode are not shown in bold italics are guaranteed by design characterization.
are de-embedded, unless otherwise stated. Table 11. Electrical Characteristics – Band 4p7 (4.4GHz to 5.0GHz) / Low Power Mode
are de-embedded, unless otherwise stated. Table 12. Electrical Characteristics – Band 4p7 (4.4GHz to 5.0GHz) / High Power Mode
Table 13. Package Thermal Characteristics
The F1478 can be turned off for low current consumption. This is done by applying a logic voltage to pin 16 using Table 14. Table 14. Standby Truth Table Figure 99. Typical Application Circuit in Figure 100. Although these capacitors are sized as 0603 on the EVKit, comparable 0402 devices can be used instead. through the shunt inductor placed at C1.
Figure 102. Electrical Schematic for the Evaluation Board
Table 15. Bill of Material (BOM)
© 2019 Integrated Device Technology, Inc. 41 March 29, 2019 Part Reference QTY Description Manufacturer Part # Manufacturer Band 2p5: 1.2pF ±0.05pF, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H1R2W Band 3p5: 0.3pF ±0.05pF%, 50V, C0G Ceramic Capacitor (0402) GJM1555C1HR30W Band 4p7: 0.3pF ±0.05pF, 50V, C0G Ceramic Capacitor (0402) GJM1555C1HR30W C7 1 10pF ±5%, 50V, C0G Ceramic Capacitor (0402) GRM1555C1H100J Murata C8 1 0.1µF ±5%, 50V, X8L Ceramic Capacitor (0603) GCM188L81H104K Murata C9 1 0.1µF ±5%, 16V, X7R Ceramic Capacitor (0402) GRM155R71C104K Murata C10 1 0.1µF ±5%, 50V, X8L Ceramic Capacitor (0603) GCM188L81H104K Murata L1 1 Band 2p0: 7.5nH ±3%, 550mA Inductor (0402) LQG15HS7N5H02 Murata Band 2p5: 3.0nH ±0.3nH, 800mA Inductor (0402) LQG15HS3N0S02 Band 3p5: 7.5Ω ±5%, 1/10W, Chip Resistor (0402) ERJ-2GEJ7R5X Panasonic Band 4p7: 2.5Ω ±5%, 1/10W, Chip Resistor (0402) ERJ-2GEJ2R4X L2 1 Band 2p0: 27nH ±5%, 350mA Inductor (0402) LQG15HS27NJ02 Murata Band 2p5: 18nH ±5%, 400mA, Inductor (0402) LQG15HS18NJ02 Band 3p5: 10nH ±5%, 500mA, Inductor (0402) LQG15HS10NJ02 Band 4p7: 6.8nH ±5%, 600mA, Inductor (0402) LQG15HS6N8J02 L3 1 Band 2p0: 6.8nH ±5%, 600mA Inductor (0402) LQG15HS6N8J02 Murata Band 2p5: 3.9nH ±0.3nH, 750mA Inductor (0402) LQG15HS3N9S02 Band 3p5: 2.4nH ±0.1nH, 220mA Inductor (0402) LQP15MN2N4B02 Band 4p7: 1.2nH ±0.1nH, 390mA Inductor (0402) LQP15MN1N2B02 R1, R6 - R9 1 0Ω, 1/10W, Resistor (0402) ERJ-2GE0R00X Panasonic R2, R4, R5 0 DNP (Do Not Populate) R3 1 High Power Mode: 10kΩ ±1%, 0.1W, Resistor (0402) ERJ-2RKF1002X Panasonic Low Power Mode: 16kΩ ±1%, 0.1W, Resistor (0402) ERJ-2RKF1602X Panasonic U1 1 F1478 High Gain RF Amplifier F1478NLGA IDT
© 2019 Integrated Device Technology, Inc. 43 March 29, 2019 Power-On Procedure Set up the voltage supplies and Evaluation Board as described in Power Supply Setup 1. Enable the power supply 2. Turn on the power supply Power-Off Procedure 1. Turn off the power supply 2. Disable the power supply
Application Information
The F1478 has been optimized for use in high performance RF applications ranging from 1.8GHz to 5.0GHz. Separate, broadband tuning options are recommended for operating the device within four sub -bands, specifically 1.8GHz to 2.2GHz ( Band 2p0), 2.3GHz to 2.7GHz Performance The high performance is obtained by tuning the F1478 for the input match (RFIN, pin 2), output match (RFOUT, pins 10 and 11), and the interstage VCC (pin 4). RSET (pin 15) is used to set the overall current of the amplifier by setting a resistor to ground. The current will affect all of the amplifier parameters. Bias 2 (pin 13), Bias 1 (pin 14) will mainly affect the intermodulation parameters. When designing a layout keep the components as close to the package as possible. Use the application circuit shown in Figure 99 and the best RF practices to achieve optimum performance. Standby Mode (STBY) The F1478 uses a power down feature for power savings. Connecting pin 16 to a logic HIGH (or leaving the pin u nconnected) enables the device. With a logic LOW applied to pin 16, the amplifier is placed in standby mode. The Standby mode is a high isolation sta te. The level of this isolation is not specified and is dependent on the device. Digital Pin Voltage and Resistance Values Table 16 provides the open-circuit DC voltage referenced to ground and resistance values for each of the control pins listed. Table 16. Digital Pin Voltages and Resistance
16 STBY VCC 100kΩ pull-up resistor to VCC
ramps or while it returns to zero. control line, the component values will need to be adjusted accordingly so as not to load down the control line. Figure 105. Control Pin Interface for Signal Integrity
© 2019 Integrated Device Technology, Inc. 45 March 29, 2019 Package Outline Drawings The package outline drawings are appended at the end of this document and are accessible from the link below. The package inf ormation is the most current data available. www.idt.com/document/psc/16-vfqfpn-package-outline-drawing-30-x-30-x-090-mm-050mm-pitch-160-x-160-mm-epad-nlg16p3
Ordering Information
Orderable Part Number Package MSL Rating Shipping Packaging Temperature F1478NLGA 3 3 0.9 mm 16-pin VFQFPN MSL 3 Tray -40° to +115°C F1478NLGA8 3 3 0.9 mm 16-pin VFQFPN MSL 3 Tape and Reel -40° to +115°C F1478EVB-2p0 Evaluation Board for Band 2p0 – 1.8GHz to 2.2GHz F1478EVB-2p5 Evaluation Board for Band 2p5 – 2.3GHz to 2.7GHz F1478EVB-3p5 Evaluation Board for Band 3p5 – 3.3GHz to 3.9GHz F1478EVB-4p7 Evaluation Board for Band 4p7 – 4.4GHz to 5.0GHz Marking Diagram XXX YWW$$ F1478 Line 1 “XXX” represents the last three digits of the lot number. Line 2 “YWW” has one digit for the year and two digits for week that the part was assembled. “$$” denotes the assembly site. Line 3 “F1478” is the part number.
© 2019 Integrated Device Technology, Inc. 46 March 29, 2019
Revision History
Revision Date Description of Change March 29, 2019 Initial release. Corporate Headquarters
6024 Silver Creek Valley Road
San Jose, CA 95138 www.IDT.com Sales 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com/go/sales Tech Support www.IDT.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as “IDT”) reserve the right to modify the products and/or specifications described herein at an y time, without notice, at IDT's sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of a ny kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability, or non -infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any lice nse under intellectual property rights of IDT or any third parties. IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT l ogo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trade marks used herein are the property of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary . All contents of this document are copyright of Integrated Device Technology, Inc. All rights reserved.
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Package Revision HistoryRev No.Date CreatedDescriptionAug 18, 2020Rev 04Add Chamfer DimensionSept 13, 2018Rev 03Change QFN to VFQFPN © Renesas Electronics Corporation
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